Abstract:The two possible pathways toward artificial intelligence (AI)-(i) neuroscience-oriented neuromorphic computing [like spiking neural network (SNN)] and (ii) computer science driven machine learning (like deep learning) differ widely in their fundamental formalism and coding schemes (Pei et al., 2019). Deviating from traditional deep learning approach of relying on neuronal models with static nonlinearities, SNNs attempt to capture brain-like features like computation using spikes. This holds the promise of improving the energy efficiency of the computing platforms. In order to achieve a much higher areal and energy efficiency compared to today's hardware implementation of SNN, we need to go beyond the traditional route of relying on CMOS-based digital or mixed-signal neuronal circuits and segregation of computation and memory under the von Neumann architecture. Recently, ferroelectric field-effect transistors (FeFETs) are being explored as a promising alternative for building neuromorphic hardware by utilizing their non-volatile nature and rich polarization switching dynamics. In this work, we propose an all FeFET-based SNN hardware that allows low-power spike-based information processing and co-localized memory and computing (a.k.a. in-memory computing). We experimentally demonstrate the essential neuronal and synaptic dynamics in a 28 nm high-K metal gate FeFET technology. Furthermore, drawing inspiration from the traditional machine learning approach of optimizing a cost function to adjust the synaptic weights, we implement a surrogate gradient (SG) learning algorithm on our SNN platform that allows us to perform supervised learning on MNIST dataset. As such, we provide a pathway toward building energy-efficient neuromorphic hardware that can support traditional machine learning algorithms. Finally, we undertake synergistic device-algorithm co-design by accounting for the impacts of device-level variation (stochasticity) and limited bit precision of on-chip synaptic weights (available analog states) on the classification accuracy.

All‐Ferroelectric Spiking Neural Networks via Morphotropic Phase Boundary Neurons

Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

Spiking Neural Network Integrated with Impact Ionization Field-Effect Transistor Neuron and a Ferroelectric Field-Effect Transistor Synapse

Compact artificial neuron based on anti-ferroelectric transistor

High‐Performance Neuromorphic Computing Based on Ferroelectric Synapses with Excellent Conductance Linearity and Symmetry

Synaptic transistor with multiple biological functions based on metal-organic frameworks combined with the LIF model of a spiking neural network to recognize temporal information

Design of All-Phase-change-memory Spiking Neural Network Enabled by Ge-Ga-Sb Compound

Supervised Learning in All FeFET-Based Spiking Neural Network: Opportunities and Challenges

1T Spiking Neuron Using Ferroelectric Junctionless FET with Ultra-Low Energy Consumption of 24 aJ/Spike

Oxide semiconductor-based ferroelectric thin-film transistors for advanced neuromorphic computing

Spike Optimization to Improve Properties of Ferroelectric Tunnel Junction Synaptic Devices for Neuromorphic Computing System Applications

Ferroelectric-Like Non-Volatile FET with Amorphous Gate Insulator for Supervised Learning Applications

Compact Physical Implementation of Spiking Neural Network Using Ambipolar WSe 2 n-Type/p-Type Ferroelectric Field-Effect Transistor

Quasi-Volatile MoS 2 Barristor Memory for 1T Compact Neuron by Correlative Charges Trapping and Schottky Barrier Modulation

Van Der Waals Ferroelectric Transistors: the All-Round Artificial Synapses for High-Precision Neuromorphic Computing

Synapse with Diverse Plasticity in Ferroelectric BaTiO 3 Thin Films for Neuromorphic Computing

Brain-inspired ferroelectric Si nanowire synaptic device

Multi-terminal Ionic-Gated Low-Power Silicon Nanowire Synaptic Transistors with Dendritic Functions for Neuromorphic Systems.

The Optical-Electronic Integrated Spiking Neurons Based on Antiferroelectric Thin-Film Transistors

Synaptic Characteristic of Hafnia-Based Ferroelectric Tunnel Junction Device for Neuromorphic Computing Application