Abstract:The development of ultralow-power and easy-to-fabricate electronics with potential for large-scale circuit integration (i.e., complementary or complementary-like) is an outstanding challenge for emerging off-the-grid applications, e.g., remote sensing, "place-and-forget", and the Internet of Things. Herein we address this challenge through the development of ambipolar transistors relying on solution-processed polymer-sorted semiconducting carbon nanotube networks (sc-SWCNTNs) operating in the deep-subthreshold regime. Application of self-assembled monolayers at the active channel interface enables the fine-tuning of sc-SWCNTN transistors toward well-balanced ambipolar deep-subthreshold characteristics. The significance of these features is assessed by exploring the applicability of such transistors to complementary-like integrated circuits, with respect to which the impact of the subthreshold slope and flatband voltage on voltage and power requirements is studied experimentally and theoretically. As demonstrated with inverter and NAND gates, the ambipolar deep-subthreshold sc-SWCNTN approach enables digital circuits with complementary-like operation and characteristics including wide noise margins and ultralow operational voltages (≤0.5 V), while exhibiting record-low power consumption (≤1 pW/μm). Among thin-film transistor technologies with minimal material complexity, our approach achieves the lowest energy and power dissipation figures reported to date, which are compatible with and highly attractive for emerging off-the-grid applications.

Redox‐Mediated Single‐Molecule Transistor with A Subthreshold Swing Down To 120 mV Decade−1

Vertical Organic Electrochemical Transistors for Complementary Circuits

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Atomic Threshold-Switching Enabled MoS2 Transistors Towards Ultralow-Power Electronics

Ultra-Steep-Slope High-Gain MoS2 Transistors with Atomic Threshold-Switching Gate

Fully Solution Processed Bottom-Gate Organic Field-Effect Transistor with Steep Subthreshold Swing Approaching the Theoretical Limit

Energy-efficient transistors: suppressing the subthreshold swing below the physical limit

Single‐Molecule Electrochemical Transistors

Molecular Break Junction: A Stage for Redox Transformations

Dramatic Switching Behavior in Suspended MoS2 Field-Effect Transistors

Low Sub-Threshold Swing Realization with Contacts of Graphene/h-Bn/mos2 Heterostructures in MoS2 Transistors

Transistor Subthreshold Swing Lowered by 2-D Heterostructures

MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit

Ultra‐Steep‐Slope High‐Gain MoS <sub>2</sub> Transistors with Atomic Threshold‐Switching Gate

Ambipolar Deep-Subthreshold Printed-Carbon-Nanotube Transistors for Ultralow-Voltage and Ultralow-Power Electronics.

Vertical, electrolyte-gated organic transistors: continuous operation in the MA/cm$^2$ regime and use as low-power artificial synapses

Dual-gated Single-Molecule Field-Effect Transistors Beyond Moore’s Law

Ion-gated Tungsten Oxide Based Electrochemical Transistors with Subthreshold Slopes Approaching the Thermodynamic Limit

Studying Single Molecule Electrochemistry with Scanning Tunneling Microscope Break-Junction Technique

Low-power MoS2 metal–semiconductor field effect transistors (MESFETs) based on standard metal–semiconductor contact

Electrically Driven Nonresonant Single Molecular Switches