Formation of a Boron‐Oxide Termination for the (100) Diamond Surface

Alex K. Schenk,Rebecca Griffin,Anton Tadich,Daniel Roberts,Alastair Stacey
DOI: https://doi.org/10.1002/admi.202400208
IF: 5.4
2024-05-31
Advanced Materials Interfaces
Abstract:A boron‐oxide termination for (100) diamond is formed under ultrahigh vacuum conditions. This is the first demonstration of a new method of introducing a boron‐based species to the diamond lattice. This result has potential for enabling new surface‐based pathways to the fabrication of high quality boron‐doped delta layers and boron‐based material epitaxy on the diamond, benefiting quantum applications of the diamond. A boron‐oxide termination of the diamond (100) surface has been formed by depositing molecular boron oxide B2O3 onto the hydrogen‐terminated (100) diamond surface under ultrahigh vacuum conditions and annealing to 950 °C. The resulting termination is highly oriented and chemically homogeneous, although further optimization is required to increase the surface coverage beyond the 0.4 monolayer coverage achieved here. This work demonstrates the possibility of using molecular deposition under ultrahigh vacuum conditions for complex surface engineering of the diamond surface, and may be a first step in an alternative approach to fabricating boron doped delta layers in diamond.
materials science, multidisciplinary,chemistry
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