Abstract:The precise manipulation of atoms enables the creation of distinct materials from the bottom up to construct devices with breakthrough performance, especially in the field of quantum technologies. A large magnetic anisotropy energy (MAE) is important to realize bit storage of information in magnetic memory devices. As the smallest magnetic nanostructure, substrate-supported transition metal dimers are potential atomic-scale storage medium to obtain large MAEs. Using high-throughput first-principles calculations, we have performed a systematic investigation of the MAE of 76 heterodimensional systems consisting of zero-dimensional Os-Ru dimer and experimentally synthesized two-dimensional transition metal dichalcogenides (TMDs). Huge MAEs in the range of 102.09–247.69 meV were found in 13 of these heterodimensional systems. In particular, the Os-Ru@T-ZrSe2 with the largest MAE of 247.69 meV corresponds to a theoretical blocking temperature (67 K) in terms of a relaxation time of 10 years and a storage density of 281 Tb·inch−2. The underlying mechanism for the significant enhancement of MAE is attributed to the rearrangement of the in-plane molecular orbitals near the Fermi level, which is closed relative to the electron transfer capability between the Os-Ru dimer and the TMD substrates. In addition, we have also constructed a heat map for TMD-supported Os-Ru dimer, showing the degree of correlation between MAEs and feature descriptors. Our work not only suggests an effective way to improve MAE of transition metal dimers but also extracts relatively simple rules for substrate selection.

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Large Low Field Magnetocaloric Effect in First-Order Phase Transition Compound TlFe3Te3 with Low-Level Hysteresis.

Manipulation of Spin and Magnetic Anisotropy in Bilayer Magnetic Molecular Junctions.

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Giant Magnetic Anisotropy of Transition-Metal Dimers on Defected Graphene from the First-Principles Calculations

Tunable Magnetism in Transition-Metal-Decorated Phosphorene

Magnetic Phase Transition and Giant Anisotropic Magnetic Entropy Change in Tbfeo3 Single Crystal

The magnetic anisotropy of Tb-phthalocyanine films effected by molecular orientation

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Large magnetic anisotropy and enhanced Curie temperature in two-dimensional MnTe2 coupled with β-phase group-VA semiconductor monolayers

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Giant Anisotropic Magnetoresistance in Magnetic Monolayers CrPX3 (X = S, Se, Te) due to symmetry breaking between the in-plane and out-of-plane crystallographic axes

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