Structure, intermolecular interactions, and dynamic properties of NTO crystals with impurity defects: a computational study

Jincheng Ji,Kun Wang,Simin Zhu,Weihua Zhu

DOI: https://doi.org/10.1039/d0ce01670e

IF: 3.756

2021-01-01

CrystEngComm

Abstract:Frontier orbitals distribute in the position of impurity molecules, whose adjacent NTO molecules begin to decompose first.

chemistry, multidisciplinary,crystallography

What problem does this paper attempt to address?

Atypical Defect Motions in Brittle Layered Sodium Titanate Nanowires.

Arixin Bo,Kai Chen,Edmund Pickering,Haifei Zhan,John Bell,Aijun Du,Yongqiang Zhang,Xiaoguang Wang,Huaiyong Zhu,Zhiwei Shan,Yuantong Gu

DOI: https://doi.org/10.1021/acs.jpclett.8b02349

2018-01-01

Abstract:In situ tensile tests show atypical defect motions in the brittle Na2Ti3O7 (NTO) nanowire (NW) within the elastic deformation range. After brittle fracture, elastic recovery of the NTO NW is followed by reversible motion of the defects in a time-dependent manner. An in situ cyclic loading-unloading test shows that these mobile defects shift back and forth along the NW in accordance with the loading-unloading cycles and eventually restore their initial positions after the load is completely removed. The existence of the defects within the NTO NWs and their motions does not lead to plastic deformation of the NW. The atypical defect motion is speculated to be the result of the glidibility of the TiO6 layers, where weakly bonded cation layers are in between. Exploration of the above novel observation can establish new understandings of the deformation behavior of superlattice nanostructures.
Towards the Low-Sensitive and High-Energetic Co-Crystal Explosive CL-20/TNT: from Intermolecular Interactions to Structures and Properties

Xiu-Qing Zhang,Jiao-Nan Yuan,Gurudeeban Selvaraj,Guang-Fu Ji,Xiang-Rong Chen,Dong-Qing Wei

DOI: https://doi.org/10.1039/c8cp01841c

2018-01-01

Abstract:Employing molecular dynamic (MD) simulations and solid-state density functional theory (DFT), we carried out thorough studies to understand the interaction-structure-property interrelationship of the co-crystal explosive 1:1 CL-20:TNT. Our results revealed that the co-crystallization of CL-20 and TNT molecules enhances the intermolecular binding forces, where the main driving force for the formation of the co-crystal CL-20/TNT comes from HO and CO interactions, while OO contributes to the co-crystal stabilization. Furthermore, we also used the concept of atoms in molecule (AIM) and the reduced density gradient (RDG) to describe the spatial arrangements and interactions of co-crystal compositions, which showed that although the adjoining TNT molecules possess two symmetry groups and the adjoining CL-20 molecules possess the same symmetry group, their interactions are not identical. These spatial arrangements provide a good reference to the formation of other co-crystals. When the obtained structural and detonation properties of the three crystals were compared, it was observed that the CL-20/TNT co-crystal achieved the desirable properties of explosives, i.e., low-sensitivity and high-energy, possessing the advantages of both CL-20 and TNT explosives.
In Situ Atomistic Observation of Grain Boundary Migration Subjected to Defect Interaction

Q. Zhu,S. C. Zhao,C. Deng,X. H. An,K. X. Song,S. X. Mao,J. W. Wang

DOI: https://doi.org/10.1016/j.actamat.2020.08.021

IF: 9.4

2020-01-01

Acta Materialia

Abstract:Grain boundary (GB) migration associated with grain growth and recrystallization encounters lattice defects frequently, while the atomistic mechanisms of GB-defect interactions during these dynamic processes remain largely unclear. Here, we systematically investigate the atomistic mechanism of the interactions between migrating Σ11(113) symmetrical tilt GBs and different lattice defects, including full dislocation, stacking fault and nanotwin in Au, via the integrated in situ nanomechanical testing and molecular dynamics simulations. Experimental evidence demonstrated a conservative defect accommodation mechanism of Σ11(113) GB and a coupled GB-twin evolution, where localized atom displacement dominated the GB-defect interactions. Moreover, the shear-coupled GB migration was unperturbed by the interaction, due to the glissile residual disconnections left on the GB. These findings provide a comprehensive experimental understanding on the atomistic mechanism of GB migration under the influence of different lattice defects, which significantly advances the theoretical development of GB-dominated plasticity under more realistic circumstances.
Theoretical Study of Native Point Defects on Anatase TiO 2 (101) Surface

Ma Xin-Guo,Jiang Jian-Jun,Liang Pei

DOI: https://doi.org/10.7498/aps.57.3120

IF: 0.906

2008-01-01

Acta Physica Sinica

Abstract:First-principles plane-wave pseudopotential calculations were performed to study the energetics and the geometical structures of intrinsic vacancies and interstitials on the anatase TiO 2 (101) crystal surface. Firstly，we analyzed the effects of point defects on the geometrical structures. For the O vacancy，all the nearest-neighbor Ti atoms move away from the vacancy toward the other O neighborhood. As Ti 1 or Ti 2 is missing here，O 1 atom spontaneously and strongly binds with nearest-neighbor O on the lattice site to form an O 2 molecule. The results also show that interstitial Ti i 2 affects little host lattice and the interstitial O i would spontaneously bind to lattice oxygen. By investigating the calculated defect formation energies，we found that under the O-rich condition，the V Ti1 and O i formation are favorable，however，under the Ti-rich condition，although the point defects of Ti i 2 and V O1 easily appear，the formation energy of the Ti i 2 is lower than that of the V O1 . Finally，to determine the relative stability of the point defects，the formation enthalpies of several point defects were considered.
Thermal decomposition mechanisms and stability of NTO crystal involving molecular vacancy and surface effects: DFTB-MD and DFT studies

Caimu Wang,Jidong Zhang,Ruibin Liu,Wei Guo

DOI: https://doi.org/10.1007/s10853-023-08218-8

IF: 4.5

2023-02-19

Journal of Materials Science

Abstract:3-Nitro-1,2,4-triazole-5-one (NTO) is a potential alternative to TNT, RDX and HMX in high energy density materials (HEDMs) due to its inexpensive synthesis, excellent detonation performance, low impact sensitivity, and high thermal stability, but its underlying thermal decomposition mechanism is ambiguous. In this work, we carry out molecular dynamics simulations based on self-consistent charge density functional tight binding method to study the thermal decomposition mechanism of condensed phase NTO and consider surface and molecular vacancy effects. We observe that the initial decomposition reaction is mainly the rupture of intramolecular chemical bonds, and three primary reaction channels are proposed: cleavage of nitro group (C5 − N5 bond fracture), rupture of C3 − N2 bond in the ring and H atom transfer to carbonyl, in which C5 − N5 bond breaking plays a leading role under high temperature. At molecular vacancy and on surface, we find that the activation barriers of nitro group cleavage and H atoms migration are lower than that in ideal bulk NTO, indicating effective regulations of them on the thermal stability and decomposition reaction kinetics of NTO crystal. The above proposed reaction mechanism and the effects of molecular vacancy and surface are verified from electronic structure calculations and TG-DSC experiment with coarse and fine NTO samples. Our work may shed some light on designing HEDMs with better performance, safety and usability.

materials science, multidisciplinary
Theoretical studies on dynamic properties and intermolecular interactions of 2,4-dinitroimidazole crystals with different impurity defects

Mei Mengyun,Jincheng Ji,Zijian Sun,Weihua Zhu

DOI: https://doi.org/10.1039/d3ce01307c

IF: 3.756

2024-01-21

CrystEngComm

Abstract:Density functional tight binding (DFTB) method and DFTB-based molecular dynamics (DFTB-MD) simulations were used to study the structure, intermolecular interactions, and dynamic properties of 2,4-dinitroimidazole (2,4-DNI) crystals doped with different amounts of 1,4-dinitroimidazole (1,4-DNI) at different temperatures. As the doping concentration increases, the stability of the system decreases. It is thermodynamically most favorable to arrange the doped defects in molecular layers. The doping of the impurities changed the extreme point of the surface electrostatic potential (ESP) of the 2,4-DNI molecules, but would not change the position of the extreme point, which reduces the stability and safety of the 2,4-DNI molecules. The dynamic simulation showed that the doping of the impurities does not change the decomposition mechanism of the 2,4-DNI molecules, but effectively promotes its decomposition and the formation of intermediate products. At the initial decomposition stage, the 2,4-DNI molecules located around the impurity molecules become more easy to decompose.

chemistry, multidisciplinary,crystallography
Study on the crystal structure and properties of a new crystal form of 3-nitro-1,2,4-triazole-5-one (NTO)

Manman Wang,Xing Zhang,Zifeng Wang,Dongze Li,Shusen Chen,Qinghai Shu

DOI: https://doi.org/10.1039/d4ce00357h

IF: 3.756

2024-06-15

CrystEngComm

Abstract:3-Nitro-1,2,4-triazole-5-one (NTO) has received wide attention and has applications owing to its excellent detonation performance and low sensitivity. A new crystal form of NTO was prepared via the solvent evaporation method and named γ-NTO. Its crystal properties were studied through single-crystal X-ray diffraction, and the results indicated that the unit cell of γ-NTO belongs to the monoclinic space group Pc , with eight molecules in the single unit cell. The density of this crystal is calculated to be 1.907 g cm −3 , which is higher than that of β-NTO and similar to that of α-NTO. The crystal morphology was calculated to be a polygonal shape with a symmetrical growth pattern using the reactive force field. Based on the analysis of reactive molecular dynamics, the thermal decomposition mechanism of different crystal forms of NTO was elucidated, and the results showed that γ-NTO demonstrates higher gas production, providing a successful way to enhance detonation performance. The results of IR and differential thermal analysis (DTA) support the above conclusions.

chemistry, multidisciplinary,crystallography
Structural, Optical and Electrical Properties of R-Tio2:Sn/sno2:(f/nb) Tandem Film by Aerosol-Assisted Chemical Vapor Deposition

Likun Wang,Jingkai Yang,Hongli Zhao,Yong Liu,Gaorong Han,Jianxun Wang

DOI: https://doi.org/10.1016/j.surfin.2022.102196

IF: 6.2

2022-01-01

Surfaces and Interfaces

Abstract:A novel F and Nb co-doped SnO2 thin film with a rutile TiO2:Sn buffer layer (r-TTO/NFTO) was obtained using an aerosol-assisted chemical vapor deposition, and its micro-nano interface structure, electrical and optical prop-erties were studied in detail. Due to the little lattice mismatch between the interfaces of NFTO and r-TTO layers as well as the synergistic enhancement effect of F and Nb co-doping, the tandem film shows an improved crystallinity with minimum residual stress and fewer planar defects. The heterogeneous structure formed be-tween r-TTO and NFTO is conducive to the transfer of electrons in TiO2 to NFTO, increasing the carrier con-centration of NFTO film. Compared with FTO film, both of the carrier concentration and Hall mobility were obviously improved, the sheet resistance (5 omega/) and resistivity (2.82 x 10-4 omega cm) were reduced by 40% and 37%, respectively. Particularly, an extremely low emissivity of 0.08 was obtained, which is the lowest value for hard coatings to our knowledge.
Theoretical Study on the Point Defects in N-Doped Anatase TiO2

Fei Pei,Song Wu,Gang Wang,Ming Xu,Song-You Wang,Liang-Yao Chen,Yu Jia

DOI: https://doi.org/10.3938/jkps.53.2292

2008-01-01

Journal of the Korean Physical Society

Abstract:In this work, first-principles calculations for the electronic and the optical properties of titanium dioxide (TiO2) with point defects are performed by using a plane wave pseudopotential method in the framework of the density functional theory and the generalized gradient approximation. The point defects, substitutional and interstitial nitrogen, in anatase TiO2 are investigated to understand the origin of the visible-fight sensitivity of nitrogen (N)-doped TiO2. The results show that hands originating from substitutional N 2p states appear above the top of the valence band. These states tend to be delocalized and to mix with the valence band as the nitrogen concentration is increased. The optical absorption in the range between 400 and 700 nm is enhanced by the substitutional N impurities. The effect of interstitial N oil the elecltronic and the optical properties of TiO2 depends the interaction between the nitrogen dopants and the surrounding oxygen. The bonding between N and O introduces a series of localized occupied states under and above the upper valence band, and the electron transitions from these states improve the visible-light absorption of TiO2.
Comparison of density functionals for nitrogen impurities in ZnO

Sung Sakong,Johann Gutjahr,Peter Kratzer

DOI: https://doi.org/10.1063/1.4810862

2013-05-25

Abstract:Hybrid functionals and empirical correction schemes are compared to conventional semi-local density functional theory (DFT) calculations in order to assess the predictive power of these methods concerning the formation energy and the charge transfer level of impurities in the wide-gap semiconductor ZnO. While the generalized gradient approximation fails to describe the electronic structure of the N impurity in ZnO correctly, methods that widen the band gap of ZnO by introducing additional non-local potentials yield the formation energy and charge transfer level of the impurity in reasonable agreement with hybrid functional calculations. Summarizing the results obtained with different methods, we corroborate earlier findings that the formation of substitutional N impurities at the oxygen site in ZnO from N atoms is most likely slightly endothermic under oxygen-rich preparation conditions, and introduces a deep level more than 1eV above the valence band edge of ZnO. Moreover, the comparison of methods elucidates subtle differences in the predicted electronic structure, e.g. concerning the orientation of unoccupied orbitals in the crystal field and the stability of the charged triplet state of the N impurity. Further experimental or theoretical analysis of these features could provide useful tests for validating the performance of DFT methods in their application to defects in wide-gap materials.

Materials Science
In Situ Structural Dynamics of Atomic Defects in Tungsten Oxide

Zejian Dong,Na Zhang,Shuangbao Wang,Yuying Liu,Lifeng Zhang,Xing Chen,Langli Luo

DOI: https://doi.org/10.1021/acs.jpclett.2c01942

2022-08-11

Abstract:Atomic defects are critical to tuning the physical and chemical properties of functional materials such as catalysts, semiconductors, and 2D materials. However, direct structural characterization of atomic defects, especially their formation and annihilation under practical conditions, is challenging yet crucial to understanding the underlying mechanisms driving defect dynamics, which remain mostly elusive. Here, through in situ atomic imaging by an aberration-corrected environmental transmission electron microscope (AC-ETEM), we directly visualize the formation and annihilation mechanism of planar defects in monoclinic WO3 on the atomic scale in real time. We captured the atomistic process of the nucleation dynamics of the dislocation core in the [010] direction, followed by its propagation to form a planar defect. Corroborated by density functional theory-based calculations, we rationalize the formation of dislocation through O extraction from bridge sites followed by an atomic channeling process. These in situ observations shed light on the defect dynamics in oxides and provide atomic insights into forming and manipulating defects in functional materials.
The electronic and magnetic structure of p-element (C,N) doped rutile-TiO$_{2}$; A hybrid DFT study

Jacqueline Atanelov,Christoph Gruber,Peter Mohn

DOI: https://doi.org/10.1016/j.commatsci.2014.10.041

2015-01-22

Abstract:We study the electronic and magnetic structure of carbon and nitrogen impurities and interstitials in rutile TiO${_2}$. To this end we perform \textit{ab-initio} calculations of a 48-atom supercell employing the VASP code. In order to obtain a realistic description of the electronic and magnetic structure, exchange and correlation are treated with the HSE06 hybrid functional. Both, atomic positions and cell dimensions are fully relaxed. Substitutional carbon and nitrogen are found to have a magnetic moment of 2 and 1$\mu{_B}$, respectively, with a tendency for anti-ferromagnetic long range order. For C/N on interstitial sites we find that carbon is non-magnetic while nitrogen always possesses a magnetic moment of 1$\mu{_B}$. We find that these interstitial positions are on a saddle point of the total energy. The stable configuration is reached when both carbon and nitrogen form a C-O and N-O dimer with a bond length close to the double bond for CO and NO. This result is in agreement with earlier experimental investigations detecting such N-O entities from XPS measurements. The frequencies of the symmetric stretching mode are calculated for these dimers, which could provide a means for experimental verification. For all configurations investigated both C and N states are found inside the TiO${_2}$ gap. These new electronic states are discussed with respect to tuning doped TiO${_2}$ for the application in photocatalysis

Materials Science
Role of oxygen impurity on the mechanical stability and atomic cohesion of Ta₃N₅ semiconductor photocatalyst.

Jiajia Wang,Jianyong Feng,Li Zhang,Zhaosheng Li,Zhigang Zou

DOI: https://doi.org/10.1039/c4cp00120f

IF: 3.3

2014-01-01

Physical Chemistry Chemical Physics

Abstract:Oxygen is a natural impurity in the Ta3N5 semiconductor photocatalyst and very difficult to be completely eliminated in different growth conditions. In this study, density functional theory calculations are performed to unravel the cause of natural existence of oxygen impurity in Ta3N5 from the perspectives of mechanical stability and atomic cohesion. The elastic properties calculations show that the oxygen impurity in Ta3N5 is able to remedy the weakened mechanical stability induced by the nitrogen vacancy in Ta3N5. The atomic cohesion calculations show that the oxygen impurity in Ta3N5 enlarges the valence band width of Ta3N5, suggesting that the oxygen impurity is able to strengthen the atomic cohesion of Ta3N5. Based on our calculation results, we propose that the charge-compensation codoping is a promising strategy to improve the water splitting ability of Ta3N5 and simultaneously maintain the mechanical stability and enhanced atomic cohesion of Ta3N5.
Influence of Impurities on Defect Formation and Oxygen Diffusion in TiN

Bakulin, A. V.,Kulkova, S. E.

DOI: https://doi.org/10.1007/s11182-024-03223-z

2024-08-28

Russian Physics Journal

Abstract:The effect of substitutional impurities on the formation energy of nitrogen vacancies and the oxygen defect on the N-sublattice as well as on the oxygen migration energy in TiN is studied using the projector augmented wave method. It has been shown that 4d transition metals with the exception of Zr and elements of IIIA and IVA groups excluding Al and Si reduce the formation energy of nitrogen vacancies. At the same time, regardless of the impurity, the formation energy of the oxygen defect has a negative value. The oxygen migration energy within the first coordination sphere is increased by almost all impurities, while metals of the middle of the 4dperiod slightly lower the migration barrier of oxygen, which allows it to move away from the impurity atom. The lower and upper limits of the temperature-dependent diffusion coefficient of oxygen in the doped titanium nitride are estimated. It has been revealed that almost all considered impurities reduce the diffusion coefficient mainly due to a change in the migration energy.

physics, multidisciplinary
Structural, Electronic, and Optical Properties of Oxygen Defects in Zn3N2

Run Long,Ying Dai,Lin Yu,Meng Guo,Baibiao Huang

DOI: https://doi.org/10.1021/jp0667902

IF: 3.466

2007-01-01

The Journal of Physical Chemistry B

Abstract:The structural, electronic, and optical properties of oxygen-defective Zn(3)N(2) were studied by means of density functional theory. The geometry optimization result shows that pure Zn(3)N(2) is cubic in structure, which is in agreement with experiment. Our results indicate that Zn(3)N(2) with nitrogen replaced by oxygen is more stable than that with interstitial oxygen and the substitutional oxygen for nitrogen in defective Zn(3)N(2) is responsible for the n-type conduction character. The possible optical transition mechanisms are discussed.
Electronic structures and optical properties of rutile TiO2 with different point defects from DFT + U calculations

H.X. Zhu,P.X. Zhou,X. Li,J.-M. Liu

DOI: https://doi.org/10.1016/j.physleta.2014.07.029

IF: 2.707

2014-01-01

Physics Letters A

Abstract:The electronic states and formation energies of four types of lattice point defects in rutile TiO2 are studied using the first-principles calculations. The existence of oxygen vacancy leads to a deep donor defect level in the forbidden band, while the Ti interstitial forms two local states. It is predicted that oxygen vacancy prefers to combine with Ti-interstitial to form VO–Tii dimer by a partial 3d electron transfer from the Tii to its neighboring VO. The charge distribution between a Ti interstitial and its neighboring Ti ions partially shields the Coulomb interactions. Lastly, optical properties of these defective lattices are discussed.
Dynamics Studies of Nitrogen Interstitial in GaN from Ab Initio Calculations

Huan He,Wenbo Liu,Pengbo Zhang,Wenlong Liao,Dayin Tong,Lin Yang,Chaohui He,Hang Zang,Hongxiang Zong

DOI: https://doi.org/10.3390/ma13163627

IF: 3.4

2020-08-17

Materials

Abstract:Understanding the properties of defects is crucial to design higher performance semiconductor materials because they influence the electronic and optical properties significantly. Using ab initio calculations, the dynamics properties of nitrogen interstitial in GaN material, including the configuration, migration, and interaction with vacancy were systematically investigated in the present work. By introducing different sites of foreign nitrogen atom, the most stable configuration of nitrogen interstitial was calculated to show a threefold symmetry in each layer and different charge states were characterized, respectively. In the researches of migration, two migration paths, in-plane and out-of-plane, were considered. With regards to the in-plane migration, an intermediated rotation process was observed first time. Due to this rotation behavior, two different barriers were demonstrated to reveal that the migration is an anisotropic behavior. Additionally, charged nitrogen Frenkel pair was found to be a relatively stable defect complex and its well separation distance was about 3.9 Å. Part of our results are in good agreement with the experimental results, and our work provides underlying insights of the identification and dynamics of nitrogen interstitial in GaN material. This study of defects in GaN material is useful to establish a more complete theory and improve the performance of GaN-based devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
The Electronic Structure of Oxygen Atom Vacancy and Hydroxyl Impurity Defects on Titanium Dioxide (110) Surface.

Taketoshi Minato,Yasuyuki Sainoo,Yousoo Kim,Hiroyuki S. Kato,Ken-ichi Aika,Maki Kawai,Jin Zhao,Hrvoje Petek,Tian Huang,Wei He,Bing Wang,Zhuo Wang,Yan Zhao,Jinlong Yang,J. G. Hou

DOI: https://doi.org/10.1063/1.3082408

2009-01-01

Abstract:Introducing a charge into a solid such as a metal oxide through chemical, electrical, or optical means can dramatically change its chemical or physical properties. To minimize its free energy, a lattice will distort in a material specific way to accommodate (screen) the Coulomb and exchange interactions presented by the excess charge. The carrier-lattice correlation in response to these interactions defines the spatial extent of the perturbing charge and can impart extraordinary physical and chemical properties such as superconductivity and catalytic activity. Here we investigate by experiment and theory the atomically resolved distribution of the excess charge created by a single oxygen atom vacancy and a hydroxyl (OH) impurity defects on rutile TiO(2)(110) surface. Contrary to the conventional model where the charge remains localized at the defect, scanning tunneling microscopy and density functional theory show it to be delocalized over multiple surrounding titanium atoms. The characteristic charge distribution controls the chemical, photocatalytic, and electronic properties of TiO(2) surfaces.
Atomic geometry and electronic structure of defects in Zn3N2

Run Long,Ying Dai,Lin Yu,Baibiao Huang,Shenghao Han

DOI: https://doi.org/10.1016/j.tsf.2007.06.107

IF: 2.1

2008-01-01

Thin Solid Films

Abstract:Atomic geometry, electronic structure and formation energy of native defects in Zn3N2 films have been studied by means of density functional theory to interpret the different behaviors of defective Zn3N2. The effects of the vacancy and self-interstitial N on electronic and optical properties of zinc nitride were investigated, from which we conclude that N vacancy is responsible for n-type conduction character. Various defects may cause energy shift or gap change, which explains different optical band gap detected in Zn3N2 samples.
The Electronic Effect of N Impurity in an Edge Dislocation Core System in Α-Iron

Y Niu,SY Wang,DL Zhao,CY Wang

DOI: https://doi.org/10.1016/s0927-0256(01)00183-5

IF: 3.572

2001-01-01

Computational Materials Science

Abstract:First-principles methods are employed to investigate the structure relaxation and the electronic structure of a N impurity in an 〈100〉 edge dislocation core (DC) system in α-iron. A 96-atom cluster model is used to simulate the local environment of N impurity in the edge dislocation. By use of the DMol method, we obtained an optimized atomic configuration for the system by calculating the forces on N impurity and its neighboring Fe atoms, and by minimizing the total energy of the cluster model. The optimization results show that the N impurity moves away from compression region to a stable position in the dilated region. By use of the discrete variational (DV) method, we calculated energetic parameters (structural energy and interatomic energy) and charge distribution. From these results, one can find that N impurity has a strong interaction with its adjacent Fe atoms in the DC system. Moreover, notable charge redistribution between the N impurity and Fe atoms indicates the formation of N impurity–Fe dislocation complex, which implies the trapping effect of DC on N impurity.

Structure, intermolecular interactions, and dynamic properties of NTO crystals with impurity defects: a computational study

Atypical Defect Motions in Brittle Layered Sodium Titanate Nanowires.

Towards the Low-Sensitive and High-Energetic Co-Crystal Explosive CL-20/TNT: from Intermolecular Interactions to Structures and Properties

In Situ Atomistic Observation of Grain Boundary Migration Subjected to Defect Interaction

Theoretical Study of Native Point Defects on Anatase TiO 2 (101) Surface

Thermal decomposition mechanisms and stability of NTO crystal involving molecular vacancy and surface effects: DFTB-MD and DFT studies

Theoretical studies on dynamic properties and intermolecular interactions of 2,4-dinitroimidazole crystals with different impurity defects

Study on the crystal structure and properties of a new crystal form of 3-nitro-1,2,4-triazole-5-one (NTO)

Structural, Optical and Electrical Properties of R-Tio2:Sn/sno2:(f/nb) Tandem Film by Aerosol-Assisted Chemical Vapor Deposition

Theoretical Study on the Point Defects in N-Doped Anatase TiO2

Comparison of density functionals for nitrogen impurities in ZnO

In Situ Structural Dynamics of Atomic Defects in Tungsten Oxide

The electronic and magnetic structure of p-element (C,N) doped rutile-TiO$_{2}$; A hybrid DFT study

Role of oxygen impurity on the mechanical stability and atomic cohesion of Ta₃N₅ semiconductor photocatalyst.

Influence of Impurities on Defect Formation and Oxygen Diffusion in TiN

Structural, Electronic, and Optical Properties of Oxygen Defects in Zn3N2

Electronic structures and optical properties of rutile TiO2 with different point defects from DFT + U calculations

Dynamics Studies of Nitrogen Interstitial in GaN from Ab Initio Calculations

The Electronic Structure of Oxygen Atom Vacancy and Hydroxyl Impurity Defects on Titanium Dioxide (110) Surface.

Atomic geometry and electronic structure of defects in Zn3N2

The Electronic Effect of N Impurity in an Edge Dislocation Core System in Α-Iron