Abstract:A polarization photodetector based on in‐sublattice carrier transition in the CdSb2Se3Br2/WSe2 heterostructure, with a giant and reconfigurable PR value, is proposed. By changing the gate voltage, the device exhibits reconfigurable PR values from positive to negative, covering all possible numbers (1→+∞/−∞→−1). Moreover, gate‐tunable polarimetric imaging is implemented. This work makes a conceptual advance in designing next‐generation miniaturized highly polarization‐sensitive optoelectronics. Miniaturized polarimetric photodetectors based on anisotropic two‐dimensional materials attract potential applications in ultra‐compact polarimeters. However, these photodetectors are hindered by the small polarization ratio values and complicated artificial structures. Here, a novel polarization photodetector based on in‐sublattice carrier transition in the CdSb2Se3Br2/WSe2 heterostructure, with a giant and reconfigurable PR value, is demonstrated. The unique periodic sublattice structure of CdSb2Se3Br2 features an in‐sublattice carrier transition preferred along Sb2Se3 chains. Leveraging on the in‐sublattice carrier transition in the CdSb2Se3Br2/WSe2 heterostructure, gate voltage has an anisotropic modulation effect on the band alignment of heterostructure along sublattice. Consequently, the heterostructure exhibits a polarization‐tunable photo‐induced threshold voltage shift, which provides reconfigurable PR values from positive (unipolar regime) to negative (bipolar regime), covering all possible numbers (1→+∞/−∞→−1). Using this anisotropic photovoltaic effect, gate‐tunable polarimetric imaging is successfully implemented. This work provides a new platform for developing next‐generation highly polarimetric optoelectronics.

Polarimetric Image Sensor and Fermi Level Shifting Induced Multichannel Transition Based on 2D PdPS (Adv. Mater. 2/2022)

Polarization- and Gate-Tunable Optoelectronic Reverse in 2D Semimetal/Semiconductor Photovoltaic Heterostructure.

Dual-band polarized photodetector based on van der Waals heterojunction

Progress and Perspective of Polarization-Sensitive Perovskite Photodetectors

2D materials-based photodetectors combined with ferroelectrics

Moiré Perovskite Photodetector toward High‐Sensitive Digital Polarization Imaging (Adv. Energy Mater. 29/2021)

Highly Polarization-Sensitive, Broadband, Self-Powered Photodetector Based on Graphene/PdSe2/Germanium Heterojunction.

Multifunctional Photodetector with Tunable Response Bandwidth and Polarization Sensitivity

Polarization photodetectors with configurable polarity transition enabled by programmable ferroelectric-doping patterns

Polarization and Spectrum Multi‐Dimensional Sensitive Perovskite Photodetectors

Highly Sensitive Broadband Polarized Photodetector Based on the As0.6P0.4/WSe2 Heterostructure toward Imaging and Optical Communication Application

In‐Sublattice Carrier Transition Enabled Polarimetric Photodetectors with Reconfigurable Polarity Transition

Effective Piezo‐Phototronic Enhancement of Flexible Photodetectors Based on 2D Hybrid Perovskite Ferroelectric Single‐Crystalline Thin‐Films (Adv. Mater. 32/2021)

Revealing Electrical‐Poling‐Induced Polarization Potential in Hybrid Perovskite Photodetectors

In-Sensor Polarimetric Optoelectronic Computing Based on Gate-Tunable 2D Photodetector

Gate‐Modulated and Polarization‐Sensitive Photodetector Based on the MoS2/PdSe2 Out‐Of‐Plane Van Der Waals Heterostructure

High-Responsivity Multiband and Polarization-Sensitive Photodetector Based on the TiS 3 /MoS 2 Heterojunction

Multimechanism Synergistic Photodetectors with Ultrabroad Spectrum Response from 375 Nm to 10 Μm.

Bias-Switchable Photomultiplication and Photovoltaic Dual-Mode Flexible Near-Infrared Organic Photodetector

Polarization-sensitive Infrared Photodetectors Based on Van Der Waals Heterojunction with the Unilateral Depletion Region

Multi-dimensional optical information acquisition based on a misaligned unipolar barrier photodetector