Abstract:Two-terminal resistive switching devices are commonly plagued with longstanding scientific issues including interdevice variability and sneak current that lead to computational errors and high-power consumption. This necessitates the integration of a separate selector in a one-transistor-one-RRAM (1T-1R) configuration to mitigate crosstalk issue, which compromises circuit footprint. Here, we demonstrate a multi-terminal memtransistor crossbar array with increased parallelism in programming via independent gate control, which allows in situ computation at a dense cell size of 3–4.5 F2 and a minimal sneak current of 0.1 nA. Moreover, a low switching energy of 20 fJ/bit is achieved at a voltage of merely 0.42 V. The architecture is capable of performing multiply-and-accumulate operation, a core computing task for pattern classification. A high MNIST recognition accuracy of 96.87% is simulated owing to the linear synaptic plasticity. Such computing paradigm is deemed revolutionary toward enabling data-centric applications in artificial intelligence and Internet-of-things.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c09441?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c09441</a>.Figures S1–S11: Materials and characterization, device design, experimental details, measurement data, and simulation. Table S1: Average current and standard deviation statistics. Note S1: Description of the compact model (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c09441/suppl_file/nn0c09441_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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