Investigation of Ga–Nb co-doped barium strontium titanate ceramics for DC-bias free dielectrics

Piyush Sapkota,Keito Yagasaki,Ichiro FUJII,Shintaro UENO,Satoshi Wada

DOI: https://doi.org/10.35848/1347-4065/ad690c

IF: 1.5

2024-08-22

Japanese Journal of Applied Physics

Abstract:The Ba0.8Sr0.2Ti1−2xGaxNbxO3 (0 ≤ x ≤ 0.10) ceramics were fabricated and the electrical properties were evaluated regarding DC-bias and temperature characteristics of the dielectric properties. The ceramics with x = 0.10 exhibited a stable dielectric constant with a change of–40% within 25 °C–150 °C. The dielectric loss of all the co-doped ceramics was below 2% within 25 °C–200 °C. The Ba0.8Sr0.2Ti1−2xGaxNbxO3 ceramics showed a higher dielectric constant with a lower DC-bias dependence as compared to previous study on co-doped BaTiO3 ceramics. The Ba0.8Sr0.2Ti0.20Ga0.10Nb0.10O3 ceramics exhibited the best results of DC-bias dependence ≈−24%, dielectric constant at 100 kV cm−1 ≈ 560, and the dielectric constant at 0 kV cm−1 ≈ 735. The better results for the Ga–Nb co-doped BST ceramics might be due to the higher contribution of the ionic polarization in the BST base matrix resulting in a shallower potential energy curve.

physics, applied