Abstract:Using an effective Dirac model, we study the orbital Hall effect (OHE) in bilayers of transition metal dichalcogenides with 2H stacking (2H-TMD). We use first-order perturbation theory in the interlayer coupling of the bilayer system to obtain analytical expressions for the orbital Hall conductivity in the linear response regime. We use two distinct descriptions of the orbital angular momentum (OAM) operator. The first one is the intra-atomic approximation that considers only the intrasite contribution to the OAM [Cysne et al. , Phys. Rev. Lett. 126 , 056601 (2021)]. The second one uses the Berry phase formula of the orbital (valley) magnetic moment to describe the OAM operator [Bhowal and Vignale, Phys. Rev. B 103 , 195309 (2021)]. This approach includes both intersite and intrasite contributions to the OAM. Our results suggest that the two approaches agree qualitatively in describing the OHE in bilayers of 2H-TMDs, although they present some quantitative differences. We also show that interlayer coupling plays an essential role in understanding the OHE in the unbiased bilayer of 2H-TMD. This coupling causes the Bloch states to become bonding (antibonding) combinations of states of individual layers, demanding the consideration of the non-Abelian structure of the orbital magnetic moment to the occurrence of OHE. As we discuss throughout the work, the emerging picture of transport of OAM in the unbiased bilayer of 2H-TMDs based on OHE is very different from the usual picture based on the valley Hall effect, shedding new light on previous experimental results. We also discuss the effect of the inclusion of a gate-voltage bias in the bilayer system. Our work gives support to recent theoretical predictions on OHE in two-dimensional materials. https://doi.org/10.1103/PhysRevB.105.195421 ©2022 American Physical Society

Role of Disorder in the Intrinsic Orbital Hall Effect

Role of Disorder in the Intrinsic Orbital Hall Effect

Extrinsic Orbital Hall Effect: Interplay Between Diffusive and Intrinsic Transport

Dominance of Extrinsic Scattering Mechanisms in the Orbital Hall Effect: Graphene, Transition Metal Dichalcogenides, and Topological Antiferromagnets

Orbital hall effect: from intrinsic mechanism to experimental evidence

Dominance of extrinsic scattering mechanisms in the orbital Hall effect: graphene, transition metal dichalcogenides and topological antiferromagnets

Orbital Hall physics in two-dimensional Dirac materials

Orbital Hall effect in crystals: Interatomic versus intra-atomic contributions

Intrinsic orbital moment and prediction of a large orbital Hall effect in two-dimensional transition metal dichalcogenides

Orbital Origin of the Intrinsic Planar Hall Effect

Reversal of Orbital Hall Conductivity and Emergence of Tunable Topological Quantum States in Orbital Hall Insulator

Orbital Origin of Intrinsic Planar Hall Effect

Topological Orbital Hall Effect

Controllable orbital–angular–momentum Hall effect by engineering intrinsic orbit–orbit interaction

Orbital angular momentum of Bloch electrons: equilibrium formulation, magneto-electric phenomena, and the orbital Hall effect

Orbital Hall effect in bilayer transition metal dichalcogenides: From the intra-atomic approximation to the Bloch states orbital magnetic moment approach

Disorder-induced Nonlinear Hall Effect with Time-Reversal Symmetry

Orbitronics: the Intrinsic Orbital Hall Effect in p-Doped Silicon

Detection of the Orbital Hall Effect by the Orbital-Spin Conversion

Orbital Hall Responses in Disordered Topological Materials

Spin and orbital Hall effect in non-magnetic transition metals: extrinsic vs intrinsic contributions