Physical properties of a novel phase of boron nitride and its potential applications

Zhenyang Ma,Jing Zuo,Chunzhi Tang,Peng Wang,Chunlei Shi
DOI: https://doi.org/10.1016/j.matchemphys.2020.123245
IF: 4.778
2020-09-01
Materials Chemistry and Physics
Abstract:<p>A novel phase of boron nitride <em>m</em>-BN is proposed in this work. The elastic anisotropy, structural properties, mechanical properties and electronic properties of <em>m</em>-BN are investigated. First, <em>m</em>-BN is a wide and indirect band-gap semiconductor material, and the Fermi level and band gap are not sensitive to the effect of pressure. The bulk modulus of <em>m</em>-BN is 329 GPa, which is smaller than that of <em>Pbca</em>-BN and <em>c</em>-BN, but the Young's modulus and shear modulus of <em>m</em>-BN are greater than that of <em>Pbca</em>-BN. In addition, <em>m</em>-BN exhibits elastic anisotropy in bulk modulus, shear modulus, and Young's modulus. Almost all the ratios of the maximum and minimum values of Young's modulus and shear modulus for <em>m</em>-BN increase with increasing pressure. In addition, the elastic anisotropy of <em>m</em>-BN in the anisotropy of the bulk modulus along the <strong><em>a</em></strong>-axis <em>A</em><sub><em>Ba</em></sub> and <em>A</em><sub>1</sub> and <em>A</em><sub>3</sub> (shear anisotropic factors) increases with increasing pressure, while the anisotropy of <em>m</em>-BN in the bulk modulus along the <strong><em>a</em></strong>-axis <em>A</em><sub><em>Ba</em></sub> and <em>A</em><sub>2</sub> (shear anisotropic factor) decreases with increasing pressure.</p>
materials science, multidisciplinary
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