Abstract:A unique mixed-dimensional van der Waals heterostructure can be formed by integrating one-dimensional (1D) and two-dimensional (2D) materials. Such a 1D/2D mixed-dimensional heterostructure will not only inherit the unique properties of 2D/2D heterostructures, but also has a variety of stacking configurations, offering a new platform to adjust its structure and properties. The combination of p-type 1D single-walled carbon nanotubes (SWCNTs) and n-type 2D molybdenum disulfide (MoS2) is one such example, possessing tunable properties. In situ chemical vapor deposition (CVD) is one of the most effective methods to construct 1D SWCNT/2D MoS2 mixed-dimensional heterostructures. There are several reports of successfully grown SWCNT/MoS2 heterostructures. The reports indicate that these heterostructures exhibit strong electrical and mechanical couplings between the SWCNTs and MoS2, making it suitable for the construction of high-performance electronic and optoelectronic devices. However, there are still several problems associated with the in situ CVD growth of SWCNT/MoS2 heterostructures. First, the growth mechanism of the 1D SWCNT/2D MoS2 heterostructure is unclear. We still do not know how the existence of small-diameter SWCNTs will affect the nucleation and growth process of MoS2. It is undetermined whether MoS2 flakes will grow above the preexisting SWCNTs or under them. Second, current studies all report the growth of MoS2 on a substrate sparsely covered by SWCNTs, which have a wide chirality distribution. Since the chirality of SWCNTs determines their physical properties and the density of SWCNTs significantly affects its performance in electronic devices, both the low density and wide chirality distribution of SWCNTs reported in these studies impose negative impacts on the interface behavior of SWCNT/MoS2 heterostructures and their performance in devices. Herein, we report the preparation of high-quality 1D SWCNT/2D MoS2 heterostructures by directly growing MoS2 on dense and narrow-chirality distributed SWCNTs on a silicon substrate. To achieve this goal, high-purity semiconducting SWCNTs with narrow chirality distributions were sorted from the raw arc-discharged SWCNTs, and then high-density SWCNT arrays or networks were formed on a silicon substrate by dip-coating. Through in-depth analyses of the surface morphology and structure of the nuclei, we found that MoS2 may prefer to grow under the SWCNTs and will grow much faster in the grooves between the SWCNTs to form a growth front. Therefore, an interesting "absorption-diffusion-absorption" growth mechanism has been proposed to explain the nucleation and growth process of SWCNT/MoS2 heterostructures. In addition, we confirm the presence of strong charge coupling in the mixed-dimensional heterostructure through Raman analysis. Carriers can be quickly transferred through the interface between the SWCNTs and MoS2, paving a way for the future design and fabrication of novel electronic and optoelectronic devices based on 1D/2D heterostructures.

Enhancing optical characteristics of mediator-assisted wafer-scale MoS 2 and WS 2 on h-BN

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

A van der Waals pn heterojunction with organic/inorganic semiconductors

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Two‐Dimensional Layered Heterostructures Synthesized from Core–Shell Nanowires

Morphology Engineering in Monolayer MoS2‐WS2 Lateral Heterostructures

Fabrication and Characterization of MoS2/h-BN and WS2/h-BN Heterostructures

Coupling-Assisted Renormalization of Excitons and Vibrations in Compressed MoSe2–WSe2 Heterostructure

Tuning optical properties of monolayer MoS2 through the 0D/2D interfacial effect with C60 nanoparticles

Synthesis and Spectral Characteristics Investigation of the 2D-2D vdWs Heterostructure Materials

Atomically Resolved Observation of Continuous Interfaces Between an As-Grown MoS2 Monolayer and a WS2/MoS2 Heterobilayer on SiO2

Tuning Interlayer Coupling in Large-Area Heterostructures with CVD-Grown MoS2 and WS2 Monolayers

Facile synthesis of two-dimensional MoS2/WS2 lateral heterostructures with controllable core/shell size ratio by a one-step chemical vapor deposition method

Interface Engineering for Efficient Photocarrier Generation and Transfer in Strongly Coupled Metallic/Semiconducting 1T'/2H MoS2 Heterobilayers.

Enhancing the Carrier Transport in Monolayer MoS2 Through Interlayer Coupling with 2D Covalent Organic Frameworks

Facilitating Uniform Large-Scale MoS2, WS2 Monolayers, and Their Heterostructures Through Van Der Waals Epitaxy

Interface Engineering for Efficient Photocarrier Generation and Transfer in Strongly Coupled Metallic/Semiconducting 1T'/2H MoS 2 Heterobilayers

Direct Growth of 1D SWCNT/2D MoS2 Mixed-Dimensional Heterostructures and Their Charge Transfer Property

Nanoscale optical imaging of multi-junction MoS2-WS2 lateral heterostructure