Orbital Origin of Intrinsic Planar Hall Effect

Hui Wang,Yue-Xin Huang,Huiying Liu,Xiaolong Feng,Jiaojiao Zhu,Weikang Wu,Cong Xiao,Shengyuan A. Yang

DOI: https://doi.org/10.1103/PhysRevLett.132.056301

2024-03-11

Abstract:Recent experiments reported an antisymmetric planar Hall effect, where the Hall current is odd in the in-plane magnetic field and scales linearly with both electric and magnetic fields applied. Existing theories rely exclusively on a spin origin, which requires spin-orbit coupling to take effect. Here, we develop a general theory for the intrinsic planar Hall effect (IPHE), highlighting a previously unknown orbital mechanism and connecting it to a band geometric quantity -- the anomalous orbital polarizability (AOP). Importantly, the orbital mechanism does not request spin-orbit coupling, so sizable IPHE can occur and is dominated by orbital contribution in systems with weak spin-orbit coupling. Combined with first-principles calculations, we demonstrate our theory with quantitative evaluation for bulk materials $\mathrm{TaSb_{2}}$, $\mathrm{NbAs_{2}}$, and $\mathrm{SrAs_{3}}$. We further show that AOP and its associated orbital IPHE can be greatly enhanced at topological band crossings, offering a new way to probe topological materials.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is about the theoretical explanation and mechanism exploration of the Intrinsic Planar Hall Effect (IPHE). Specifically, the paper aims to:

1. **Propose a general theory**: Existing theories mainly rely on spin - orbit coupling (SOC), which limits the understanding of IPHE. The paper proposes a broader theoretical framework that includes not only the spin mechanism but also introduces a new orbital mechanism. This orbital mechanism is independent of SOC and can therefore be significantly present and dominate IPHE in weak - SOC systems.

2. **Reveal new band - geometric quantities**: The paper introduces two new band - geometric quantities - anomalous spin polarizability (ASP) and anomalous orbital polarizability (AOP). These new geometric quantities are closely related to IPHE, and AOP can significantly enhance IPHE in weak - SOC systems.

3. **Verify the theory through first - principles calculations**: To prove the validity of the theory, the authors use the first - principles calculation method to conduct a quantitative evaluation of several specific materials (such as TaSb₂, NbAs₂ and SrAs₃). The results show that in some materials, the orbital contribution can completely dominate IPHE, especially in materials with weaker SOC.

4. **Explore applications in topological materials**: The paper also shows that AOP and its related orbital IPHE can be greatly enhanced at topological band - crossing points, providing a new way to detect topological materials.

### Formula summary

- **IPHE current expression**:
\[
j^{\text{int}}_a=\chi^{\text{int}}_{abc}E_bB_c
\]
where the response tensor is:
\[
\chi^{\text{int}}_{abc}=\int\frac{dk}{(2\pi)^3}f'_0\left[\Theta^S_{abc}(k)+\Theta^O_{abc}(k)\right]
\]
where:
\[
\Theta^i_{abc}(k)=v_aF^i_{cb}-v_bF^i_{ca}+\epsilon_{abd}\Omega_dM^i_c
\]

- **ASP and AOP expressions**:
\[
F^S_{ab}(k)= - 2\operatorname{Re}\sum_{m\neq n}\frac{M^S_{nm,a}A_{mn,b}}{\varepsilon_n-\varepsilon_m}
\]
\[
F^O_{ab}(k)= - 2\operatorname{Re}\sum_{m\neq n}\frac{M^O_{nm,a}A_{mn,b}}{\varepsilon_n-\varepsilon_m-\frac{1}{2}\epsilon_{acd}\partial_cG^d_{nb}}
\]

Through these formulas and theoretical analysis, the paper successfully explains the origin of IPHE and shows its performance in different materials.