Abstract:Nanoparticles (NPs) have had increasingly successful applications including in emissive or photovoltaic devices; however, trap states associated with the surface of NPs often drastically reduce the efficiency of devices and are difficult to detect spectroscopically. We show the applicability of photoconduction as the means of detecting and quantifying trap states in NPs. We performed time-of-flight (ToF) photoconduction measurements, using semiconducting poly[bis(4-phenyl)(4-butyphenyl)amine] (P-TPD) doped with either core/shell CdSeS/CdS quantum dots (QDs) or perovskite CsPbBr3 NPs, both of which are carefully designed to be energetically matched. In the case of the QDs, a drop in the hole mobility from ∼10-3 to ∼10-4 cm2 V-1 s-1 was observed when compared to a control sample, suggesting the presence of a hole trapping. These trap states were found to be around -5.0 to -4.9 eV from the vacuum level. The presence of the trap states was further supported by a coincident reduction in the photoluminescence (PL), quantum yield (QY), and lifetime of the core/shell QDs after purification. Using the measured reductions in the PL, QY, and lifetime, the surface trap state density was estimated to increase by between 20 and 40%, most likely due to a ligand detachment. In the case of the perovskite NP-doped samples, a mobility of ∼10-3 cm2 V-1 s-1 was measured. Thus, doping with perovskite NPs did not generate any obvious hole trapping from the P-TPD matrix. The absence of a trapping may be related to the reduced surface-to-volume ratio and NP number density of the perovskite NPs compared to the core/shell QDs, since the perovskite NPs are approximately 10 times larger in radius than that of the core/shell QDs. Our results suggest that to minimize the presence of trap states with a view to improving device performance, large-size perovskite NPs appear to be better than small-size QDs.

Optoelectronically probing the density of nanowire surface trap states to the single state limit

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Cryogenically Probing The Surface Trap States Of Single Nanowires Passivated With Self-Assembled Molecular Monolayers

Etching-Engineered Low-Voltage Dielectrophoretic Nanotweezers for Trapping of Single Molecules.

Controlling Nanogap Quantum Dot Photoconductivity through Optoelectronic Trap Manipulation

Energetics of Nonradiative Surface Trap States in Nanoparticles Monitored by Time-of-Flight Photoconduction Measurements on Nanoparticle-Polymer Blends

Light-Driven Conversion of Silicon Nitride Nanopore to Nanonet for Single-Protein Trapping Analysis

Charge Trapping in Surface Accumulation Layer of Heavily Doped Junctionless Nanowire Transistors

In-Situ Determination of the Flat Band Carrier Concentration and Surface Charge Density of Individual Semiconductor Nanowires by A Combination of Electrical and Field Emission Measurements

Extraction Of The Surface Trap Level From Photoluminescence: A Case Study Of Zno Nanostructures

Demonstration of a State-Insensitive, Compensated Nanofiber Trap

Electronic Trap Detection with Carrier-Resolved Photo-Hall Effect

Boosting the Performance of Liquid‐Gated Nanotransistor Biosensors Using Single‐Trap Phenomena

Detrapping Current Measurement System Driven by Triboelectric Nanogenerators for Mapping Electron Trap States in Dielectrics

Trapped Charge Dynamics in Inas Nanowires

Density of Deep Trap States in Oriented TiO2 Nanotube Arrays

Probing surface electric field noise with a single ion

Proposal for Atom Traps with Low Power by Surface Plasmon Polaritons on the Short Waveguide

Measuring the Electrical Properties of Semiconductor Nanowires Using Terahertz Conductivity Spectroscopy

Study of microscopic mechanisms in HAT-CN/NPB interface devices under consideration of trap action

Nanomechanical pump–probe measurements of insulating electronic states in a carbon nanotube