Growth kinetics and atomistic mechanisms of native oxidation of ZrS$_x$Se$_{2-x}$ and MoS$_2$ crystals
Seong Soon Jo,Akshay Singh,Liqiu Yang,Subodh C. Tiwari,Sungwook Hong,Aravind Krishnamoorthy,Maria Gabriela Sales,Sean M. Oliver,Joshua Fox,Randal L. Cavalero,David W. Snyder,Patrick M. Vora,Stephen J. McDonnell,Priya Vashishta,Rajiv K. Kalia,Aiichiro Nakano,Rafael Jaramillo
DOI: https://doi.org/10.1021/acs.nanolett.0c03263
2020-11-17
Abstract:A thorough understanding of native oxides is essential for designing semiconductor devices. Here we report a study of the rate and mechanisms of spontaneous oxidation of bulk single crystals of ZrS$_x$Se$_{2-x}$ alloys and MoS$_2$. ZrS$_x$Se$_{2-x}$ alloys oxidize rapidly, and the oxidation rate increases with Se content. Oxidation of basal surfaces is initiated by favorable O$_2$ adsorption and proceeds by a mechanism of Zr-O bond switching, that collapses the van der Waals gaps, and is facilitated by progressive redox transitions of the chalcogen. The rate-limiting process is the formation and out-diffusion of SO$_2$. In contrast, MoS$_2$ basal surfaces are stable due to unfavorable oxygen adsorption. Our results provide insight and quantitative guidance for designing and processing semiconductor devices based on ZrS$_x$Se$_{2-x}$ and MoS$_2$, and identify the atomistic-scale mechanisms of bonding and phase transformations in layered materials with competing anions.
Materials Science