Abstract:Due to their huge composition space and superior performance characteristics, high entropy borides have garnered great interest in many fields, particularly where their high-temperature performances at high temperatures are critical. Herein, we first discovered that dense (Ti 1/9 Zr 1/9 Hf 1/9 Nb 1/9 Ta 1/9 V 1/9 Cr 1/9 Mo 1/9 W 1/9 )B 2 (HEB9) ceramics prepared at 1850°C showed an exceptionally low temperature coefficient of electrical resistivity (4.28×10 -4 K -1 ), which is nearly an order of magnitude lower than those of (Ti 1/5 Zr 1/5 Hf 1/5 Nb 1/5 Ta 1/5 )B 2 (HEB5), and previously reported ZrB 2 and ZrB 2 -30vol% SiC ceramics. Their mechanical, thermophysical properties at elevated temperatures were also investigated systematically. Although the thermal conductivity of HEB9 increased with elevated temperatures, it remained at a very low level (∼29 W/(m·K)) at 1273 K, nearly half that of HEB5. Moreover, HEB9 exhibited a geometrically necessary dislocation density over 30 times greater than HEB5, likely contributing to its higher Vickers hardness and unique physical properties. Notably, the flexural strength in HEB9 at 1600°C was even improved to 650.0 ± 86.3 MPa, compared to the value (559.7 ± 36.7 MPa) at room temperature without degradation. which was comparable to that of HEB5, although thermodynamic calculations indicated a lower melting point of HEB9 and grain boundary softening was occurred in HEB9 at high temperature. The excellent mechanical, electrical and thermophysical properties of HEB9 at elevated temperatures make it a competitive candidate for various high-temperature applications.

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