Abstract:Ferroelectric (FE) materials possess electrically switchable spontaneous polarizations, showing broad applications in various functional devices. Call for the miniaturization of electronic devices, two-dimensional (2D) van der Waals (vdW) ferroelectric materials and the corresponding bulk counterpart trigger more interest of researchers. Recently, several kinds 2D vdW ferroelectrics have been fabricated in experiment. These 2D vdW FEs, as well as their bulk counterpart, exhibit novel properties, as demonstrated in experiment or theoretically predicted. This paper attempts to review the recent progress on exotic properties of several vdW ferroelectrics. In chapter II, we introduce the unusual ferroelectric property—a uniaxial quadruple potential well for Cu displacements—enabled by the van der Waals gap in copper indium thiophosphate (CuInP 2 S 6 ). The electric field drive the Cu atoms unidirectionally across the vdW gaps, which is distinctively different from dipole reorientation, resulting in an unusual phenomenon that the polarization of CuInP 2 S 6 aligns against the direction of the applied electric field. The potential energy landscape for Cu displacements is strongly influenced by strain, accounting for the origin of the negative piezoelectric coefficient and rendering CuInP 2 S 6 a rare example of a uniaxial multi-well ferroelectric. In chapter III, we introduce the distinct geometric evolution mechanism of the newly reported M 2 Ge 2 Y 6 (M=metal, X=Si, Ge, Sn, Y=S, Sn, Te) monolayers and a high throughput screening of 2D ferroelectric candidates based on this mechanism. The origination of the ferroelectricity of M 2 Ge 2 Y 6 is the vertical displacement of Ge-dimer in the same direction driven by a soft phonon mode of the centrosymmetric configuration. Another centrosymmetric configuration is also dynamically stable but higher in energy comparing with the ferroelectric phase. The metastable centrosymmetric phase of M 2 Ge 2 Y 6 monolayers allows a new two-step ferroelectric switching path and may induce novel domain behaviors. In chapter IV, a new concept that constructing 2d ferroelectric QL-M 2 O 3 /graphene heterostructure to realize monolayer-based FE tunnel junctions or potentially graphene p–n junctions are reviewed. These findings provide new perspectives on the integration of graphene and monolayer FEs, as well as related functional devices. Finally, the challenge and prospect of vdW ferroelectrics are discussed, aiming to provide some perspective for the field of ferroelectrics.

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