Abstract:Nanowires, due to their unique properties, are emerging as the building blocks of the next-generation electronics industry and will play a critical role in both low- and high-performance circuits and systems. This work presents the design, optimization, and analysis of a silicon (Si) and gallium-nitride nanowire field-effect transistor (GaN NW FET) to evaluate its performance at the ultra-scaled device dimensions required for GaN NW FETs in the electronics industry in order to increase the packing density and overall performance of the device. The analysis was carried out using self-consistent Poisson and Schrödinger equations based on a non-equilibrium Green function (NEGF) approach using Silvaco ATLAS. A reduction of 84.07% in the 'off' current was observed for the GaN NW FET, as compared to its Si counterparts, which reveals the requirement for a GaN NW FET at extremely scaled dimensions for 'off' state leakage suppression. Optimization of the electrostatic control mechanism, gate oxide, gate oxide thickness (tox), and metal work functions (ms) was performed using quantum simulation models to investigate the influence of these parameters on the device performance. A way of improving the Ion/Ioff ratio of the device has been reported using metal contact length and width variations. A 40% reduction in the subthreshold swing value offers improvements in the electrostatic control Ion/Ioff ratio of ~104, ~105, and 102 due to the respective optimizations of the metal contact length (Lc), metal contact width (Wc), and metal work function (ms) of the GaN NW FET, compared to the Si NW FET, thus making the GaN NW FET an intriguing option for digital electronics applications. A comparison of the semi-classical (Drift Diffusion_Mode Space) and quantum (Non-Equilibrium Green Function_Mode Space) transport models was also carried out to reveal the importance of the accuracy of these models at such low dimensions. This optimization and analysis will help us to further improve the performance of experimental work and will act as a reference for the same. This study reveals the performance advantages of the GaN NW FET over the Si NW FET for transistor applications in the electronics industry and can serve as a reference point for the researchers working in this area. To the best of our knowledge, no such comparison has been reported so far for Si and GaN NW FETs using 3 nm technology.

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Modeling and performance characterization of double-walled carbon nanotube array field-effect transistors

Analytical Model for AlGaN/GaN High Electron Mobility Transistor

A Scalable Multiharmonic Surface-Potential Model of AlGaN/GaN HEMTs

A Novel high-voltage DMG Fe-doped AlGaN/AlN/GaN HEMTs with sheet charge density model

A Physics-Based Compact Direct-Current and Alternating-Current Model for AlGaN/GaN High Electron Mobility Transistors

Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors

Model the AlGaN/GaN high electron mobility transistors

Analytical modeling of 2DEG with 2DHG polarization charge density drain current and small‐signal model of quaternary AlInGaN HEMTs for microwave frequency applications

A Surface Potential Large Signal Model for AlGaN/GaN HEMTs

Design, optimization, and analysis of Si and GaN nanowire FETs for 3 nm technology

Modeling of Novel RF AlGaN/GaN HEMTs with the Structure of N-Si Drain Extension

The Investigation of Negative Capacitance Vertical Nanowire FETs Based on SPICE Model at Device-Circuit Level

Self-consistent numerical model and optimization of two-dimensional electron gases for AlGaN/GaN HEMT

Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates

Impact of Gate Dielectric Geometry on the Nanowire MOSFETs Performance and Scaling

Accurate 2-D analytical model for cylindrical gate-junctionless ferroelectric-nanowire (CG-JFe-NW) MOSFET with scaled channel length.

Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances

2-D Analytical Model for Current–Voltage Characteristics and Transconductance of AlGaN/GaN MODFETs