Macroscopic Assembled Graphene for Silicon Mid-Infrared Photodetectors
Chao Gao,Li Peng,Sichao Du,Lixiang Liu,Srikrishna Bodepudi,Lingfei Li,Wei Liu,Xin Cong,Runchen Lai,Wenzhang Fang,Xiaoxue Cao,Xinyu Liu,Muhammad Abid,Jianhang Lv,Junxue Liu,Shengye Jin,Kaifeng Wu,Qiaohui Zhou,Haiming Zhu,Miao-Ling Lin,Ping-Heng Tan,Qihua Xiong,Xiaomu Wang,Weida Hu,Xiangfeng Duan,Bin Yu,Wenyan Yin,Zhen Xu,Yang Xu
DOI: https://doi.org/10.21203/rs.3.rs-75687/v1
2020-01-01
Abstract:Abstract Graphene with linear energy dispersion and weak electron-phonon interaction is highly anticipated to harvest hot-electrons in a broad wavelength range from ultraviolet to terahertz. However, the limited absorption (~2.3%) and serious backscattering of hot-electrons associated with single-layer graphene result in inadequate quantum yields, impeding their practically broadband photodetection, especially in the mid-infrared range. Here, we report a macroscopic assembled graphene (MAG)/silicon heterojunction for ultrafast mid-infrared photodetection. The highly crystalline 2-inch scale MAG with tunable thickness from 10 to 60 nm is produced by scalable wet-assembly of commercial graphene oxide followed by thermal annealing. The MAG/Si Schottky diode exhibits broadband photodetection capability in 1-10 μm at room temperature with fast response (120-130 ns, 4 mm2 window) and high detectivity (1011 to 106 Jones), outperforming single-layer graphene/Si photodetectors by 2 to 8 orders in transient photocurrent. This optoelectronic performance is attributed to the superior advantages of MAG (~40% of light absorption, ~23 ps of carrier relaxation time, and high quasi-equilibrated hot-carrier-multiplication gain), atomic-scale contact interface of MAG and silicon, and impact-ionization avalanche gain (~100 times) from silicon. The MAG provides a long-range platform to understand the hot-carrier dynamics in stacked 2D materials, leading to next-generation broadband silicon-based image sensors.