Characterization of in‐plane piezoelectric strain of ferroelectric thin films by the magnetoelectric coupling effect

Mengmeng Guan,Jiaxuan Zhang,Haowen Tang,Qi Lu,Bin Peng,Ming Liu
DOI: https://doi.org/10.1002/adem.202301432
IF: 3.6
2023-11-20
Advanced Engineering Materials
Abstract:Piezoelectric response of the ferroelectric/piezoelectric thin films is crucial for actuation of MEMS devices as well as strain‐mediated electronic devices. Among many piezoelectric modes, longitudinal and transverse piezo‐strain is the most widely used. Various methods have been well‐established for quantitative characterization of the longitudinal piezo‐strain, such as laser interferometer and piezoelectric force microscopy. However, it is still a great challenge to characterize transverse piezo‐strain. In this study, we establish a new method to characterize the transverse (in‐plane) piezo‐strain of ferroelectric/piezoelectric thin films by the inverse magnetoelectric (ME) coupling effect. A ferromagnetic thin film is patterned onto the ferroelectric thin film to form an artificial multiferroic heterostructure. The transverse piezo‐strain could transfer from the ferroelectric layer to the ferromagnetic layer and shift its ferromagnetic resonance field through the ME coupling effect. By comparing with a control sample of “bulk piezo‐ceramic/ferromagnetic thin film” whose in‐plane piezo‐strain could be easily measured, the in‐plane piezo‐strain and piezoelectric coefficient of the ferroelectric thin films are then estimated. The in‐plane piezoelectric coefficient d 31 and piezoelectric strain S 31 of PZT thin films were measured by this method. This new method will promote fully understand the piezoelectric properties of the ferroelectric/piezoelectric thin films. This article is protected by copyright. All rights reserved.
materials science, multidisciplinary
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