Abstract:Because the single-layer CrI3 is a half semiconductor with indirect band gap and magnetic anisotropy, it has received much attention in the spintronic, magneto-electronic and magnetic storage applications. However, the knowledge of the dependence of carrier mobility and optical property on strain is still rather limited. The uniaxial and biaxial strain dependence of electronic, transport, optical and magnetic properties of single-layer CrI3 are systematically investigated by using first-principles calculations, and the results are compared with experimental results. The electronic structures under different strains are first calculated by using the accurate HSE06 functional, then the carrier mobility is estimated by the deformation potential theory and the dielectric function is obtained to estimate the optical absorption especially in the visible light range. Finally, the magnetic anisotropy energy used to estimate the magneto-electronic properties is studied by the Perdew-Bueke-Ernzerhof functional including the spin-orbit coupling. It is found that the ferromagnetic CrI3 is an indirect and half semiconductor with band gap 2.024 eV,\begin{document}$ \Delta {\text{CBM}} $\end{document}= 1.592 eV, \begin{document}$ \Delta {\text{VBM}} $\end{document}= 0.238 eV and can be driven into AF-Néel antiferromagnetic phase by applying –6% to –8% (compressive) biaxial stain, exhibiting excellent agreement with the results from the literature. It is found that of single-layer CrI3 has very low carrier mobility with a value within 10 cm2·V–1·s–1 due to the large effective mass and small in-plane stiffness can be remarkably increased by increasing biaxial compression strain attributed to the reduced effective mass. A high electron mobility 174 cm2·V–1·s–1 is obtained in the zigzag direction by applying a –8% biaxial strain reaching the level of monolayer MoS2. The calculated imaginary component of dielectric function along the x (y) direction having two peaks (I, II) in the visible light range is obviously different from that along the z direction, indicating that the single-layer CrI3 has optical anisotropy, demonstrating the good agreement with results from the literature. It is found that the imaginary part of dielectric function shows that an obvious redshift and peak (I, II) values strongly increase with the increase of compressive strain (biaxial), showing good agreement with the calculated electronic structures and indicating that monolayer CrI3 possesses high optical adsorption of visible light under a compressive biaxial strain. Furthermore, it is found that the magnetic anisotropy energy of monolayer CrI3 mainly stemming from the orbital magnetic moment of Cr ions remarkably increases from 0.7365 to 1.08 meV/Cr with g compressive strain increasing. These results indicate that the optoelectronic property of single-layer CrI3 can be greatly improved by applying biaxial compressive strain and the single-layer CrI3 is a promising material for applications in microelectronic, optoelectronic and magnetic storage.

Effect of compressive strain on electronic and optical properties of Cr-doped monolayer WS2

Correlatively Dependent Lattice and Electronic Structural Evolutions in Compressed Monolayer Tungsten Disulfide

Strain Affected Electronic Properties of Bilayer Tungsten Disulfide

Strain Relaxation of Monolayer WS2 on Plastic Substrate

Increasing Interlayer Coupling Prevented the Deformation in Compressed Multilayer WSe2

Strain-induced Direct–indirect Bandgap Transition and Phonon Modulation in Monolayer WS2

Strong substrate strain effects in multilayered WS2 revealed by high-pressure optical measurements

Electronic and optical properties of doped monolayer MoS 2 under shear deformation

Electronic structure and magnetism manipulation of non-metal-doped monolayer chromium disulfide under strain

Strain-tunable magnetic and electronic properties of monolayer CrI 3 .

Electronic and optical properties of strain-regulated O-doped monolayer MoS2

Effect of Mechanical Strain on the Optical Properties of Nodal‐Line Semimetal ZrSiS

Photoelectric properties of monolayer 1T-CrS2 modified by doping non-metal atoms under strains

Biaxial strain tuned upconversion photoluminescence of monolayer WS2

Strain Engineering in Monolayer WS2 and WS2 Nanocomposites

Strain Effects on Electronic States and Lattice Vibration of Monolayer MoS2

Functions of tensile and compressive strain on electronic and optical properties of B-doped monolayer arsenene

Using strain to alter the energy bands of the monolayer MoSe2: A systematic study covering both tensile and compressive states

Dielectric Functions and Critical Points of Crystalline WS2 Ultrathin Films with Tunable Thickness.

Electronic and optical properties of Cr / Cl co-doped in single-layer MoS 2 : A first principles study

First-principles Study of Strain-Tunable Charge Carrier Transport Properties and Optical Properties of CrI3 Monolayer