Eliminating interface shielding effect endowed by piezoelectric polarization in S-scheme heterojunction for high-efficiency H 2 evolution

Yuwen Wang,Haihan Yu,Shanshan Li,Wenwen Ding,Xiaoran Dou,Chaomin Gao,Lina Zhang,Jinghua Yu,Xin Cheng
DOI: https://doi.org/10.1016/j.apsusc.2024.161462
IF: 6.7
2024-10-14
Applied Surface Science
Abstract:Eliminating the interface shielding effect within step-scheme (S-scheme) heterojunctions which can attenuate the separation driving force of built-in electric field plays a vital role in enhancing the photocatalytic performance. Herein, an extra driving force induced by piezoelectric field is introduced to mitigate such predicament in S-scheme, thereby facilitating the charge separation. Specifically, the piezoelectric CuInS 2 -BiFeO 3 S-scheme heterojunction which with powerful piezoelectric field endowed by the piezoelectric BiFeO 3 is constructed via a facile electrostatic self-assembly strategy and served as the touchstone to verify that hypothesis. The direction of built-in field between the heterojunction interface that is orienting from CuInS 2 to BiFeO 3 has been confirmed by in-situ X-ray photoelectron spectroscopy and electron paramagnetic resonance. Furthermore, the obviously piezo-field at the interface of CuInS 2 -BiFeO 3 which can tilt energy band to enhance the built-in field under external force is also revealed by piezoresponse force microscopy. Consequently, benefiting from the highly-efficient charge separation offered by the synergy of piezoelectric field and S-scheme built-in electric field, a remarkably H 2 production rate of 1465.1 μmol/g is achieved under simultaneous visible light and ultrasonic vibration irradiation. This work sheds light on the role of external field in enhancing the efficient separation of carriers in S-scheme heterojunctions.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
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