High thermoelectric performance of aluminum-doped cuprous selenide thin films with exceptional flexibility for wearable applications

Dong Yang,Dongliang Zhang,Dongwei Ao,Mohammad Nisar,Adil Mansoor,Yuexing Chen,Fu Li,Hongli Ma,Guangxing Liang,Xianghua Zhang,Ping Fan,Zhuanghao Zheng
DOI: https://doi.org/10.1016/j.nanoen.2023.108930
IF: 17.6
2023-09-30
Nano Energy
Abstract:Flexible thin-film generators are a great promising energy source for wearable device applications. In this work, Al-doped Cu 2 Se thin film with highly (0 l 0) preferred orientation was achieved by magnetron co-sputtering deposition. It possessed a high ZT value of 0.76 at 275 °C, and further surface organic component coating treatment resulted in its exceptional flexibility. The Al dopant was proven to be successfully introduced into the lattice of Cu 2 Se samples, which can decrease carrier concentration and result in the enhancement of Seebeck coefficient . Meanwhile, a significant decline in lattice thermal conductivity was achieved after Al doping. The organic component coating can prevent the fracture of inorganic thin films after bending. The resistance difference (∆R/R 0 ) after 1000 cycles of bending was lower than 10%, which is a great improvement compared with that in pristine thin film (over 15%). The thermoelectric device prepared by the Al-doped Cu 2 Se obtained a stable power density of ∼5.7 W m −2 at a temperature difference of 20 °C.
materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
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