Abstract:Abstract Understanding the quantum dynamics of spin defects and their coherence properties requires an accurate modeling of spin-spin interaction in solids and molecules, for example by using spin Hamiltonians with parameters obtained from first principles calculations. We present a real-space approach based on density functional theory for the calculation of spin-Hamiltonian parameters, where only selected atoms are treated at the all-electron level, while the rest of the system is described with the pseudopotential approximation. Our approach permits calculations for systems containing more than 1000 atoms, as demonstrated for defects in diamond and silicon carbide. We show that only a small number of atoms surrounding the defect needs to be treated at the all-electron level, in order to obtain an overall all-electron accuracy for hyperfine and zero-field splitting tensors. We also present results for coherence times, computed with the cluster correlation expansion method, highlighting the importance of accurate spin-Hamiltonian parameters for quantitative predictions of spin dynamics.

What problem does this paper attempt to address?

The paper mainly aims to address the following issues: 1. **Development of Efficient Computational Methods**: A new computational framework is proposed, combining All-Electron (AE) and Pseudopotential (PP) methods to accurately calculate spin-spin interaction parameters in solid-state defects. This method allows calculations in large systems containing hundreds or even thousands of atoms. 2. **Accurate Calculation of Spin Hamiltonian Parameters**: Using Density Functional Theory (DFT), parameters in the Spin Hamiltonian, such as electron Zeeman interaction, hyperfine interaction, and zero-field splitting, are calculated. These parameters are crucial for understanding the spin dynamics in systems like quantum dots. 3. **Validation of the Computational Method**: The effectiveness and accuracy of the proposed hybrid AE-PP method are validated through studies on systems such as the Nitrogen-Vacancy (NV) center in diamond and the Divacancy (VV) in silicon carbide. 4. **Impact of System Size on Results**: The influence of different supercell sizes on the computational results is explored, particularly for hyperfine interaction and zero-field splitting. The results show that calculations in larger supercells can better eliminate the effects of defect interactions. 5. **Prediction of Coherence Time**: Using the obtained Spin Hamiltonian parameters and the Cluster Correlation Expansion (CCE) method, the coherence time of spin defects in semiconductors is predicted. This helps in evaluating the performance of qubits in quantum information processing technologies. In summary, this research aims to develop an efficient computational tool for accurately calculating spin-spin interactions in solid-state defects and further exploring the potential application of these defects as qubits in quantum information technology.

Spin–spin interactions in defects in solids from mixed all-electron and pseudopotential first-principles calculations