Investigations of high-conductivity interfaces of ferroelectric/dielectric heterostructures

A. O. Chibirev,A. V. Leontiev,T. M. Salikhov,M. I. Bannikov,R. F. Mamin
DOI: https://doi.org/10.1080/00150193.2024.2305570
2024-10-23
Ferroelectrics
Abstract:Conductive properties of film ferroelectric/dielectric heterostructures on MgO substrate in the wide temperature range were studied. The conditions influencing the occurrence of highly conductive layer at the interface of the Ba 0.8 Sr 0.2 TiO 3 /LaMnO 3 /Ba 0.8 Sr 0.2 TiO 3 /MgO heterostructure were considered. The effect of visible light irradiation on the electrical resistance of highly conductive layer at the heterointerfaces in Ba 0.8 Sr 0.2 TiO 3 /LaMnO 3 /Ba 0.8 Sr 0.2 TiO 3 /MgO and LaMnO 3 /Bi 4 Ti 3 O 12 /Ba 0.4 Sr 0.6 TiO 3 /MgO was observed. When exposed to light, an immediate increase in the resistance of a heterostructure occurred with full recovery in the dark state. A possible mechanism for this phenomenon was discussed.
materials science, multidisciplinary,physics, condensed matter
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