Effect of post-annealing on microstructure and electrical properties of BaTiO 3 thick films grown by aerosol deposition (AD)

Anass Chrir,Oscar Rojas,Laurence Boyer,Olivier Durand-Panteix,Pascal Marchet

DOI: https://doi.org/10.1016/j.jeurceramsoc.2024.01.073

IF: 5.7

2024-02-09

Journal of the European Ceramic Society

Abstract:In this work, we successfully deposited highly dense BaTiO 3 thick films at room temperature on kovar® substrates using aerosol deposition method (AD). As-deposited films exhibited non-ferroelectric behavior due to grain size effect. Post-annealing below 800 °C released residual stress without promoting grain growth for both air and argon annealing atmospheres. Hence, it enhanced relative permittivity, electrical resistivity (10 12 Ω.cm) and reduced leakage currents (<1 μA.cm −2 ). Annealing at 800 and 900 °C induced significant grain growth, favoring the recovery of ferroelectric properties. Grain growth was further enhanced for argon-annealed BT films. For annealing temperatures ≥ 800 °C, both air and argon annealing induced a piezoelectric behavior, clearly evidenced by the strain – field (S-E) cycles. The 900 °C argon-annealed film exhibited the highest properties, with a P r of ∼6.6 μC.cm −2 and a maximum strain of 0.04% under 10 kV.mm −1 .

materials science, ceramics