Abstract:Here a pressure‐induced enhancement of TiO2/CsPbBr3‐QD heterojunction interface interaction and improved photoelectrical performance are reported. The pressure‐induced O─Ti─O bond softening and PbBr6 octahedron stiffening at the interface region significantly enhance the interface interactions that are favorable to the carrier transport. The photocurrent is enhanced under compression and can be preserved upon the release of pressure. This is because high pressure‐induced enhanced heterojunction interactions can also be intercepted at ambient pressure. Therefore, pressure engineering can become an effective method to regulate the performance of heterojunction photovoltaic devices. All‐inorganic cesium lead bromide quantum dots (CsPbBr3‐QD) compounds are potential candidates for optoelectronic devices, because of their excellent fluorescence luminescence and thermal stability. However, the many heterojunction interfaces and large band gap induce the low power conversion efficiency in the CsPbBr3‐QD heterojunction, limiting its practical applications. Hereby, in combination with the pressure regulation and TiO2/CsPbBr3‐QD heterojunction, the interface interaction within the heterojunction can be enhanced and the band gap can be narrowed. The pressure‐induced O─Ti─O bond softening and PbBr6 octahedron stiffening at the interface region significantly enhance the interface interactions that are favorable to the carrier transport. Compared with CsPbBr3‐QD, the atomic interaction between Pb and Br of TiO2/CsPbBr3‐QD heterojunction can be dramatically enhanced at high pressures, leading to increased band gap narrowing rate by two times, which is useful to widen the absorption spectrum. The fluorescence intensity increases by two times. Compression increases the photocurrent and maintains it after the pressure is released, which is due to the enhanced interface interaction induced by the high pressure. The findings provide new opportunities to adjust the physical properties of perovskite heterogeneous structures, and have important applications in the field of new‐generation photovoltaic devices.

Improved Fluorescence and Photoelectrical Properties of CsPbBr3 by Constructing Heterojunctions under Pressure

Pressure‐Induced Indirect‐Direct Bandgap Transition of CsPbBr <sub>3</sub> Single Crystal and Its Effect on Photoluminescence Quantum Yield (Adv. Sci. 29/2022)

High-Pressure Single-Crystal Structures of 3D Lead-Halide Hybrid Perovskites and Pressure Effects on their Electronic and Optical Properties

Pressure‐Induced Indirect‐Direct Bandgap Transition of CsPbBr3 Single Crystal and Its Effect on Photoluminescence Quantum Yield

Enhanced Photoluminescence and Photoresponsiveness of Eu 3+ Ions‐Doped CsPbCl 3 Perovskite Quantum Dots under High Pressure

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Ab-initio investigation of the structural, electronic and optical properties of CsPbBr 3 perovskite under pressure using the DFT-1/2 method

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Pressure-Induced Structural and Optical Properties of Inorganic Halide Perovskite CsPbBr3.

Pressure-induced emission of cesium lead halide perovskite nanocrystals

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Pressure-Tailored Band Gap Engineering and Structure Evolution of Cubic Cesium Lead Iodide Perovskite Nanocrystals

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Pressure‐Induced Unusual Transition of Luminescence Mechanics from Self‐Trapped Exciton to Free Exciton Emission in Lead Bromide Perovskitoids

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