Low-noise X-ray PIN photodiodes made of perovskite single crystals by solution-processed dopant incorporated epitaxial growth

Xin Wang,Yubing Xu,Yuzhu Pan,Yuwei Li,Ji Xu,Jing Chen,Jun Wu,Qing Li,Xiaobing Zhang,Zhiwei Zhao,Chi Li,Elias E. Elemike,Damian C. Onwudiwe,Javed Akram,Wei Lei
DOI: https://doi.org/10.1016/j.nanoen.2021.106311
IF: 17.6
2021-11-01
Nano Energy
Abstract:<p>X-ray photodiodes made of metal halide perovskites (MHPs) which directly convert X-ray photons into electron-hole pairs have shown advantages in low-cost and high X-ray detection sensitivity. However, lattice-mismatched blocking layers deposited by spin-coating or evaporation cannot fully limit the dark current and noise current under large reverse bias. In this work, Solution-processed dopant incorporated epitaxial growth is employed to form sufficient blocking barriers through epitaxially growing lattice-matched n-type MHPs (bismuth-doped) and p-type MHPs (silver-doped) on opposite faces of intrinsic CH<sub>3</sub>NH<sub>3</sub>PbBr<sub>2.5</sub>Cl<sub>0.5</sub> MHP single crystals. Through energy structure design, electron/hole blocking layers can form sufficient charges barriers, the X-ray PDs exhibit a low leakage dark current density of ~ 11 nA cm<sup>−2</sup> under large reverse electrical field (over 500 V cm<sup>−1</sup>) and noise current of 47 fAHz<sup>−0.5</sup> (1 mm<sup>2</sup>, over 500 V cm<sup>−1</sup>). The large external electrical field enables a state-of-art response speed (fall) of 750 ns, large X-ray detection sensitivity of <span class="math"><math>36.0μCmGy−1cm−2</math></span> and the lowest detectable dose rate of 16 nGys<sup>−1</sup>(40 kVp). This work will motivate new strategies to fabricate high-performance devices based on perovskites using solution-processed methods. These founding also explore a new generation of low dose and high dynamic X-ray detectors based on MHPs.</p>
materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
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