Abstract:An outstanding polarized light detector is prepared by multilayer γ‐InSe. With the intrinsic anisotropy of transition along the armchair and zigzag direction, the InSe photodetector exhibits an anisotropic ratio of photocurrent of 2.7, which enables polarized light imaging and polarization division multiplexing for optical communication. Polarized light detection is consequential for optical communication and polarized light imaging. InSe is considered a promising candidate for narrow‐bandgap photodetector. However, monolayer γ‐InSe is an indirect bandgap semiconductor and is ignored for a long time for polarized light detection. In this work, by virtue of the indirect–direct conversation and the surface‐bound excitons, the intrinsic anisotropy of multilayer γ‐InSe is revealed by the photoluminescence (PL) measurement under polarized light. Due to the anisotropy of surface‐bound exaction and in‐plane exciton, there are significant differences in the photocurrent under irradiation of laser with different polarization angles. The γ‐InSe‐based photodetector exhibits considerable polarization‐dependent photocurrent with an outstanding anisotropic ratio of 2.7. Moreover, the multilayer γ‐InSe photodetector shows high responsivity of 7.47 A W−1 and specific detectivity of 4.56 × 1013 Jones under 785 nm laser. Based on the InSe polarization photodetector, a polarization division multiplexing that can simultaneously process four information tracks and enhance the communication speed by 24 is explored. The multilayer InSe polarization photodetector proposed in this work broadens a new path for polarized light detection, and brings a potential solution to the field of optical communications.

Monolayer InSe photodetector with strong anisotropy and surface-bound excitons.

Phase Identification and Strong Second Harmonic Generation in Pure Ε-Inse and Its Alloys.

Strong Anisotropy of Multilayer γ‐InSe‐Enabled Polarization Division Multiplexing Photodetection

Strong In-Plane Optical and Electrical Anisotropies of Multilayered γ-InSe for High-Responsivity Polarization-Sensitive Photodetectors

Strain-dependent Electronic Structure and Optical Properties of Monolayer Indium Selenide: A Density Functional + Tight-Binding Model + Many-Body Perturbation Theory Study

High-performance polarization-sensitive photodetectors on two-dimensional β -InSe

Electrical and Optical Properties of InSe with Various Interfaces

Enhancement of Electronic and Optoelectronic Performance of the InSe Multilayer by Surface Transfer Engineering

Surface Oxidation Doping to Enhance Photogenerated Carrier Separation Efficiency for Ultrahigh Gain Indium Selenide Photodetector

Hot Carrier and Surface Recombination Dynamics in Layered InSe Crystals

Tunable Electronic Properties of Multilayer InSe by Alloy Engineering for High Performance Self-Powered Photodetector

The optical properties of few-layer InSe

Anisotropic Spin Transport and Strong Visible-Light Absorbance in Few-Layer SnSe and GeSe

Role of Layer Thickness and Field-Effect Mobility on Photoresponsivity of Indium Selenide (InSe) Based Phototransistors

High-performance devices based on InSe-In1-xGaxSe van der Waals heterojunctions.

Enhancement of Photoluminescence and Hole Mobility in 1- to 5-Layer InSe Due to the Top Valence-Band Inversion: Strain Effect.

Strong Linearly Polarized Light Emission by Coupling Out-of-Plane Exciton to Anisotropic Gap Plasmon Nanocavity

High-performance Polarization-Sensitive Photodetector Based on a Few-Layered PdSe2 Nanosheet

Reveal long-lived hot electrons in 2D indium selenide and ferroelectric-regulated carrier dynamics of InSe/α-In2Se3/InSe heterostructure

Self-Driven and Blue-Enhanced Photodetectors Based on Organic/Inorganic Heterojunction of Pentacene and Bi 2 Se 3

Tailoring the Energy Funneling Across the Interface in InSe/MoS2 Heterostructures by Electrostatic Gating and Strain Engineering