Edge-dependent photogalvanic effect in 1T′-ReS_2-based polarization self-powered photodetectors

Meng Ge,Degao Xu,Jianing Tan,Gang Ouyang

DOI: https://doi.org/10.1364/oe.538573

IF: 3.8

2024-11-06

Optics Express

Abstract:Meng Ge, Degao Xu, Jianing Tan, Gang Ouyang Polarization photodetectors with linear/circular photogalvanic effect (L/CPGE) have garnered significant attention due to their wide range ... [Opt. Express 32, 42418-42428 (2024)]

optics

What problem does this paper attempt to address?

Self-powered Photogalvanic Phosphorene Photodetectors with High Polarization Sensitivity and Suppressed Dark Current.

Shuaishuai Li,Tao Wang,Xiaoshuang Chen,Wei Lu,Yiqun Xie,Yibin Hu

DOI: https://doi.org/10.1039/c8nr00484f

IF: 6.7

2018-01-01

Nanoscale

Abstract:High polarization sensitivity, suppressed dark current and low energy consumption are all desirable device properties for photodetectors. In this work, we propose phosphorene-based photodetectors that are driven using photogalvanic effects (PGEs). The inversion symmetry of pristine phosphorene is broken using either application of an out-of-plane gate voltage or a heterostructure that is composed of the original phosphorene and blue phosphorene. The potential asymmetry enables PGEs under illumination by polarized light. Quantum transport calculations show that robust photocurrents are indeed generated by PGEs under a zero external bias voltage because of the broken inversion symmetry. These results indicate that the proposed photodetector is self-powered. In addition, the zero bias voltage eliminates the dark currents that are caused by application of an external bias voltage to traditional photodetectors. High polarization sensitivity to both linearly and circularly polarized light can also be realized, with extinction ratios ranging up to 102. The photoresponse of the proposed phosphorene/blue phosphorene heterostructure can be greatly enhanced by gating and is several orders of magnitude higher than that in gated phosphorene.
Chlorophyll a fluorescence: a tool for the investigation of toxic effects in the photosynthetic apparatus.

W. Brack,H. Frank

DOI: https://doi.org/10.1006/EESA.1997.1639

IF: 7.129

1998-05-01

Ecotoxicology and Environmental Safety

Abstract:The effects of environmental pollutants, such as triazines, urea herbicides, phenols, nitro aromatic compounds, aldehydes, hydrogen sulfide, volatile halogenated aliphatic and aromatic compounds, and alkylbenzenes, the photosynthesis of green algae were investigated by using detailed analysis of chlorophyll a fluorescence. Application of quenching analysis by means of a pulse amplitude-modulated fluorometer allows the discrimination of different modes of action. Blocks of the electron-transport chain, the action of uncouplers, and fluorescence quenching by nitroaormatic compounds could be distinguished. Hydrogen sulfide and short-chain aldehydes seem to react in the same way, probably by reaction with components of the electron-transport chain. Nonreactive volatile compounds affect chlorophyll fluorescence in a strictly hydrophobicity-dependent manner. The quenching analysis suggests an inhibition of utilization of proton-motive force for ATP synthesis. Detailed analysis of fluorescence patterns may be of great help for identification of toxic pollutants and their sources.
A Self-Driven, Polarized-Liquid-based Ultraviolet Photodetector

Chang Liu,Yanghua Lu,Yi Zhang,Xutao Yu,Can Wang,Runjiang Shen,Shisheng Lin

DOI: https://doi.org/10.1016/j.xcrp.2022.101192

IF: 8.9

2022-01-01

Cell Reports Physical Science

Abstract:Traditionally, photodetectors are based on solid materials composed of P-N junctions, which require delicate growth technol-ogies. In this article, we demonstrate the feasibility of a polarized -liquid-triggered photodetector where the liquid is sandwiched between P-and N-type semiconductors. Under multiple cycles of optical switching, a transient photopolarized current, a steady-state photopolarized current, and a depolarized current are repeatably observed in a semiconductor/polar liquid/semiconductor structure. The responsivity and specific detectivity of the transient photopo-larized current in N-GaN/W/P-GaN reaches 104.2 mA/W and 4.4 3 10(12) Jones at 365 nm, 52.8 mA/W, and 1.9 3 10(12) Jones at 254 nm illumination under zero bias voltage. We anticipate that our research may be useful for integrating self-powered photodetectors with freely selectable wavelength bands.
A Self-Power Photodetector Based on Janus SnSSe–ZrSSe Lateral Heterojunction: A Theoretical Study

Hong Li,Xinqi Yuan,Fengbin Liu,Kang An,Jing Lu

DOI: https://doi.org/10.1016/j.physb.2023.415651

2024-01-01

Abstract:The photogalvanic effect (PGE) is attractive for self-powered photodetectors. We study the PGE of lateral Janus SnSSe-ZrSSe photodetectors using ab initio quantum transport simulations. Under the illumination of linearly polarized light, a globally enhanced PGE is found for the lateral SnSSe-ZrSSe photodetector compared to the ML SnSSe and ZrSSe photodetectors. The lateral SnSSe-ZrSSe photodetector exhibits better performance along the armchair direction than its counterpart along the zigzag direction, where a maximum PGE photocurrent of 34 a02/ photon at Eph = 5.0 eV and a high extinction ratio of 194 at Eph = 6.0 eV are acquired. Our study suggests that lateral SnSSe-ZrSSe is a promising candidate for ultraviolet photodetectors.
Largely Enhanced Photogalvanic Effects in a Phosphorene Photodetector by Strain-Increased Device Asymmetry

Juan Zhao,Yibin Hu,Yiqun Xie,Lei Zhang,Yin Wang

DOI: https://doi.org/10.1103/physrevapplied.14.064003

IF: 4.6

2020-12-01

Physical Review Applied

Abstract:The photogalvanic effect (PGE) occurring in noncentrosymmetric materials enables the generation of an open-circuit voltage that is much larger than the bandgap, making it rather attractive in solar cells. However, the magnitude of the PGE photocurrent is usually small, which severely hampers its practical application. Here we propose a mechanism to largely enhance the PGE photocurrent by mechanical strain based on the quantum transport simulations for the two-dimensional nickel-phosphorene-nickel photodetector. A broadband PGE photocurrent governed by the Cs noncentrosymmetry is generated at zero bias under the illumination of linearly polarized light. The photocurrent depends linearly on the device asymmetry, while nonlinearly on the optical absorption. By applying the appropriate mechanical tension stress on the phosphorene, the photocurrent can be substantially enhanced by up to 3 orders of magnitude, which is primarily ascribed to the largely increased device asymmetry. The change in the optical absorption in some cases can also play a critical role in tuning the photocurrent due to the nonlinear dependence. Moreover, the photocurrent can be even further enhanced by mechanical bending, mainly owing to the considerably enhanced device asymmetry. Our results reveal the dependence of the PGE photocurrent on the device asymmetry and absorption in the transport process through a device, and also explore the potential of the PGE in self-powered low-dimensional flexible optoelectronics and low-dimensional photodetections with high photoresponsivity.

physics, applied
Highly Polarization-Sensitive, Broadband, Self-Powered Photodetector Based on Graphene/PdSe2/Germanium Heterojunction.

Zhifeng Shi,Juan Du,C. Xia,Xin Jian Li,Yongtao Tian,Jiansheng Jie,Di Wu,Jiawen Guo,Longhui Zeng,Yongzhi Tian,Y. Tsang

DOI: https://doi.org/10.1021/acsnano.9b03994

IF: 17.1

2019-07-30

ACS Nano

Abstract:Polarization-sensitive photodetection in a broad spectrum range is highly desired due to the great significance in military and civilian applications. Palladium diselenide (PdSe2), a newly explored air-stable, group-10 two-dimensional (2D) noble metal dichalcogenide with a puckered pentagonal structure, holds promise for polarization-sensitive photodetection. Herein, we report a highly polarization-sensitive, broadband, self-powered photodetector based on graphene/PdSe2/germanium heterojunction. Owing to the enhanced light absorption of the mixed-dimensional van der Waals heterojunction and the effective carrier collection with graphene transparent electrode, the photodetector exhibits superior device performance in terms of a large photoresponsivity, a high specific detectivity, a fast response speed to follow nanosecond pulsed light signal and a broadband photosensitivity ranging from deep ultraviolet (DUV) to mid-infrared (MIR). Significantly, highly polarization-sensitive broadband photodetection with an ultrahigh polarization sensitivity of 112.2 is achieved, which represents the best result for 2D layered material-based photodetectors. Further, we demonstrated the high-resolution polarization imaging based on the heterojunction device. This work reveals the great potential of 2D PdSe2 for high-performance, air-stable, and polarization-sensitive broadband photodetectors.

Medicine,Materials Science,Engineering,Physics
Polarization‐Sensitive Self‐Powered Photodetector Based on Anisotropic/Isotropic ReS2/SnSe2 Van der Waals Heterojunction (Advanced Optical Materials 31/2024)

Ziyi Fu,Jiayue Han,Laijiang Wei,Yuchao Wei,Xianghu Huo,Chunyu Li,Jinling Xie,Hongxi Zhou,He Yu,Jun Gou,Zhiming Wu,Jun Wang

DOI: https://doi.org/10.1002/adom.202470101

IF: 9

2024-11-06

Advanced Optical Materials

Abstract:Polarization‐Sensitive Heterojunction Photodetector In article number 2401306, Ziyi Fu, Jiayue Han, Jun Wang, and co‐workers introduce a polarization‐sensitive photodetector based on the ReS2/SnSe2 heterojunction, detailing the material synthesis and device fabrication. This self‐powered detector demonstrates excellent optoelectronic and polarization detection performance. Additionally, its application in optical communication systems is validated. This research provides a novel and practical approach for developing energy‐efficient, high‐performance polarization‐sensitive detectors.

materials science, multidisciplinary,optics
Polarization- and Gate-Tunable Optoelectronic Reverse in 2D Semimetal/Semiconductor Photovoltaic Heterostructure.

Hanyu Wang,Yan Li,Peng Gao,Jina Wang,Xuefeng Meng,Yin Hu,Juehan Yang,Zihao Huang,Wei Gao,Zhaoqiang Zheng,Zhongming Wei,Jingbo Li,Nengjie Huo

DOI: https://doi.org/10.1002/adma.202309371

IF: 29.4

2024-01-01

Advanced Materials

Abstract:Polarimetric photodetector can acquire higher resolution and more surface information of imaging targets in complex environments due to the identification of light polarization. To date, the existing technologies yet sustain the poor polarization sensitivity (<10), far from market application requirement. Here, the photovoltaic detectors with polarization- and gate-tunable optoelectronic reverse phenomenon are developed based on semimetal 1T '-MoTe2 and ambipolar WSe2. The device exhibits gate-tunable reverse in rectifying and photovoltaic characters due to the directional inversion of energy band, yielding a wide range of current rectification ratio from 10(-2) to 10(3) and a clear object imaging with 100 x 100 pixels. Acting as a polarimetric photodetector, the polarization ratio (PR) value can reach a steady state value of approximate to 30, which is compelling among the state-of-the-art 2D-based polarized detectors. The sign reversal of polarization-sensitive photocurrent by varying the light polarization angles is also observed, that can enable the PR value with a potential to cover possible numbers (1 ->+infinity/-infinity ->-1). This work develops a photovoltaic detector with polarization- and gate-tunable optoelectronic reverse phenomenon, making a significant progress in polarimetric imaging and multifunction integration applications.
Linear and elliptical photogalvanic effects in two-dimensional Be2Al photodetector

Xi Fu,Guangyao Liang,Jian Lin,Wenhu Liao,Hui Zeng,Liming Li,Xiaowu Li

DOI: https://doi.org/10.1007/s10854-024-12877-x

2024-06-14

Journal of Materials Science Materials in Electronics

Abstract:The photogalvanic effect (PGE) enables the generation of photocurrent at zero bias and without the need of building p – n junction, showing potential applications in the low-power two-dimensional optoelectronics. However, the PGE photocurrent is generally small and high photocurrents are needed which can be used as the photodetector in practice. Therefore in this paper, we built two photodetectors, namely armchair and zigzag photodetectors, based on the Be 2 Al monolayer with its stabilization has been proved, and further studied linear and elliptical PGEs in these devices. It was found that when introducing the vacancy-doping and substitution-doping corresponding to the increasing of asymmetry from D 6 H to D 2 H or C 2 V for the Be 2 Al monolayer, the strength of PGE photocurrents have been considerably enlarged, showing robust PGEs generated in the armchair and zigzag Be 2 Al photodetectors. Moreover, the photocurrents mainly show the relations cos(2 θ ) for the armchair photodetector and sin(2 θ + θ 0 ) for the zigzag photodetector with their largest strength reaching up to 34.8 and 4.2 /photon, respectively. In addition, results revealed that the linear PGEs were stronger than the elliptical PGEs, and for the circularly polarized light the strength of photocurrents did not change anymore exhibiting the existence of isotropic PGEs. Finally, high extinction ratios exhibited that the armchair and zigzag Be 2 Al photodetectors were all polarization-sensitive. In conclude, these results manifested great potential applications of the Be 2 Al photodetectors on high-performance optoelectronics and nanoelectronic devices.

materials science, multidisciplinary,engineering, electrical & electronic,physics, applied, condensed matter
High-performance Polarization-Sensitive Photodetector Based on a Few-Layered PdSe 2 Nanosheet

Lingkai Cao

DOI: https://doi.org/10.1007/s12274-020-2804-y

IF: 9.9

2020-01-01

Nano Research

Abstract:The extraordinary optical and electronic properties of anisotropic two-dimensional materials, such as black phosphorus, ReS2, and GeSe, enable them a promising component of polarization-sensitive photodetectors. However, these applications are significantly limited by the challenges of air-stability, response time, and linearly dichroic ratio. Interestingly, palladium diselenide (PdSe2) with high air stability is an emerging material that has robust in-plane anisotropy induced by its asymmetric pentagonal lattice structure. We have successfully prepared a few-layer PdSe2 using micromechanical exfoliation, and here we demonstrate the strong linear dichroism behavior of PdSe2 by polarization-resolved absorption spectra measurements. Such unique linear dichroism, endows the PdSe2 photodetector powerful ability to detect polarized light. The photodetector based on 5L PdSe2, as tested with polarization-dependent photocurrent mapping, exhibited competitive capability to detect polarized light, achieving a significant photocurrent on/off ratio (> 102), the quite fast response time (< 11 ms) and robust linearly dichroic ratios (/max//min ≈ 1.9 at 532 nm). These results are essential advance in the development of polarization-sensitive photodetector, a crucial step towards opening up a new avenue for the application of 2D optoelectronic devices.
Enhanced photogalvanic effect in Janus PtSSe-HfSSe lateral heterojunctions

Hong Li,Jiahui Li,Fengbin Liu,Kang An,Jing Lu

DOI: https://doi.org/10.1016/j.nxmate.2024.100116

2024-07-01

Next Materials

Abstract:The enhancement of photogalvanic effect (PGE) is vital for the application of optoelectronics. We use the ab initio quantum transport method to study the possible enhancement of PGE by importing a lateral PtSSe-HfSSe heterojunction. Under irradiation of linearly polarized light with photon energies (E ph) of 0.8–6.2 eV, the overall increase ratio of the PGE photocurrent is over 20/50 along the armchair/zigzag direction. The lateral PtSSe-HfSSe photodetector along the armchair direction exhibits a better photon response than the photodetector along the zigzag direction. The maximal PGE photocurrent is 42.26 a0 2/photon at E ph = 2.0 eV, and the highest extinction ratio is 2.5 × 104 at E ph = 1.6 eV. Our study indicates that the lateral PtSSe-HfSSe heterojunction is a favorable candidate for optoelectronics.
A promising polarization-sensitive ultraviolet photodetector based on the two-dimensional ZrNBr-ZrNCl lateral heterojunction with enhanced photoresponse: A theoretical prediction

Yanmei Zhang,Ronggen Cao,Yibin Hu,Yin Wang,Yiqun Xie

DOI: https://doi.org/10.1016/j.apsusc.2021.149907

IF: 6.7

2021-09-01

Applied Surface Science

Abstract:Photogalvanic effect (PGE) enables a self-powered and highly polarization-sensitive ultraviolet photodetection (UV-PHD), however the photocurrent generated in the PGE is usually small, leading to a lower photoresponsivity. Here, using quantum transport simulations, we propose a self-powered UV photodetector composed of the two-dimensional lateral ZrNBr-ZrNCl heterojunction. Robust PGE photocurrent is generated in a broad UV range from 3.5 to 6.5 eV at zero bias due to the noncentrosymmetry of the photodetector. The photocurrent is enhanced by up to 3 orders of magnitude, as compared to that in the monolayer ZrNBr and ZrNCl, and moreover, a good polarization sensitivity is obtained with an extinction ratio of up to 5.0. Our result propose that the PGE photocurrent can be effectively enhanced by an appropriate lateral heterojunction, and shows a promising application of the lateral ZrNBr-ZrNCl heterojunction in the self-powered and polarization-sensitive UV-PHD.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Effective Self-Power Photodetector Based on Photogalvanic Effect: A Case Study for Janus MoSSe-CrSSe Lateral Heterojunction

Qiaohui Wang,Hong Li,Kang An,Fengbin Liu,Jing Lu

DOI: https://doi.org/10.1142/s0217984924503573

2024-01-01

Modern Physics Letters B

Abstract:The photogalvanic effect (PGE) can produce a photocurrent independent of a p–n junction or bias voltage, but the resulting photocurrent is usually very small. An appropriate lateral heterojunction can effectively enhance PGE. Here, we studied the PGE of a monolayer (ML) Janus MoSSe-CrSSe lateral heterojunction through ab initio quantum transport simulation. Compared with that of a homogeneous material, PGE is enhanced due to the reduced symmetry of the lateral heterojunction, and the maximum increase ratio in the photocurrent is more than two orders of magnitude greater than that of the homogeneous ML MoSSe and CrSSe photodetectors. A peak maximum photocurrent of 13.85 a[Formula: see text]/photon and high polarization sensitivity with a maximum extinction ratio of 308 are obtained for the ML MoSSe-CrSSe lateral heterojunction. These favorable properties indicate that the MoSSe-CrSSe lateral heterojunction is a promising candidate for photodetectors.
Air-Stable GaSe/ReS 2 Heterojunctions for Self-Powered Polarization-Sensitive Photodetectors

Sufeng Quan,Shuai Guo,Dieter Weller,Shiyou Fu,Yingying Wang,Ruibin Liu

DOI: https://doi.org/10.1021/acsanm.2c01303

IF: 6.14

2022-04-28

ACS Applied Nano Materials

Abstract:The problem of energy shortage and environmental pollution is becoming remarkably important and has attracted much attention. Driven by this situation, self-powered devices are highly desirable in all areas. Herein, a broadband photoresponse, self-powered, polarization-sensitive photodetector based on stacked two-dimensional type-II GaSe/ReS2 heterostructures is demonstrated. Because of the formation of the type-II band alignment, GaSe/ReS2 heterostructures display a self-powered photoresponse with an I on/I off ratio of about 8.3 × 102 and exhibit a high responsivity of 54 mA/W under illumination with 532 nm laser light. A maximum photoresponsivity of 170 mA/W and an external quantum efficiency of 10% can be achieved by illumination with a 340 nm laser. Additionally, benefiting from the highly in-plane anisotropic atomic arrangements of ReS2, the photodetector shows a polarization-sensitive photocurrent. The dichroic ratio and polarization sensitivity are determined to be 1.73 and 3.03, respectively, and the highest photoresponsivity of the photodetector can reach up to 94 mA/W when the direction of the incident polarized laser is parallel to the b-axis of ReS2. Importantly, the self-passivating behavior of GaSe can maintain the performance of the heterojunction for 1 week. The present findings open new opportunities for developing air-stable, high-performance van der Waals heterostructure photodetectors.

materials science, multidisciplinary,nanoscience & nanotechnology
Infrared Photodetectors: Extrinsic Photoconduction Induced Short‐Wavelength Infrared Photodetectors Based on Ge‐Based Chalcogenides (Small 4/2021)

Ting He,Zhen Wang,Ruyue Cao,Qing Li,Meng Peng,Runzhang Xie,Yan Huang,Yang Wang,Jiafu Ye,Peisong Wu,Fang Zhong,Tengfei Xu,Hailu Wang,Zhuangzhuang Cui,Qinghua Zhang,Lin Gu,Hui‐Xiong Deng,He Zhu,Chongxin Shan,Zhongming Wei,Weida Hu

DOI: https://doi.org/10.1002/smll.202170013

IF: 13.3

2021-01-01

Small

Abstract:The cover shows the extrinsic photoconduction induced Ge‐based polarization‐sensitive photodetector. The structure of the Ge‐based photodetector is shown in the upper left corner. The amplified crystal structure of GeSe with several Ge vacancies is shown in the middle. Additionally, the image of excess carriers being excited by a polarized light is shown in the lower right corner. In article number <a href="https://doi.org/10.1002/smll.202006765">2006765</a>, Qing Li, Zhongming Wei, Weida Hu, and co‐workers investigate the extrinsic photoconduction effect in 2D materials for the first time and provide a strategy to broaden the detection waveband of photodetectors. 

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Perpendicularly Reversed Polarization Sensitivity of Double-faced Photodetection based on Sb2Se3 Microbelt

Peng Wan,Mingming Jiang,Longxing Su,Sihao Xia,Yun Wei,Tong Xu,Yang Liu,Daning Shi,Xiaosheng Fang,Caixia Kan

DOI: https://doi.org/10.1002/adfm.202207688

IF: 19

2022-01-01

Advanced Functional Materials

Abstract:Low-dimensional polarization-sensitive photodetectors have captured ever-increasing attention due to their unique applications in navigation, optical switching, and communication. However, to date, the study of dimensionality-dependent polarization-sensitive photodetectors has not received much attention. Herein, a double-faced polarization-sensitive photodetector based on an individual high-quality Sb2Se3 microbelt is proposed, where both the wide and narrow side facets serve as irradiation targets. Polarization-sensitive measurements reveal the anisotropy in the photocurrents recorded parallel and perpendicular to the long axis of the Sb2Se3 microbelt. Strikingly, the single Sb2Se3 microbelt photodetector reveals the obvious perpendicular reversal with a 90 degrees angle on polarization sensitivity from the wide surface to the narrow surface. With decreasing inclination angle, the anisotropic ratio varies from 1.18 to 0.87 gradually. Interestingly, the photodetector can lose its polarization sensitivity at a particular inclination angle. Angle-resolved polarized Raman spectroscopy confirms the asymmetry and anisotropic character of the Sb2Se3 microbelt. The polarization sensitivity of the Sb2Se3 microbelt photodetectors originates from the optical anisotropy induced by the crystal structure anisotropy, rather than one-dimensional geometry morphological anisotropy. The use of an anisotropic Sb2Se3 microbelt in double-faced polarization-sensitive photodetection may contribute to new functionality in innovative optoelectronic applications.
Perpendicularly Reversed Polarization Sensitivity of Double‐faced Photodetection based on Sb2Se3 Microbelt

Peng Wan,Mingming Jiang,Longxing Su,Sihao Xia,Yun Wei,Tong Xu,Yang Liu,Daning Shi,Xiaosheng Fang,Caixia Kan

DOI: https://doi.org/10.1002/adfm.202207688

IF: 19

2022-08-30

Advanced Functional Materials

Abstract:Double‐faced polarization‐sensitive photodetectors based on individual high‐quality Sb2Se3 microbelt are proposed, where both the wide and narrow side facets serve as irradiation targets. The photodetector reveals the obvious perpendicular reversal with a 90° angle on polarization sensitivity, which originates from the optical anisotropy induced by the crystal structure anisotropy. Low‐dimensional polarization‐sensitive photodetectors have captured ever‐increasing attention due to their unique applications in navigation, optical switching, and communication. However, to date, the study of dimensionality‐dependent polarization‐sensitive photodetectors has not received much attention. Herein, a double‐faced polarization‐sensitive photodetector based on an individual high‐quality Sb2Se3 microbelt is proposed, where both the wide and narrow side facets serve as irradiation targets. Polarization‐sensitive measurements reveal the anisotropy in the photocurrents recorded parallel and perpendicular to the long axis of the Sb2Se3 microbelt. Strikingly, the single Sb2Se3 microbelt photodetector reveals the obvious perpendicular reversal with a 90° angle on polarization sensitivity from the wide surface to the narrow surface. With decreasing inclination angle, the anisotropic ratio varies from 1.18 to 0.87 gradually. Interestingly, the photodetector can lose its polarization sensitivity at a particular inclination angle. Angle‐resolved polarized Raman spectroscopy confirms the asymmetry and anisotropic character of the Sb2Se3 microbelt. The polarization sensitivity of the Sb2Se3 microbelt photodetectors originates from the optical anisotropy induced by the crystal structure anisotropy, rather than one‐dimensional geometry morphological anisotropy. The use of an anisotropic Sb2Se3 microbelt in double‐faced polarization‐sensitive photodetection may contribute to new functionality in innovative optoelectronic applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Polarization-Resolved Near-Infrared PdSe2 P-I-n Homojunction Photodetector.

Jiayang Jiang,Weiting Xu,Fuqiang Guo,Shengxue Yang,Weikun Ge,Bo Shen,Ning Tang

DOI: https://doi.org/10.1021/acs.nanolett.3c03086

IF: 10.8

2023-01-01

Nano Letters

Abstract:Constructing high-quality homojunctions plays a pivotal role for the advancement of two-dimensional transition metal sulfide (TMDC) based optoelectronic devices. Here, a lateral PdSe2 p-i-n homojunction is constructed by electrostatic doping. Electrical measurements reveal that the homojunction diode exhibits a strong rectifying characteristic with a rectification ratio exceeding 104 and an ideality factor approaching 1. When functioning in photovoltaic mode, the device achieves a high responsivity of 1.1 A/W under 1064 nm illumination, with a specific detectivity of 1.3 × 1011 Jones and a high linearity of 45 dB. Benefiting from the lateral p-i-n structure, the junction capacitance is significantly reduced, and an ultrafast response (3/6 μs) is obtained. Additionally, the photodiode has the capability of polarization distinction due to the unique in-plane anisotropic structure of PdSe2, exhibiting a dichroic ratio of 1.6 at a 1064 nm wavelength. This high-performance polarization-sensitive near-infrared photodetector exhibits great potential in the next-generation optoelectronic applications.
High Performance Polarization-Sensitive Self-Powered Imaging Photodetectors Based on a P-Te/n-mose2 Van Der Waals Heterojunction with Strong Interlayer Transition.

Qixiao Zhao,Feng Gao,Hongyu Chen,Wei Gao,Mengjia Xia,Yuan Pan,Hongyan Shi,Shichen Su,Xiaosheng Fang,Jingbo Li

DOI: https://doi.org/10.1039/d1mh01287h

IF: 13.3

2021-01-01

Materials Horizons

Abstract:In-plane anisotropic two-dimensional (2D) materials offer great opportunities for developing novel polarization sensitive photodetectors without being in conjunction with filters and polarizers. However, owing to low linear dichroism ratio and insufficient optical absorption of the few layer 2D materials, the comprehensive performance of the present polarization sensitive photodetectors based on 2D materials is still lower than the practical application requirements. In this work, after systematic investigation of the structural, vibrational, and optical anisotropies of layer-structured Te nanosheets, a novel polarization-sensitive self-powered imaging photodetector with high comprehensive performance based on a p-Te/n-MoSe2 van der Waals heterojunction (vdWH) with strong interlayer transition is proposed. Owing to the high rectification ratio (104) of the diode, the device shows excellent photovoltaic characteristics. As examples, the photodetectors exhibited an ultrahigh on/off ratio of 105 at a relatively weak light intensity (4.73 mw cm-2), and the highest responsivity of the device could reach 2106 mA W-1 without any power supply. In particular, benefitting from the excellent dichroism properties of Te nanosheets synthesized in this work, the anisotropic ratio of the photocurrent (Imax/Imin) could reach as high as 16.39 (405 nm, 24.2 mw cm-2). This value obtained under zero bias voltage is much greater than that of present 2D material photodetectors even at a bias voltage. In addition, the highest detectivity is 2.91 × 1013 Jones at a low bias voltage of -0.08 V. This work provides a novel building block for high resolution polarization-sensitive photodetection of weak signals in complex environments.
Progress and Perspective of Polarization-Sensitive Perovskite Photodetectors

Hongxu Chen,Guohua Wang,Yufei Wang,Xin Zhao,Xinglu Xu,Luxin Zhang,Wei Wei,Liang Shen

DOI: https://doi.org/10.1039/d4ta07010k

IF: 11.9

2024-11-28

Journal of Materials Chemistry A

Abstract:Polarization-sensitive photodetectors can present polarization information as electrical signals. They provide increasingly extensive applications in remote sensing imaging, environmental monitoring and medical detection for their multi-dimensional detection of light-based information transfer. In order to cope with the complex detection environment and obtain excellent detection performance, polarization-sensitive photodetectors based on advanced semiconductor materials have received extensive attention. Perovskite is promosing as a novel candidate with excellent optoelectronic properties and the variability, which makes it possible to solve various problems of traditional polarization-sensitive photodetectors. In recent years, various perovskite polarization-sensitive photodetectors with high photocurrent, high sensitivity and fast response have been reported continuously. Herein, the research status in the field of perovskite polarization-sensitive photodetectors, including linearly and circularly polarized photodetectors, is comprehensively reviewed. From the perspective of crystal structure, macroscopic morphology and physical effects of perovskite, we sort out the design principles and analyze the device performance in detail. Furthermore, we point out the problems in the field and propose the prospect of future development.

materials science, multidisciplinary,chemistry, physical,energy & fuels

Edge-dependent photogalvanic effect in 1T′-ReS_2-based polarization self-powered photodetectors

Self-powered Photogalvanic Phosphorene Photodetectors with High Polarization Sensitivity and Suppressed Dark Current.

Chlorophyll a fluorescence: a tool for the investigation of toxic effects in the photosynthetic apparatus.

A Self-Driven, Polarized-Liquid-based Ultraviolet Photodetector

A Self-Power Photodetector Based on Janus SnSSe–ZrSSe Lateral Heterojunction: A Theoretical Study

Largely Enhanced Photogalvanic Effects in a Phosphorene Photodetector by Strain-Increased Device Asymmetry

Highly Polarization-Sensitive, Broadband, Self-Powered Photodetector Based on Graphene/PdSe2/Germanium Heterojunction.

Polarization‐Sensitive Self‐Powered Photodetector Based on Anisotropic/Isotropic ReS2/SnSe2 Van der Waals Heterojunction (Advanced Optical Materials 31/2024)

Polarization- and Gate-Tunable Optoelectronic Reverse in 2D Semimetal/Semiconductor Photovoltaic Heterostructure.

Linear and elliptical photogalvanic effects in two-dimensional Be2Al photodetector

High-performance Polarization-Sensitive Photodetector Based on a Few-Layered PdSe 2 Nanosheet

Enhanced photogalvanic effect in Janus PtSSe-HfSSe lateral heterojunctions

A promising polarization-sensitive ultraviolet photodetector based on the two-dimensional ZrNBr-ZrNCl lateral heterojunction with enhanced photoresponse: A theoretical prediction

Effective Self-Power Photodetector Based on Photogalvanic Effect: A Case Study for Janus MoSSe-CrSSe Lateral Heterojunction

Air-Stable GaSe/ReS 2 Heterojunctions for Self-Powered Polarization-Sensitive Photodetectors

Infrared Photodetectors: Extrinsic Photoconduction Induced Short‐Wavelength Infrared Photodetectors Based on Ge‐Based Chalcogenides (Small 4/2021)

Perpendicularly Reversed Polarization Sensitivity of Double-faced Photodetection based on Sb<sub>2</sub>Se<sub>3</sub> Microbelt

Perpendicularly Reversed Polarization Sensitivity of Double‐faced Photodetection based on Sb2Se3 Microbelt

Polarization-Resolved Near-Infrared PdSe2 P-I-n Homojunction Photodetector.

High Performance Polarization-Sensitive Self-Powered Imaging Photodetectors Based on a P-Te/n-mose2 Van Der Waals Heterojunction with Strong Interlayer Transition.

Progress and Perspective of Polarization-Sensitive Perovskite Photodetectors