Observation of in-plane anomalous Hall effect associated with orbital magnetization

Ayano Nakamura,Shinichi Nishihaya,Hiroaki Ishizuka,Markus Kriener,Yuto Watanabe,Masaki Uchida

2024-05-27

Abstract:For over a century, the Hall effect, a transverse effect under out-of-plane magnetic field or magnetization, has been a cornerstone for magnetotransport studies and applications. Modern theoretical formulation based on the Berry curvature has revealed the potential that even in-plane magnetic field can induce anomalous Hall effect, but its experimental demonstration has remained difficult due to its potentially small magnitude and strict symmetry requirements. Here we report observation of the in-plane anomalous Hall effect by measuring low-carrier density films of magnetic Weyl semimetal EuCd$_2$Sb$_2$. Anomalous Hall resistance exhibits distinct three-fold rotational symmetry for changes in the in-plane field component, and this can be understood in terms of out-of-plane Weyl points splitting or orbital magnetization induced by in-plane field, as also confirmed by model calculation. Our findings demonstrate the importance of in-plane field to control the Hall effect, accelerating materials development and further exploration of various in-plane field induced phenomena.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to observe the Anomalous Hall Effect (AHE) under the in - plane magnetic field condition. Traditionally, the Hall effect refers to the transverse voltage generated under the action of an external magnetic field perpendicular to the direction of the current. However, modern theoretical research shows that the Anomalous Hall Effect may also be generated even under the action of an in - plane magnetic field, but the experimental verification of this phenomenon is very difficult, mainly because its possible signal is very weak and strict symmetry requirements need to be met.

By measuring the magnetic Weyl semimetal EuCd₂Sb₂ thin film with a low carrier density, the paper observed a significant Anomalous Hall Effect under the in - plane magnetic field condition. It was found that this effect exhibits obvious three - fold rotational symmetry, which is related to the change of the in - plane magnetic field component. Through model calculations, the researchers believe that this effect can be attributed to the splitting of Weyl points or the enhancement of orbital magnetization caused by the in - plane magnetic field.

Specifically, the paper has solved the following key problems:
1. **Experimental observation**: The in - plane Anomalous Hall Effect was observed in the experiment for the first time.
2. **Symmetry analysis**: The symmetry requirements of the material were analyzed in detail to ensure that the observed effect was indeed caused by the in - plane magnetic field.
3. **Physical mechanism**: Through theoretical calculations, it was explained how the in - plane magnetic field causes the splitting of Weyl points and orbital magnetization, thus leading to the generation of the Anomalous Hall Effect.

These findings not only verify the theoretical predictions but also provide an experimental basis for further exploring various novel phenomena induced by the in - plane magnetic field.