Strain engineering of quasi-1D layered TiS 3 nanosheets toward giant anisotropic Raman and piezoresistance responses

Jing-Kai Qin,Hai-Lin Sun,Tong Su,Weiwei Zhao,Liang Zhen,Yang Chai,Cheng-Yan Xu
DOI: https://doi.org/10.1063/5.0069569
IF: 4
2021-11-15
Applied Physics Letters
Abstract:Quasi-one-dimensional layered TiS3 nanosheets possess highly anisotropic physical properties. Herein, we reported the anisotropic strain response of Raman and the piezoresistance effect in layered TiS3 nanosheets. An attractive Grüneisen parameter ( γ m) of 5.82 was achieved for A g III mode in the b-axis strained TiS3 nanosheet, while a negligible value of γ m was obtained when the strain is applied along the a-axis direction. We also revealed the opposite piezoresistive effect with strains applied along the two principal axes, demonstrating a gauge factor ratio of approximately −1:3.2. The giant anisotropy is attributed to the strain modulated bandgap, which was further confirmed by density functional theory calculations.
physics, applied
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