GaAs Mid-IR Electrically Tunable Metasurfaces

Hyun Uk Chae,Bo Shrewsbury,Ragib Ahsan,Michelle L Povinelli,Rehan Kapadia
DOI: https://doi.org/10.1021/acs.nanolett.3c04687
IF: 10.8
2024-02-14
Nano Letters
Abstract:In this work, we explore III-V based metal-semiconductor-metal structures for tunable metasurfaces. We use an epitaxial transfer technique to transfer a III-V thin film directly on metallic surfaces, realizing III-V metal-semiconductor-metal (MSM) structures without heavily doped semiconductors as substitutes for metal layers. The device platform consists of gold metal layers with a p-i-n GaAs junction. The target resonance wavelength can be tuned by modifying the geometry of the top metal...
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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