Abstract:We use time-resolved charge detection techniques to investigate single-electron tunneling in semiconductor quantum dots. The ability to detect individual charges in real-time makes it possible to count electrons one-by-one as they pass through the structure. The setup can thus be used as a high-precision current meter for measuring ultra-low currents, with resolution several orders of magnitude better than that of conventional current meters. In addition to measuring the average current, the counting procedure also makes it possible to investigate correlations between charge carriers. In quantum dots, we find that the strong Coulomb interaction makes electrons try to avoid each other. This leads to electron anti-bunching, giving stronger correlations and reduced noise compared to a current carried by statistically independent electrons. The charge detector is implemented by monitoring changes in conductance in a near-by capacitively coupled quantum point contact. We find that the quantum point contact not only serves as a detector but also causes a back-action onto the measured device. Electron scattering in the quantum point contact leads to emission of microwave radiation. The radiation is found to induce an electronic transition between two quantum dots, similar to the absorption of light in real atoms and molecules. Using a charge detector to probe the electron transitions, we can relate a single-electron tunneling event to the absorption of a single photon. Moreover, since the energy levels of the double quantum dot can be tuned by external gate voltages, we use the device as a frequency-selective single-photon detector operating at microwave energies.

Probing electron dwell time in quantum dots through pulsed conductance analysis

Electron counting in quantum dots

Time-Resolved Detection of Individual Electrons in a Quantum Dot

Real-time Counting of Single Electron Tunneling Through a T-shaped Double Quantum Dot System

Convenient Exciton Lifetime Measurement of Quantum Dots with High Resolution

Detector-induced Backaction on the Counting Statistics of a Double Quantum Dot.

Correlated Electron Transport Through Parallel Double-Quantum-dot

Probing single charge fluctuations in a semiconductor with laser spectroscopy on a quantum dot

Real-time detection and control of correlated charge tunneling in a quantum dot

Real Time Electron Tunneling and Pulse Spectroscopy in Carbon Nanotube Quantum Dots

Measuring the arrival time of an electron wave packet using a dynamical potential barrier

Probing relaxation times in graphene quantum dots

Waiting time distribution revealing the internal spin dynamics in a double quantum dot

Metastable Excited States of a Closed Quantum Dot Probed by an Aluminum Single-Electron Transistor

Observation of Quantum Fluctuations of Charge on a Quantum Dot

Measuring the Coherence of Charge States in Undoped Gaas/Algaas Double Quantum Dots with Photon-Assisted Tunneling

A quantitative study of spin-flip co-tunneling transport in a quantum dot

Effects of different geometries on the conductance, shot noise and tunnel magnetoresistance of double quantum dots

Strongly correlated charge transport in silicon MOSFET quantum dots

Study on Transient Spectrum Based on Charge Transfer of Semiconductor Quantum Dots

The Effect of Surface Conductance on Lateral Gated Quantum Devices in Si/Sige Heterostructures