Abstract:Ultra-thin flexible photovoltaic materials for solar cells, like transition metal di-chalcogenides (TMDCs), hold significant promise due to their advantageous properties in photon absorption and electronic transport, being composed of atomically thin 2D layered semiconductor materials. An essential 2D-layered substance, tungsten Disulfide (WS2), classified as a TMDC, has garnered substantial attention due to its notable chemical and physical characteristics. This work presents a novel method for getting good photovoltaic results using WS2 solar cells. The suggested configuration "Al/FTO/SnS2/WS2/CuO/Ni" comprises two absorber layers, which involves incorporating CuO as a supplementary absorber layer and SnS2 as the buffer layer. Several metals with varying work functions were investigated one at a time, therefore, Al and Ni were chosen for the front as well as back contact in order to produce a low resistance metal-semiconductor (M-S) interface. Additionally, aluminum (Al) and nickel (Ni), are commonly used due to their well-understood properties such as conductivity and thermal stability. Subsequently, an analysis was conducted to determine the effects of important influencing factors, such as operating temperature, layer thickness, defects density, and doping density of the absorber and buffer layers. The power conversion efficiency (PCE) was achieved approximately 30%, accompanied by an open circuit voltage (VOC) of 1.02 V, a short circuit current (JSC) of 34.35 mA/cm2, and a fill factor (FF) of 87.27%. This improvement was achieved by utilizing an Al/FTO/SnS2/WS2/CuO/Ni heterostructure. In comparison, the reference cell without CuO (single absorber) had a PCE of 21.74%, VOC of 0.88 V, JSC of 28.6 mA/cm2, and FF of 86.23%. The results obtained from an extensive numerical analysis and demonstrate the immense potential of the SnS2/WS2/CuO heterostructure, indicating a promising direction for the manufacturing of photovoltaic and photonic devices based on WS2-TMDCs. This study provides a systematic roadmap for the fabrication process as well as realization of low-cost high efficiency solar cell.

Toward Mass Production of Transition Metal Dichalcogenide Solar Cells: Scalable Growth of Photovoltaic-Grade Multilayer WSe 2 by Tungsten Selenization

Toward Mass-Production of Transition Metal Dichalcogenide Solar Cells: Scalable Growth of Photovoltaic-Grade Multilayer WSe2 by Tungsten Selenization

High-Specific-Power Flexible Transition Metal Dichalcogenide Solar Cells

Efficiency Limit of Transition Metal Dichalcogenide Solar Cells

Toward high-efficiency solution-processed tandem solar cells

Preparation of Single-Layer MoS(2x)Se2(1-x) and Mo(x)W(1-x)S2 Nanosheets with High-Concentration Metallic 1T Phase.

A Simple Method to Produce an Aluminum Oxide-Passivated Tungsten Diselenide/n-Type Si Heterojunction Solar Cell with High Power Conversion Efficiency

Composition-Tunable Transition Metal Dichalcogenide Nanosheets via a Scalable, Solution-Processable Method

Design and optimization of WS2 based high performance double absorber solar cell

Spray-Coated Transition Metal Dichalcogenides as Hole Transport Layers in Inverted NFA-Based Organic Photovoltaics with Enhanced Stability under Solar and Artificial Light

Modularized batch production of 12-inch transition metal dichalcogenides by local element supply

Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors

Controllable structure-engineered janus and alloy polymorphic monolayer transition metal dichalcogenides by plasma-assisted selenization process toward high-yield and wafer-scale production

High‐Performance and Lithography‐Free Au/WS2/Ag Vertical Schottky Junction Solar Cells

Growth of Transition Metal Dichalcogenides by Solvent Evaporation Technique

Pronounced photovoltaic response from multi-layered transition-metal dichalcogenides PN-junctions

Photovoltaic Efficiency of Transition Metal Dichalcogenides Thin Films by Ab Initio Excited-State Methods

Thickness Tunable Wedding-Cake-like MoS2 Flakes for High-Performance Optoelectronics

Two-step Growth of VSe2 Films and Their Photoelectric Properties

Electronic and optical properties of ultra-thin 2D tungsten disulfide for photovoltaic applications