Abstract:Topological antiferromagnetic (AFM) spintronics is an emerging field of research, which involves the topological electronic states coupled to the AFM order parameter known as the N$\acute{\rm e}$el vector. The control of these states is envisioned through manipulation of the N$\acute{\rm e}$el vector by spin-orbit torques driven by electric currents. Here we propose a different approach favorable for low-power AFM spintronics, where the control of the topological states in a two-dimensional material, such as graphene, is performed via the proximity effect by the voltage induced switching of the N$\acute{\rm e}$el vector in an adjacent magnetoelectric AFM insulator, such as chromia. Mediated by the symmetry protected boundary magnetization and the induced Rashba-type spin-orbit coupling at the interface between graphene and chromia, the emergent topological phases in graphene can be controlled by the N$\acute{\rm e}$el vector. Using density functional theory and tight-binding Hamiltonian approaches, we model a graphene/Cr2O3 (0001) interface and demonstrate non-trivial band gap openings in the graphene Dirac bands asymmetric between the K and K' valleys. This gives rise to an unconventional quantum anomalous Hall effect (QAHE) with a quantized value of $2e^2/h$ and an additional step-like feature at a value close to $e^2/2h$, and the emergence of the spin-polarized valley Hall effect (VHE). Furthermore, depending on the N$\acute{\rm e}$el vector orientation, we predict the appearance and transformation of different topological phases in graphene across the $180^{\circ}$ AFM domain wall, involving the QAHE, the valley-polarized QAHE and the quantum VHE (QVHE), and the emergence of the chiral edge state along the domain wall. These topological properties are controlled by voltage through magnetoelectric switching of the AFM insulator with no need for spin-orbit torques.

Electrical Tracking of the Mott Insulating Kitaev Magnet using Graphene/α‐RuCl3 Heterostructure

Electrical Control of Magnetic Proximity Effect in a Graphene/multiferroic Heterostructure

Tunneling spectroscopic signatures of charge doping and associated Mott transition in -RuCl3 in proximity to graphite

Tunneling spectroscopic signatures of charge doping and Mott-phase transition in ${\alpha}$-RuCl${_3}$ in proximity to graphite

Flavoured quantum Hall phase in graphene/CrOCl heterostructures

Gate control of 2D magnetism in tri- and four-layers $\rm CrI_3$/graphene heterostructures

Gate Control of 2D Magnetism in Tri- and Four-Layers CrI_3/graphene Heterostructures

Gate control of 2D magnetism in three- and four-layers CrI3/graphene heterostructures

Magnetoelectric control of topological phases in graphene

Gate-Tunable Proximity Effects in Graphene on Layered Magnetic Insulators

Quantum anomalous Hall effect in metal-bis(dithiolene), magnetic properties, doping and interfacing graphene

Tunable intrinsic magnetic phase transition in pristine single-layer graphene nanoribbons

Room temperature quantum Hall effect in a gated ferroelectric-graphene heterostructure

Signature of gate-tunable magnetism in graphene grafted with Pt-porphyrins

Gate-tunable Linear Magnetoresistance in Molybdenum Disulfide Field-Effect Transistors with Graphene Insertion Layer

Magnetotransport Across the Metal-Graphene Hybrid Interface and Its Modulation by Gate Voltage

Probing Magnetism in Insulating Cr2Ge2Te6 by Induced Anomalous Hall Effect in Pt

Tunable Magneto-Optical Kerr Effect in Gated Monolayer Graphene in Terahertz Region

Large tunable kinetic inductance in a twisted graphene superconductor

Untying the insulating and superconducting orders in magic-angle graphene