Nondestructive testing of bonding defects in multilayered ceramic matrix composites using THz time domain spectroscopy and imaging

Dan-Dan Zhang,Jiao-Jiao Ren,Jian Gu,Li-Juan Li,Ji-Yang Zhang,Wei-Hua Xiong,Yi-Fan Zhong,Tong-Yu Zhou

DOI: https://doi.org/10.1016/j.compstruct.2020.112624

IF: 6.3

2020-11-01

Composite Structures

Abstract:<p>The accurate detection and imaging of small debonded regions in a 3-layer ceramic matrix composite (CMC) with two bonded layers is a challenge within terahertz (THz) nondestructive detection. To solve this problem, an improved imaging method for detecting bonding defects is proposed based on the statistical characteristics of variance and kurtosis to detect defects in the upper/lower adhesive layers in a multilayered CMC. The proposed method can ultimately realize a detection accuracy of 50 and 250 μm for bonding defects in the upper and lower adhesive layers, respectively, and achieve a better imaging result compared with power imaging method. Moreover, there is a corresponding relationship between the statistical characteristic value and the bonding defect size—the larger the statistical characteristic value, the larger the bonding defect size—which can be used as a reference to quantify the defect size.</p>

mechanics,materials science, composites

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the challenge of non - destructive testing of bonding defects in multi - layer ceramic matrix composites (CMC). Specifically, the author focuses on how to accurately detect and image the tiny debonding areas in the three - layer CMC without damaging the material, especially the defects in the upper and lower bonding layers. To achieve this goal, the research proposes an improved imaging method based on the statistical characteristics of variance and kurtosis to improve the detection accuracy of bonding defects of different thicknesses and achieve better imaging results. Through this method, the detection accuracies of 50 μm and 250 μm for the upper and lower bonding defects can be achieved respectively, and the defect size can be quantified by the correspondence between the statistical eigenvalue and the size of the bonding defect.