Abstract:Perpendicular synthetic ferrimagnet (pSFi) due to the low stray field and net magnetization is expected to replace single ferromagnet as a free layer to optimize the memory devices for high storage density and low-energy consumption. Here, we investigate the dependence of exchange-coupling strength on the thickness of the spacer Ru and current-induced magnetization reversal due to spin-orbit torque in Ta/Pt/[Pt/Co](2)/Ru/[Co/Pt](4)/Pt structure with a perpendicular magnetic anisotropy. An oscillating interlayer exchange coupling as a function of Ru spacer layer thickness with a period of 1.16 nm is determined by combining the anomalous Hall effect and the polar magnetic-optical Kerr effect. Furthermore, current-controllable magnetization reversal experiments reveal that the magnetizations of top and bottom layers with antiferromagnetic coupling switch simultaneously due to the combination of spin-orbit torque generated from the two adjacent heavy-metal layers and the interlayer exchange torque. The SOT efficiency chi similar to 57.52 Oe/(10(6) A/cm(2)), corresponding to an effective spin Hall angle xi(DL) similar to 0.68, is estimated by analyzing current-dependent anomalous Hall resistance with our proposed quasistatic balance equation of magnetic moments. In addition to the advantage of minimizing stray field acting on the storage layer, the observed low switching current density and high spin-orbit torque efficiency suggest that the pSFi structure with a high thermal stability factor has great potential to realize the high-density and low-power consumption of nonvolatile magnetic memory devices.

Oscillation of interlayer coupling in epitaxial FePd|Ir|FePd(001) perpendicular synthetic antiferromagnet

Low Gilbert damping and high perpendicular magnetic anisotropy in an Ir-coupled L10-FePd-based synthetic antiferromagnet

Sputtered L10‐FePd and its Synthetic Antiferromagnet on Si/SiO2 Wafers for Scalable Spintronics

Systematic Control of the Interlayer Exchange Coupling in Perpendicularly Magnetized Synthetic Antiferromagnets

Magnetization reversal and domain structures in perpendicular synthetic antiferromagnets prepared on rigid and flexible substrates

Modulation of Spin-Orbit Torque and Large Enhancement of Perpendicular Magnetic Anisotropy in by Insertion Layer

Highly Efficient Spin-Orbit Torque in a Perpendicular Synthetic Ferrimagnet

Spin-orbit torque in completely compensated synthetic antiferromagnet

Spin-orbit Torque in a Completely Compensated Synthetic Antiferromagnet

Ferromagnetic resonance and magnetization switching characteristics of perpendicular magnetic tunnel junctions with synthetic antiferromagnetic free layers

Oscillating Behavior of Magnetization in Pd/Fe and Dilute PdFe/Fe Multilayers

Determination of the spin Hall angle, spin mixing conductance and spin diffusion length in Ir/CoFeB for spin-orbitronic devices

Polarization of Pd Atoms and Interlayer Coupling in Fe-Si/Pd Multilayers

Low Gilbert damping and high thermal stability of Ru-seeded L1 0 -phase FePd perpendicular magnetic thin films at elevated temperatures

Antiferromagnetic Domain Wall Control via the Surface Spin Flop in Fully Tunable Synthetic Antiferromagnets with Perpendicular Magnetic Anisotropy

Room-Temperature van der Waals Perpendicular Ferromagnet Through Interlayer Magnetic Coupling

Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni$_{81}$Fe$_{19}$-IrO$_2$ bilayers

Polarity Manipulation of Anomalous Hall Effect and Enhanced Spin-Orbit Torques in Perpendicular Synthetic Antiferromagnets

E-field Control of the RKKY Interaction in FeCoB/Ru/FeCoB/PMN-PT (011) Multiferroic Heterostructures.

Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets

Field-free spin orbit torque switching of synthetic antiferromagnet through interlayer Dzyaloshinskii-Moriya interaction