Abstract:In situ spinterface modulation is achieved in LPCMO/P3HT/Co polymer spin valve with vertical structure through electronic phase separated (EPS) ferromagnetic (FM) electrode. The EPS states inside LPCMO will affect the spin injection efficiency at spinterface and thus change device magnetoresistance (MR), which can be used to create multiple working states in the device. Tailoring the interface between organic semiconductor (OSC) and ferromagnetic (FM) electrodes, that is, the spinterface, offers a promising way to manipulate and optimize the magnetoresistance (MR) ratio of the organic spin valve (OSV) devices. However, the non‐destructive in situ regulation method of spinterface is seldom reported, limiting its theoretical research and further application in organic spintronics. (La2/3Pr1/3)5/8Ca3/8MnO3 (LPCMO), a recently developed FM material, exhibits a strong electronic phase separation (EPS) property, and can be employed as an effective in situ spinterface adjuster. Herein, we fabricated a LPCMO‐based polymer spin valve with a vertical configuration of LPCMO/poly(3‐hexylthiophene‐2,5‐diyl) (P3HT)/Co, and emphasized the important role of LPCMO/P3HT spinterface in MR regulation. A unique competitive spin‐scattering mechanism generated by the EPS characteristics of LPCMO inside the polymer spin valve was discovered by abstracting the anomalous non‐monotonic MR value as a function of pre‐set magnetic field (Bpre) and temperature (T). Particularly, a record‐high MR ratio of 93% was achieved in polymer spin valves under optimal conditions. These findings highlight the importance of interdisciplinary research between organic spintronics and EPS oxides and offer a novel scenario for multi‐level storage via spinterface manipulation.

Ferroelectric Control of Organic/Ferromagnetic Spinterface.

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A brief review of ferroelectric control of magnetoresistance in organic spin valves

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Ferroelectric control of the conduction at the LaAlO₃/SrTiO₃ heterointerface.

Electrical switching of spin-polarized current in multiferroic tunneling junctions

Active control of magnetoresistance of organic spin valves using ferroelectricity

Electric‐Field Control of Propagating Spin Waves by Ferroelectric Domain‐Wall Motion in a Multiferroic Heterostructure

Computational study on ferroelectric control over spin polarization in the bipolar magnetic semiconductor

Interface Control Of Bulk Ferroelectric Polarization

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Interfacial Charge-Mediated Non-Volatile Magnetoelectric Coupling in Co0.3Fe0.7/Ba0.6Sr0.4TiO3/Nb:SrTiO3 Multiferroic Heterostructures