Two-dimensional kagome lattice Zn 2 N 3 as an intrinsic magnetic topological insulator for quantum anomalous Hall effect

Mingxing Li,Jiatian Guo,Hongkuang Yuan,Hong Chen
DOI: https://doi.org/10.1016/j.commatsci.2024.112830
IF: 3.572
2024-02-01
Computational Materials Science
Abstract:Magnetic topological insulators (Chern insulators) have been extensively sought since quantum anomalous Hall effect (QAHE) was experimentally verified. Here, we employ first-principles calculations to predict a kagome lattice Zn 2 N 3 monolayer to be an intrinsic magnetic topological insulator which makes QAHE to be realized. The stable Zn 2 N 3 monolayer is shown to exhibit a large band gap of 3.75 eV in a spin channel and a well known Weyl point near the Fermi level with the Fermi velocity of about 4.2 × 10 5 m s−1 in the other spin channel. Further taking into account the spin–orbit coupling (SOC), the system opens a band gap of 4.3 meV at the Fermi level, and the opening of the band gap brings about a surge in the Berry curvature, which transforms the system into a topological non-trivial state. In addition, the Zn 2 N 3 belongs to the ferromagnetic ground state with out of plane magnetization, and the Curie temperature ( T c ) is estimated to be 168 K by Monte Carlo simulation. Moreover, the tight-binding (TB) model is established to verify the topological properties with the calculated Chern number C = 1, anomalous Hall conductance (AHC) σ x y = e 2 / h , and a dissipation-free chiral edge state. Thus, the kagome Zn 2 N 3 monolayer could be a potential candidate for achieving QAHE and low-power consumption spintronic devices.
materials science, multidisciplinary
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