Abstract:The integration of 2D materials with other dimensional materials opens up rich possibilities for both fundamental physics and exotic nanodevices. However, current mixed-dimensional heterostructures often suffer from interfacial contact issue and environment-induced degradation, which severely limits their performance in electronics/optoelectronics. Herein, we demonstrate a novel BN-encapsulated CuO/MoS2 2D-1D van der Waals heterostructure photodetectors with an ultrahigh photoresponsivity up to 2790 A/W, which is 10-folds higher than the previous 2D-1D counterparts. The interfacial contact state and photodetection capabilities of 2D-1D heterojunctions are significantly improved via femtosecond laser irradiation induced MoS2 wrapping and contamination removing. The h-BN encapsulation effectively protects the mixed-dimensional photodetector from electrically depleting by gas molecules such as O2 and H2O during fs laser irradiation and operation process. The fs laser absorption can be enhanced at the 2D-1D and metal-semiconductor interface through h-BN encapsulation. This high-k protected devices show a highly sensitive, gate-tunable and robust photoelectronic properties. By controlling the gate and source-drain bias, the responsivity and temporal response can be tuned by several orders of magnitude with photoresponsivity from 288 A/W to 2790 A/W, detectivity as high as 1.2×1012 Jones, and typical rise time from 15s to 20 ms. This work provides a new way for the further development of high performance, low cost, and robust mixed-dimensional heterostructures photodetectors by femtosecond laser contact engineering.

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