Dissolution–precipitation growth of doped monolayer molybdenum disulfide through double-faced precursor supply

Yongjue Lai,Junyang Tan,Zhengyang Cai,Rongjie Zhang,Changjiu Teng,Shilong Zhao,Junhao Lin,Bilu Liu
DOI: https://doi.org/10.1063/5.0048946
IF: 6.6351
2021-05-01
APL Materials
Abstract:Substitutional doping is a powerful strategy to modulate the properties and functionalities of two-dimensional (2D) materials while control of dopants during the process is still challenging. Recently, we invented a dissolution–precipitation (DP) method to grow 2D materials. Here, we further extend this method by developing a double-faced precursor supply DP growth strategy to substitutionally dope metal atoms into monolayer MoS<sub>2</sub> lattices. In this double-faced precursor supply DP method, the Mo source and dopant source are supplied from the bottom and top surface of the glass substrate, respectively, to separate their diffusion paths. As a result, monolayer MoS<sub>2</sub> incorporated with different concentrations of V atoms were grown by tuning the amount of V precursor, which exhibited different types of electrical transport properties. This new doping method is universal in growing several transition metal atom doped MoS<sub>2</sub>, including Re, Fe, and Cr, which will extend the applications of 2D materials.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
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