Abstract:The electric-field-induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor 1 – 4 . In this scheme, ‘on’ is the ballistic flow of charge and spin along dissipationless edges of a two-dimensional quantum spin Hall insulator 5 – 9 , and ‘off’ is produced by applying an electric field that converts the exotic insulator to a conventional insulator with no conductive channels. Such a topological transistor is promising for low-energy logic circuits 4 , which would necessitate electric-field-switched materials with conventional and topological bandgaps much greater than the thermal energy at room temperature, substantially greater than proposed so far 6 – 8 . Topological Dirac semimetals are promising systems in which to look for topological field-effect switching, as they lie at the boundary between conventional and topological phases 3 , 10 – 16 . Here we use scanning tunnelling microscopy and spectroscopy and angle-resolved photoelectron spectroscopy to show that mono- and bilayer films of the topological Dirac semimetal 3 , 17 Na 3 Bi are two-dimensional topological insulators with bulk bandgaps greater than 300 millielectronvolts owing to quantum confinement in the absence of electric field. On application of electric field by doping with potassium or by close approach of the scanning tunnelling microscope tip, the Stark effect completely closes the bandgap and re-opens it as a conventional gap of 90 millielectronvolts. The large bandgaps in both the conventional and quantum spin Hall phases, much greater than the thermal energy at room temperature (25 millielectronvolts), suggest that ultrathin Na 3 Bi is suitable for room-temperature topological transistor operation.

Electric Field Induced Topological Phase Transition in Two-Dimensional Few-layer Black Phosphorus

Pressure-Induced Electronic Transition in Black Phosphorus

Magnetic Field-Induced Electronic Phase Transition in the Dirac Semimetal State of Black Phosphorus under Pressure

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Robust And Pristine Topological Dirac Semimetal Phase In Pressured Two-Dimensional Black Phosphorus

Robust and Pristine Top ological Dirac Semimetal Phase in Pressured Two-Dimensional Black Phosphorous

Pressure-induced Lifshitz transition in black phosphorus

Gate tunable quantum oscillations in air-stable and high mobility few-layer phosphorene heterostructures

Quantum Hall Effect in Electron-Doped Black Phosphorus Field-Effect Transistors

Quantum Criticality of Excitonic Mott Metal-Insulator Transitions in Black Phosphorus

Phase Transition and Field Effect Topological Quantum Transistor made of monolayer MoS2

Quantum Hall Effect in Black Phosphorus Two-dimensional Electron Gas

Efficient Electrical Control of Thin-Film Black Phosphorus Bandgap

Topological phase transition in a narrow bandgap semiconductor nanolayer

Electric-field-tuned topological phase transition in ultrathin Na 3 Bi

Topologically Protected Dirac Cones in Compressed Bulk Black Phosphorus

Electric-field-modulated topological phase transition in AlSb/InSe heterobilayers

Tunable topological edge states in black phosphorus-like Bi(110)

Probing The Electronic States And Impurity Effects In Black Phosphorus Vertical Heterostructures

Topological transition in monolayer blue phosphorene with transiton-metal adatom under stain

Direct Observation of the Layer-Dependent Electronic Structure in Phosphorene.