Intraband transitions at a CsPbBr3/GaAs heterointerface in a two-step photon upconversion solar cell

Hambalee Mahamu,Shigeo Asahi,Takashi Kita

DOI: https://doi.org/10.1038/s41598-024-78257-x

IF: 4.6

2024-11-08

Scientific Reports

Abstract:Two-step photon upconversion solar cells (TPU-SCs) based on III–V semiconductors can achieve enhanced sub-bandgap photon absorption because of intraband transitions at the heterointerface. From a technological aspect, the question arose whether similar intraband transitions can be realized by using perovskite/III–V semiconductor heterointerfaces. In this article, we demonstrate a TPU-SC based on a CsPbBr 3 /GaAs heterointerface. Such a solar cell can ideally achieve an energy conversion efficiency of 48.5% under 1-sun illumination. This is 2.1% higher than the theoretical efficiency of an Al 0.3 Ga 0.7 As/GaAs-based TPU-SC. Experimental results of the CsPbBr 3 /GaAs-based TPU-SC show that both the short-circuit current J SC and the open-circuit voltage V OC increase with additional illumination of sub-bandgap photons. We analyze the excitation power dependence of J SC for different excitation conditions to discuss the mechanisms behind the enhancement. In addition, the observed voltage-boost clarifies that the J SC enhancement is caused by an adiabatic optical process at the CsPbBr 3 /GaAs heterointerface, where sub-bandgap photons efficiently pump the electrons accumulated at the heterointerface to the conduction band of CsPbBr 3 . Besides the exceptional optoelectronic properties of CsPbBr 3 and GaAs, the availability of a CsPbBr 3 /GaAs heterointerface for two-step photon upconversion paves the way for the development of high-efficiency perovskite/III–V semiconductor-based single-junction solar cells.

multidisciplinary sciences