Abstract:Spintronics are attractive to the utilization in next-generation quantum-computing and memory. Compared with inorganic spintronics, organic spintronics not only controls the spin degree-of-freedom but also possesses advantages such as chemical tailorability, flexibility, and low-cost fabrication process. Besides, the organic spin valve with a sandwich configuration that is composed of two ferromagnetic electrodes and an organic space layer is one of the classical devices in organic spintronics. Greatly enhanced or inversed magnetoresistance (MR) sign appearing in organic spin valve is induced by the unique interfacial effect an organic semiconductor/ferromagnetic interface. The significant enhancement or inversion of MR is later proved to be caused by the spin-dependent hybridization between molecular and ferromagnetic interface, i.e. , the spinterface. The hybridization is ascribed to spin-dependent broadening and shifting of molecular orbitals. The spinterface takes place at one molecular layer when attaching to the surface of ferromagnetic metal. It indicates that the MR response can be modulated artificially in a specific device by converting the nature of spinterface. Despite lots of researches aiming at exploring the mechanism of spinterface, several questions need urgently to be resolved. For instance, the spin polarization, which is difficult to identify and observe with the surface sensitive technique and the inversion or enhancement of MR signal, which is also hard to explain accurately. The solid evidence of spinterface existing in real spintronic device also needs to be further testified. Besides, the precise manipulation of the MR sign by changing the nature of spinterface is quite difficult. According to the above background, this review summarizes the advance in spinterface and prospects future controllable utilization of spinterface. In Section 2, we introduce the basic principle of spintronic device and spinterface. The formation of unique spinterface in organic spin valve is clarified by using the difference in energy level alignment between inorganic and organic materials. Enhancement and inversion of MR sign are related to the broadening and shifting of the molecular level. In Section 3, several examples about identification of spinterface are listed, containing characterization by surface sensitive techniques and identification in real working devices. In Section 4 some methods about the manipulation of spinterface are exhibited, including modulation of ferroelectric organic barrier, interface engineering, regulation of electronic phase separation in ferromagnetic electrodes, etc. Finally, in this review some unresolved questions in spintronics are given, such as multi-functional and room-temperature organic spin valve and improvement of the spin injection efficiency. Spinterface is of great importance for both scientific research and future industrial interest in organic spintronics. The present study paves the way for the further development of novel excellent organic spin valves.

Spinterfaces Manipulate Large Magnetic Field Effects in 3D and Quasi‐2D Organic–Inorganic Hybrid Perovskites

Impact of orbital hybridization on spin-polarized electronic transport through Ni-MAPbI3 interfaces

Electrically Induced Crystal Field Distortion in a Ferroelectric Perovskite Revealed by Electron Paramagnetic Resonance

Giant Magnetoelectric Effect at the Graphone/ferroelectric Interface

The In Situ Optimization of Spinterface in Polymer Spin Valve by Electronic Phase Separated Oxides

Spin Control and Multifunctional Photocurrent Switch in Chiral Hybrid Organic–Inorganic Perovskites

Lateral Electric‐Field‐Controlled Perpendicular Magnetic Anisotropy and Current‐Induced Magnetization Switching in Multiferroic Heterostructures

Intriguing Magnetoelectric Effect in Two-dimensional Ferromagnetic/Perovskite Oxide Ferroelectric Heterostructure

Ferroelectric control of single-molecule magnetism in 2D limit

Magnetic proximity effect on excitonic spin states in Mn-doped layered hybrid perovskites

Control spin–orbit coupling through changing the crystal structure of the metal halide perovskites

Ferroelectric Control of Organic/Ferromagnetic Spinterface.

Low-Voltage Control of (co/pt) X Perpendicular Magnetic Anisotropy Heterostructure for Flexible Spintronics.

Deterministic Switching of Perpendicular Magnetic Anisotropy by Voltage Control of Spin Reorientation Transition in (Co/pt)(3)/pb(mg1/3nb2/3)o-3-pbtio3 Multiferroic Heterostructures

Spin-optoelectronic Devices Based on Hybrid Organic-Inorganic Trihalide Perovskites

Magnetoelectric Effects Via Pentalinear Interactions

Research of spinterface in organic spintronic devices

Interface robust magnetoelectric coupling effect in ferromagnetic/ferroelectric BiFeO3/KNbO3 heterostructure: First-principles calculations

Modulation of spin dynamics in Ni/Pb(Mg1/3Nb2/3)O3-PbTiO3 multiferroic heterostructure

Large Magnetoelectric Effect in Organic Ferroelectric Copolymer-Based Multiferroic Tunnel Junctions

Electric-Field Control of Perpendicularly Magnetized Ferrimagnetic Order and Giant Magnetoresistance in Multiferroic Heterostructures