Optimizing the π-Bridge of Non-fullerene Acceptors to Suppress Dark Current in NIR Organic Photodetectors
Lin Shao,Yijun Huang,Ling Hong,Zishuo Xu,Xiye Yang,Chunchen Liu,Fei Huang,Yong Cao
DOI: https://doi.org/10.1007/s40242-024-4103-8
IF: 3.1
2024-06-16
Chemical Research in Chinese Universities
Abstract:Recently, the rapid development of non-fullerene acceptors (NFAs) has laid the foundation for performance improvements in near-infrared (NIR) organic photodetectors (OPDs). However, reducing the bandgap of NFAs to achieve strong absorption in the shorter-wave region usually leads to increased dark current density ( J d ) and decreased responsivity ( R ), severely limiting the detectivity ( D *) of NIR-OPDs. To date, it remains challenging to manipulate the J d of NIR-OPDs through rational structure engineering of NFAs. Herein, three NIR-NFAs, namely bis(2-decyltetradecyl)4,4′-(2′,7′-di- tert -butylspiro[cyclopenta[2,1-b:3,4-b′]dithiophene-4,9′-fluorene]-2,6-diyl)bis(6-((( Z )-1-(dicyanomethylene)-5,6-difluoro-3-oxo-1,3-dihydro-2 H -inden-2-ylidene)methyl)thieno[3,4-b]thiophene-2-carboxylate) (TSIC-4F), bis(2-decyltetradecyl)6,6′-(2′,7′-di- tert -butylspiro[cyclopenta[2,1-b:3,4-b′]dithiophene-4,9′-fluorene]-2,6-diyl)bis(4-((( Z )-1-(dicyanomethylene)-5,6-difluoro-3-oxo-1,3-dihydro-2 H -inden-2-ylidene)methyl)thieno[3,4-b]thiophene-2-carboxylate) (STIC-4F), and 2,2′-((2 Z ,2′ Z )-(((2′,7′-di- tert -butylspiro[cyclopenta [2,1-b:3,4-b′]dithiophene-4,9′-fluorene]-2,6-diyl)bis(2,3-bis(5-(2-butyloctyl)thiophen-2-yl)thieno[3,4-b]pyrazine-7,5-diyl))bis(metha-neylylidene))bis(5,6-difluoro-3-oxo-2,3-dihydro-1 H -indene-2,1-diylidene))dimalononitrile (TPIC-4F), were designed using the thieno[3,4-b]thiophene (TT) and thieno[3,4-b]pyrazine (TPy) derivatives as the π -bridge. Owing to the intramolecular S-S and S-N interactions, STIC-4F and TPIC-4F exhibited smaller backbone distortions than TSIC-4F. A significantly red-shifted absorption with a peak at 1015 nm was observed in TPIC-4F film, larger than that ( ca . 960 nm) for TSIC-4F and STIC-4F films. Moreover, OPDs operating in a photovoltaic mode were successfully fabricated, and TPIC-4F-based OPDs achieved the lowest J d of 3.18×10 −8 A/cm 2 at −0.1 V. Impressively, although TPIC-4F-based OPDs exhibited the lowest R , higher shot-noise-limited specific detectivity ( D sh *) in 1000–1200 nm could be achieved due to its lowest J d . This study underscored the effectiveness of optimizing the π-bridge structure of NFAs to suppress J d , ultimately attaining higher D sh * in the NIR region.
chemistry, multidisciplinary