Optical and microstructural characterization of Er3+ doped epitaxial cerium oxide on silicon
Gregory D. Grant,Jiefei Zhang,Ignas Masiulionis,Swarnabha Chattaraj,Kathryn E. Sautter,Sean E. Sullivan,Rishi Chebrolu,Yuzi Liu,Jessica B. Martins,Jens Niklas,Alan M. Dibos,Sumit Kewalramani,John W. Freeland,Jianguo Wen,Oleg G. Poluektov,F. Joseph Heremans,David D. Awschalom,Supratik Guha
DOI: https://doi.org/10.1063/5.0181717
IF: 6.6351
2024-02-01
APL Materials
Abstract:Rare-earth ion dopants in solid-state hosts are ideal candidates for quantum communication technologies, such as quantum memories, due to the intrinsic spin–photon interface of the rare-earth ion combined with the integration methods available in the solid state. Erbium-doped cerium oxide (Er:CeO2) is a particularly promising host material platform for such a quantum memory, as it combines the telecom-wavelength (∼1.5μm) 4f–4f transition of erbium, a predicted long electron spin coherence time when embedded in CeO2, and a small lattice mismatch with silicon. In this work, we report on the epitaxial growth of Er:CeO2 thin films on silicon using molecular beam epitaxy, with controlled erbium concentration between 2 and 130 parts per million (ppm). We carry out a detailed microstructural study to verify the CeO2 host structure and characterize the spin and optical properties of the embedded Er3+ ions as a function of doping density. In as-grown Er:CeO2 in the 2–3 ppm regime, we identify an EPR linewidth of 245(1) MHz, an optical inhomogeneous linewidth of 9.5(2) GHz, an optical excited state lifetime of 3.5(1) ms, and a spectral diffusion-limited homogeneous linewidth as narrow as 4.8(3) MHz. We test the annealing of Er:CeO2 films up to 900 °C, which yields narrowing of the inhomogeneous linewidth by 20% and extension of the excited state lifetime by 40%.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology