A Bifunctional Memristor Enables Multiple Neuromorphic Computing Applications

Nikolay Lyapunov,Xiao Dong Zheng,Kevin Yang,Hao Min Liu,Kai Zhou,Song Hua Cai,Tsz Lung Ho,Chun Hung Suen,Ming Yang,Jiong Zhao,Xiaoyuan Zhou,Ji‐Yan Dai

DOI: https://doi.org/10.1002/aelm.202101235

IF: 6.2

2022-03-11

Advanced Electronic Materials

Abstract:Advanced Electronic Materials, EarlyView.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology

What problem does this paper attempt to address?

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

Xiangyu Zeng,Liang Zhang,Jiaqi Peng,Qikai Ye,Boyang Ma,Hongsheng Xu,Yulu Liu,Nazifi Sani Shuaibu,Xiaozhi Wang,Yixiu Wang,Yan Liu,Yue Hao,Genquan Han

DOI: https://doi.org/10.1063/5.0170984

IF: 4

2023-01-01

Applied Physics Letters

Abstract:Emerging intelligence applications, such as brain-inspired and in-memory computing, require memory with faster read/write speeds, higher integration, and lower energy consumption. To tackle these challenges, memristors, a type of synaptic device, are considered ideal candidates due to their potential for emulating biological synaptic connections. In this study, a two-dimensional (2D) heterostructure of tellurene/Nb-doped MoS2 (MoS2:Nb) was used as the resistive switching layer to fabricate memristors. By varying the maximum working voltage, the fabricated device can switch between one and two-memory windows, which can be used to imitate the postsynaptic inhibition effect. This is attributed to the competition between the drift and diffusion of the S vacancy in the MoS2:Nb layer, which can modulate the contact Schottky barrier in the material interfaces. Furthermore, biological synapse effects, such as long-term depression and long-term potentiation, can be well mimicked by applying several voltage pulses to the device with good repeatability. This study advances the device physics for understanding the physical working mechanism of the 2D memristor, which can benefit the realization of bio-realistic neuromorphic computing systems based on such memristors.
A Brain-Inspired In-Memory Computing System for Neuronal Communication Via Memristive Circuits.

Xiaoyue Ji,Zhekang Dong,Chun Sing Lai,Donglian Qi

DOI: https://doi.org/10.1109/mcom.001.21664

IF: 9.03

2022-01-01

IEEE Communications Magazine

Abstract:Brain-inspired approaches can efficiently analyze the activities of biological neural networks and solve computationally hard problems with energy efficiencies unattainable with von Neumann architectures, indicating a significant improvement in the understanding of neuronal communications and functionalities. Here, we present a brain-inspired multimodal signal processing system with organic memristor arrays that can potentially integrate the signal sensory, storage, and computation. To facilitate the multimodal signal processing system design, we used four components. First, we present a multimodal signal sensory module mainly responsible for multimodal (iconic, echoic, olfactory, muscular, and gustatory) signal collection, fusion, and storage. Second, a high-density cross-point memristive synapse array is constructed after fabrication of the albumin protein memristor to realize the dense connectivity between layers of computing, data storage, and communication. Third, considering the structure and function of the brain region, we demonstrate a general learning module for hierarchy learning, which can recognize and imagine multimodal information. Finally, the necessary peripheral circuit module (consisting of winnerless competition function circuit, analog-to-digital converter, digital-to-analog converter, pulse modulator, etc.) is designed. Notably, our system can capture massive amounts of data every second and perform in situ processing of multimodal signals. This study is expected to help achieve the deep integration of nano materials into neuromorphic computing systems and energy-efficient integrated circuits.
Design and Implementation of a Flexible Neuromorphic Computing System for Affective Communication Via Memristive Circuits

Zhekang Dong,Xiaoyue Ji,Chun Sing Lai,Donglian Qi

DOI: https://doi.org/10.1109/mcom.001.2200272

IF: 9.03

2023-01-01

IEEE Communications Magazine

Abstract:Neuromorphic computing is expected to realize fast and energy-efficient artificial neural networks and address the inherent limitations of von Neumann architectures in dedicated communication applications. To realize this vision, we identify the existing challenges in neuromorphic computing and provide a specific solution from the perspectives of device, circuit, and system. At the device level, we fabricate a metal-oxide-based memristor with high stability, low power, and good scalability, serving as the fundamental component of a neuromorphic computing system. At the circuit level, the basic circuit units and necessary peripheral circuits are designed to realize efficient vector-matrix multiplication and different functions, including nonlinear activation operation, subtraction operation, added operation, and so on. At the system level, a flexible neuromorphic computing system with a hardware-friendly training approach is proposed, which can perform effective communication with good trade-off between accuracy and time consumption. This study is expected to achieve the deep integration of nanotechnology, energy-efficient integrated circuits, and neuromorphic computing systems into communication applications.
Multitasking Memristor for High Performance and Ultralow Power Artificial Synaptic Device Application

Ni Yang,Ji Zhang,Jing-Kai Huang,Yang Liu,Junjie Shi,Qianli Si,Jack Yang,Sean Li

DOI: https://doi.org/10.1021/acsaelm.2c00663

IF: 4.494

2022-01-01

ACS Applied Electronic Materials

Abstract:The emergence of in-memory computing has shed light on solving high-power consumption and low computation efficiency of the traditional computers built with von Neumann architecture. Memristor, which exhibits history-dependent conductivity modulation, can simulate the synaptic behaviors in the biological brain. However, it remains as a key challenge to fabricate devices that can demonstrate a wide range of synaptic plasticity and maintain stable switching responses over repetitive operating cycles. Hereby, the memristor made of Au/Ti/TiO2/Nb:SrTiO3 (Nb:STO) heterojunction shows a partial nonvolatile bipolar resistive switching behavior with an initial high on/off switching ratio of similar to 10(4), and "writing" and "erasing" with long endurance across 1.5 x 10(4) cycles. Furthermore, we experimentally developed a single device that possesses a 5-bits (32states) reservoir computing system to recognize the binary patterns. We also demonstrated the multidata storage for neuromorphic computing in a 10 x 10 neuromorphic array to recognize the patterns of multilevel resistance states with an ultralow operation power of 4.1 pJ. In addition, various synaptic dependent plasticity performances, including spike-duration, -interval, and -number dependent plasticity, have been realized. Such an on-demand neuromorphic device exhibits a multitask shifting potential for analog bipolar memory and bistate and multistate neuromorphic networks and paves a way to develop the highly efficient memristor devices.
Versatile Cu2ZnSnS4-based synaptic memristor for multi-field-regulated neuromorphic applications

Xiaofei Dong,Hao Sun,Siyuan Li,Xiang Zhang,Jiangtao Chen,Xuqiang Zhang,Yun Zhao,Yan Li

DOI: https://doi.org/10.1063/5.0206100

IF: 4.304

2024-04-15

The Journal of Chemical Physics

Abstract:Integrating both electrical and light-modulated multi-type neuromorphic functions in a single synaptic memristive device holds the most potential for realizing next-generation neuromorphic systems, but is still challenging yet achievable. Herein, a simple bi-terminal optoelectronic synaptic memristor is newly proposed based on kesterite Cu2ZnSnS4, exhibiting stable nonvolatile resistive switching with excellent spatial uniformity and unique optoelectronic synaptic behaviors. The device demonstrates not only low switching voltage (−0.39 ± 0.08 V), concentrated Set/Reset voltage distribution (<0.08/0.15 V), and long retention time (>104 s) but also continuously modulable conductance by both electric (different width/interval/amplitude) and light (470–808 nm with different intensity) stimulus. These advantages make the device good electrically and optically simulated synaptic functions, including excitatory and inhibitory, paired-pulsed facilitation, short-/long-term plasticity, spike-timing-dependent plasticity, and “memory-forgetting” behavior. Significantly, decimal arithmetic calculation (addition, subtraction, and commutative law) is realized based on the linear conductance regulation, and high precision pattern recognition (>88%) is well achieved with an artificial neural network constructed by 5 × 5 × 4 memristor array. Predictably, such kesterite-based optoelectronic memristors can greatly open the possibility of realizing multi-functional neuromorphic systems.

chemistry, physical,physics, atomic, molecular & chemical
CMOS Back-End Compatible Memristors for in Situ Digital and Neuromorphic Computing Applications.

Zhen-Yu He,Tian-Yu Wang,Jia-Lin Meng,Hao Zhu,Li Ji,Qing-Qing Sun,Lin Chen,David Wei Zhang

DOI: https://doi.org/10.1039/d1mh01257f

IF: 13.3

2021-01-01

Materials Horizons

Abstract:In-memory logic calculations and brain-inspired artificial synaptic neuromorphic computing are expected to solve the limitations of the traditional von Neumann computing architecture. The data processing efficiency of the traditional von Neumann architecture is inherently limited by its physically separated processing and storage units, and thus data transmission besides calculation leads to a limited calculation speed and additional high-power consumption. In addition, traditional digital logic calculations and analog calculations have greater limitations in conversion. Herein, we report a flexible two-terminal memristor based on SiCO:H, which is a porous low-k back-end complementary metal-oxide-semiconductor (CMOS)-compatible material. Due to its low operating voltage (200 mV) and fast response speed (100 ns), it could perform digital memory calculation and neuromorphic calculation simultaneously. The memristor could realize a transition from short-term to long-term plasticity in the process of enhancement and inhibition during neuromorphic calculation, with high biological reality. In digital logic calculations, IMP-based and MAGIC-based logic calculations were verified. In neuromorphic computing, an Ag ion-based conductive filament was introduced. The relationship between the temporal dynamics of the conductance evolution and the diffusive dynamics of the Ag active metal could be modulated by the external programming electric field strength. The synapses and neuron dynamics in biology were faithfully simulated, realizing a transition from short-term to long-term plasticity in the process of enhancement and inhibition, which has high compatibility and scalability, proposing a novel solution for the next generation of computer architectures.
Reconfigurable Ag/HfO2/NiO/Pt Memristors with Stable Synchronous Synaptic and Neuronal Functions for Renewable Homogeneous Neuromorphic Computing System

Jiaqi Chen,Xingqiang Liu,Chang Liu,Lin Tang,Tong Bu,Bei Jiang,Yahui Qing,Yulu Xie,Yong Wang,Yongtao Shan,Ruxin Li,Cong Ye,Lei Liao

DOI: https://doi.org/10.1021/acs.nanolett.4c01319

IF: 10.8

2024-01-01

Nano Letters

Abstract:Artificial synapses and bionic neurons offer great potential in highly efficient computing paradigms. However, complex requirements for specific electronic devices in neuromorphic computing have made memristors face the challenge of process simplification and universality. Herein, reconfigurable Ag/HfO2/NiO/Pt memristors are designed for feasible switching between volatile and nonvolatile modes by compliance current controlled Ag filaments, which enables stable and reconfigurable synaptic and neuronal functions. A neuromorphic computing system effectively replicates the biological synaptic weight alteration and continuously accomplishes excitation and reset of artificial neurons, which consist of bionic synapses and artificial neurons based on isotype Ag/HfO2/NiO/Pt memristors. This reconfigurable electrical performance of the Ag/HfO2/NiO/Pt memristors takes advantage of simplified hardware design and delivers integrated circuits with high density, which exhibits great potency for future neural networks.
Versatile NbOx‐Based Volatile Memristor for Artificial Intelligent Applications

Dongyeol Ju,Sungjun Kim

DOI: https://doi.org/10.1002/adfm.202409436

IF: 19

2024-09-04

Advanced Functional Materials

Abstract:This study investigates the adaptation of multifunctional behaviors within a single memristor to enhance its effectiveness for future applications. By utilizing the uniform analog gradual switching functions of the Ti/NbOx/Pt memristor, it demonstrates the implementation of artificial synapses and nociceptors, emulation of synapse firing, synapse arrays, Pavlovian associative learning, and edge and reservoir computing within a single device. To achieve cost‐effectiveness, researchers are exploring various memristors for their adaptation in neuromorphic computing. Recent studies have focused on developing versatile functioning singular memristors, such as those involved in on‐receptor computing, which integrates sensory functions into current neuromorphic computing paradigms. Additionally, adaptations like reservoir computing are being investigated for computing systems. In this study, a memristor composed of a stack of Ti/NbOx/Pt layers is fabricated to explore multifunctional behaviors within a single memristor. By applying bias toward the top Ti electrode, gradual current changes with volatile features are demonstrated, revealing an ion‐migration‐based nonfilamentary switching memristor. Leveraging this volatile functionality, an artificial nociceptor is first implemented, demonstrating key functions of biological nociceptors including thresholding, relaxation, no‐adaptation, and sensitization. Subsequently, synapse emulation akin to the biological brain is achieved through easy conductance potentiation and depression with diverse synapse functions, enabling the memristor to mimic learning activities with spike firing. Lastly, computational applications are explored by adapting edge computing and multi‐bit reservoir computing, expanding the memristor's applications across diverse fields with versatile behaviors.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Diverse long-term potentiation and depression based on multilevel LiSiOx memristor for neuromorphic computing

Zeyu Wu,Zewen Li,Xin Lin,Xin Shan,Gang Chen,Chen Yang,Xuanyu Zhao,Zheng Sun,Kai Hu,Fang Wang,Tianling Ren,Zhitang Song,Kailiang Zhang,Tian-Ling Ren,Z. T. Song

DOI: https://doi.org/10.1088/1361-6528/acf0c8

IF: 3.5

2023-08-18

Nanotechnology

Abstract:Memristor-based neuromorphic computing is expected to overcome the bottleneck of von Neumann architecture. An artificial synaptic device with continuous conductance variation is essential for implementing bioinspired neuromorphic systems. In this work, a memristor based on Pt/LiSiOx/TiN structure is developed to emulate an artificial synapse, which shows non-volatile multilevel resistance state Memristor-based neuromorphic computing is expected to overcome the bottleneck of von Neumann architecture. An artificial synaptic device with continuous conductance variation is essential for implementing bioinspired neuromorphic systems. In this work, a memristor based on Pt/LiSiOx/TiN structure is developed to emulate an artificial synapse, which shows non-volatile multilevel resistance state memory behavior. Moreover, the high nonlinearity caused by abrupt changes in the set process is optimized by adjusting the initial resistance. 100 levels of continuously modulated conductance states are achieved and the nonlinearity factors are reduced to 1.31. The significant improvement is attributed to the decrease in the Schottky barrier height (SBH) and the evolution of the conductive filaments. Finally, due to the improved linearity of the long-term potentiation/long-term depression (LTP/LTD) behaviors in LiSiOx memristor, a robust recognition rate (~94.58%) is achieved for pattern recognition with the modified National Institute of Standards and Technology (MNIST) handwriting database. The Pt/LiSiOx/TiN memristor shows significant potential in high performance multilevel data storage and neuromorphic computing systems.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Reconfigurable Ag/HfO 2 /NiO/Pt Memristors with Stable Synchronous Synaptic and Neuronal Functions for Renewable Homogeneous Neuromorphic Computing System

Jiaqi Chen,Xingqiang Liu,Chang Liu,Lin Tang,Tong Bu,Bei Jiang,Yahui Qing,Yulu Xie,Yong Wang,Yongtao Shan,Ruxin Li,Cong Ye,Lei Liao

DOI: https://doi.org/10.1021/acs.nanolett.4c01319

IF: 10.8

2024-04-24

Nano Letters

Abstract:Artificial synapses and bionic neurons offer great potential in highly efficient computing paradigms. However, complex requirements for specific electronic devices in neuromorphic computing have made memristors face the challenge of process simplification and universality. Herein, reconfigurable Ag/HfO(2)/NiO/Pt memristors are designed for feasible switching between volatile and nonvolatile modes by compliance current controlled Ag filaments, which enables stable and reconfigurable synaptic and...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Self-rectifying-based Memristors for Neuromorphic Computing.

Wen Huang,Pengjie Hang,Deren Yang,Xuegong Yu,Xing'ao Li

DOI: https://doi.org/10.1016/j.scib.2022.05.008

IF: 18.9

2022-01-01

Science Bulletin

Abstract:Considering the challenges arising from the von Neumann bot-tleneck and the end of Moore's law,people have been seeking for new ways for future computing[1].The human brain is a highly parallel and low-energy-consumption computing system and cap-able of implementing complicated cognitive tasks[2].Inspired by the human brain architecture,neuromorphic computing that essentially simulates the operation of human brains has been pro-posed for future computing,and it can be physically realized by constructing memristive arrays[3].
Diverse Long-Term Potentiation and Depression Based on Multilevel LiSiOxmemristor for Neuromorphic Computing.

Zeyu Wu,Zewen Li,Xin Lin,Xin Shan,Gang Chen,Chen Yang,Xuanyu Zhao,Zheng Sun,Kai Hu,Fang Wang,Tianling Ren,Zhitang Song,Kailiang Zhang

DOI: https://doi.org/10.1088/1361-6528/acf0c8

IF: 3.5

2023-01-01

Nanotechnology

Abstract:Memristor-based neuromorphic computing is expected to overcome the bottleneck of von Neumann architecture. An artificial synaptic device with continuous conductance variation is essential for implementing bioinspired neuromorphic systems. In this work, a memristor based on Pt/LiSiOx/TiN structure is developed to emulate an artificial synapse, which shows non-volatile multilevel resistance state memory behavior. Moreover, the high nonlinearity caused by abrupt changes in the set process is optimized by adjusting the initial resistance. 100 levels of continuously modulated conductance states are achieved and the nonlinearity factors are reduced to 1.31. The significant improvement is attributed to the decrease in the Schottky barrier height and the evolution of the conductive filaments. Finally, due to the improved linearity of the long-term potentiation/long-term depression behaviors in LiSiOxmemristor, a robust recognition rate (∼94.58%) is achieved for pattern recognition with the modified National Institute of Standards and Technology handwriting database. The Pt/LiSiOx/TiN memristor shows significant potential in high-performance multilevel data storage and neuromorphic computing systems.
Controlled Memory and Threshold Switching Behaviors in a Heterogeneous Memristor for Neuromorphic Computing

Hao‐Yang Li,Xiao‐Di Huang,Jun‐Hui Yuan,Yi‐Fan Lu,Tian‐Qing Wan,Yi Li,Kan‐Hao Xue,Yu‐Hui He,Ming Xu,Hao Tong,Xiang‐Shui Miao

DOI: https://doi.org/10.1002/aelm.202000309

IF: 6.2

2020-07-15

Advanced Electronic Materials

Abstract:The fully memristive neural network is emerging as a game‐changer in the artificial intelligence competition. Artificial synapses and neurons, as two fundamental elements for hardware neural networks, have been substantially implemented by different devices with memory and threshold switching (TS) behaviors, respectively. However, obtaining controllable memory and TS behaviors in the same memristive material system is still a considerable challenge that holds great potential for realizing compatible artificial neurons and synapses. Here, a heterogeneous bilayer conductive filamentary memristor comprising two different electrolytes with distinct copper ion mobility is reported: Cu/GeTe/Al2O3/Pt, which can demonstrate the governance of switching types. Experimentally, when the thickness of the Al2O3 layer is 3 nm, stable nonvolatile multilevel memory switching (MS) is observed and employed to mimic the synaptic plasticity. With increasing oxide thickness, the switching behavior under the same compliance current alters from MS to volatile TS and is used to emulate the integrate‐and‐fire neuron function. The controllable switching stems from the change in the metal filament morphology within the Al2O3 layer, which is supported by ab initio calculation results. This method enables a new pathway for constructing functionally reconfigurable neuromorphic devices for intelligence neuromorphic systems.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Unique Coexistence of Two Resistive Switching Modes in a Memristor Device Enables Multifunctional Neuromorphic Computing Properties

Ayoub H Jaafar,Salim Khalfan Suroor Al Habsi,Thomas Braben,Craig Venables,Maria Grazia Francesconi,Graeme J Stasiuk,Neil T Kemp

DOI: https://doi.org/10.1021/acsami.4c07820

2024-08-21

Abstract:We report on hybrid memristor devices consisting of germanium dioxide nanoparticles (GeO2 NP) embedded within a poly(methyl methacrylate) (PMMA) thin film. Besides exhibiting forming-free resistive switching and an uncommon "ON" state in pristine conditions, the hybrid (nanocomposite) devices demonstrate a unique form of mixed-mode switching. The observed stopping voltage-dependent switching enables state-of-the-art bifunctional synaptic behavior with short-term (volatile/temporal) and long-term (nonvolatile/nontemporal) modes that are switchable depending on the stopping voltage applied. The short-term memory mode device is demonstrated to further emulate important synaptic functions such as short-term potentiation (STP), short-term depression (STD), paired-pulse facilitation (PPF), post-tetanic potentiation (PTP), spike-voltage-dependent plasticity (SVDP), spike-duration-dependent plasticity (SDDP), and, more importantly, the "learning-forgetting-rehearsal" behavior. The long-term memory mode gives additional long-term potentiation (LTP) and long-term depression (LTD) characteristics for long-term plasticity applications. The work shows a unique coexistence of the two resistive switching modes, providing greater flexibility in device design for future adaptive and reconfigurable neuromorphic computing systems at the hardware level.
A Digital–Analog Integrated Memristor Based on a ZnO NPs/CuO NWs Heterostructure for Neuromorphic Computing

Yaqi Wang,Wenxiao Wang,Chunwei Zhang,Hao Kan,Wenjing Yue,Jinbo Pang,Song Gao,Yang Li

DOI: https://doi.org/10.1021/acsaelm.2c00495

IF: 4.494

2022-06-24

ACS Applied Electronic Materials

Abstract:As an emerging electronic device, a memristor facilitates the realization of neuromorphic computing systems. However, high-performance neuromorphic computing systems require not only robust analog memristors but also digital memristors with complementary functions. Here, a digital–analog integrated memristor based on Al/ZnO NPs/CuO NWs/Cu is proposed and demonstrated. First, the electrical properties of the CuO NWs based device are investigated, which exhibit a write-once-read-many-times (WORM) performance. Then, typical bipolar resistive switching behaviors are realized by spin-coating the ZnO NPs to form an Al/ZnO NPs/CuO NWs/Cu based memristor. Through tuning of the applied voltage, an abrupt-to-gradient transition of conductance is achieved in situ. Several analog behaviors, such as long-term potentiation/depression (LTP/LTD), and paired-pulse facilitation/depression (PPF/PPD) are effectively emulated by applying a series of specified electrical measurements to the memristor, which proves the achievement of a digital–analog integrated memristor. Furthermore, on the basis of the LTD and LTP behaviors of the memristor, neural network simulations for handwritten recognition are implemented. The results reveal high recognition accuracies of up to 93%, which are close to the performances for ideal memristors.

materials science, multidisciplinary,engineering, electrical & electronic
Ferroelectric memristor and its neuromorphic computing applications

Junmei Du,Bai Sun,Chuan Yang,Zelin Cao,Guangdong Zhou,Hongyan Wang,Yuanzheng Chen

DOI: https://doi.org/10.1016/j.mtphys.2024.101607

IF: 11.021

2024-12-04

Materials Today Physics

Abstract:Ferroelectric memristors, characterized by spontaneous polarization ferroelectric materials as a functional layer of memristor, yields unique ferroelectric resistive switching behaviours under a reversal electric field. This device demonstrates notable capability in the stable and precise emulation of synaptic and neuronal functions, analogous to those in the human brain, offering an attractive option for neuromorphic computing. With the development of nanotechnology and nano-ferroelectric materials, the advent of nano-ferroelectric memristors enables their incorporation into dense crossbar arrays, enhancing the density and efficiency of neuromorphic computing. In this review, we offer a comprehensive overview of ferroelectric memristor and its neuromorphic computing applications, including the recent progress, existing challenges and possible solutions, as well as future development direction.

materials science, multidisciplinary,physics, applied
Memristive brain-like computing

Xin-Yu Wen,Ya-Sai Wang,Yu-Hui He,Xiang-Shui Miao,Institute of Information Storage Materials and Devices, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China,Hubei Yangtze Memory Laboratories, Wuhan 430205, China

DOI: https://doi.org/10.7498/aps.71.20220666

IF: 0.906

2022-07-22

Acta Physica Sinica

Abstract:Author(s): Wen Xin-Yu, Wang Ya-Sai, He Yu-Hui, Miao Xiang-Shui With the rapid development of deep learning, the current rapid update and iteration of intelligent algorithms put forward high requirements for hardware computing power. Limited by the exhaustion of Moore's law and the von Neumann bottleneck, the traditional CMOS integration cannot meet the urgent needs of hardware computing power improvement. The utilization of new device memristors to construct a neuromorphic computing system can realize the integration of storage and computing, and has the characteristics of extremely high parallelism and ultra-low power consumption. In this work, the device structure and physical mechanism of mainstream memristors are reviewed in bottom-to-top order firstly, and their performance characteristics are compared and analyzed. Then, the recent research progress of memristors to realize artificial neurons and artificial synapses is introduced, including the simulation of specific circuit forms and neuromorphic functions. Secondly, in this work, the structural forms of passive and active memristive arrays and their applications in neuromorphic computing, including neural network-based handwritten digits and face recognition, are reviewed. Lastly, the current challenges of memristive brain-like computing from the bottom to the top, are summarized and the future development of this field is also prospected. Acta Physica Sinica. 2022 71(14): 140501. Published 2022-07-20

physics, multidisciplinary
Flexible Boron Nitride-Based Memristor Forin Situdigital and Analogue Neuromorphic Computing Applications

Jia-Lin Meng,Tian-Yu Wang,Zhen-Yu He,Lin Chen,Hao Zhu,Li Ji,Qing-Qing Sun,Shi-Jin Ding,Wen-Zhong Bao,Peng Zhou,David Wei Zhang

DOI: https://doi.org/10.1039/d0mh01730b

IF: 13.3

2021-01-01

Materials Horizons

Abstract:The data processing efficiency of traditional computers is suffering from the intrinsic limitation of physically separated processing and memory units. Logic-in-memory and brain-inspired neuromorphic computing are promising in-memory computing paradigms for improving the computing efficiency and avoiding high power consumption caused by extra data movement. However, memristors that can conduct digital memcomputing and neuromorphic computing simultaneously are limited by the difference in the information form between digital data and analogue data. In order to solve this problem, this paper proposes a flexible low-dimensional memristor based on boron nitride (BN), which has ultralow-power non-volatile memory characteristic, reliable digital memcomputing capabilities, and integrated ultrafast neuromorphic computing capabilities in a single in situ computing system. The logic-in-memory basis, including FALSE, material implication (IMP), and NAND, are implemented successfully. The power consumption of the proposed memristor per synaptic event (198 fJ) can be as low as biology (fJ level) and the response time (1 μs) of the neuromorphic computing is four orders of magnitude shorter than that of the human brain (10 ms), paving the way for wearable ultrahigh efficient next-generation in-memory computing architectures.
Dual functionality of NbOx memristors for synaptic and neuronal emulations in advanced neuromorphic systems

Seongmin Kim,Jungang Heo,Sungjun Kim,Min-Hwi Kim

DOI: https://doi.org/10.1039/d4tc03212h

IF: 6.4

2024-10-04

Journal of Materials Chemistry C

Abstract:In this study, we reveal a novel NbO x memristor structure that significantly advances neuromorphic computing by modulating compliance current (CC). This structure emulates the dynamic functionalities of artificial synapses and neurons, addressing the challenge of accurately imitating biological counterparts. Our memristors uniquely exhibit both memory switching (MS) and threshold switching (TS) properties through oxygen content modulation, enabling a single device to undertake diverse synaptic plasticity and neuronal functions. Our findings demonstrate the dual functionality of NbO x -based memristors: acting as TS and neuron-like devices at high CCs, and as MS and synapse-like elements at low CCs. At a higher CC, the device exhibits effective TS behaviors, including favorable threshold and holding voltages, along with efficient wait and recovery times. This has enabled the creation of a restricted Boltzmann machine (RBM) model for reproducing Modified National Institute of Standards and Technology (MNIST) database images and the implementation of the leaky integrate-and-fire (LIF) model, which in turn opens possibilities for utilizing spike neural network (SNN) frameworks. At lower CCs, the memristor displays synaptic characteristics such as short-term and long-term memory, facilitated by retention loss for offline MNIST simulation. The NbO x memristor represents a critical component for the future of neuromorphic devices and capable of performing both neuronal and synaptic functions. It paves the way for sophisticated, integrated computational models, thereby significantly contributing to the neuromorphic engineering field. Through comprehensive structural and functional analyses, this study underscores the potential of NbO x memristors in neuromorphic computing and lays the foundation for future high-performance neuromorphic device advancements.

materials science, multidisciplinary,physics, applied
Optically Modulated Dual‐mode Memristor Arrays Based on Core‐shell CsPbBr3@graphdiyne Nanocrystals for Fully Memristive Neuromorphic Computing Hardware

Fu-Dong Wang,Mei-Xi Yu,Xu-Dong Chen,Jiaqiang Li,Zhi-Cheng Zhang,Yuan Li,Guo-Xin Zhang,Ke Shi,Lei Shi,Min Zhang,Tong-Bu Lu,Jin Zhang

DOI: https://doi.org/10.1002/smm2.1135

2022-01-01

SmartMat

Abstract:Abstract Artificial synapses and neurons are crucial milestones for neuromorphic computing hardware, and memristors with resistive and threshold switching characteristics are regarded as the most promising candidates for the construction of hardware neural networks. However, most of the memristors can only operate in one mode, that is, resistive switching or threshold switching, and distinct memristors are required to construct fully memristive neuromorphic computing hardware, making it more complex for the fabrication and integration of the hardware. Herein, we propose a flexible dual‐mode memristor array based on core–shell CsPbBr3@graphdiyne nanocrystals, which features a 100% transition yield, small cycle‐to‐cycle and device‐to‐device variability, excellent flexibility, and environmental stability. Based on this dual‐mode memristor, homo‐material‐based fully memristive neuromorphic computing hardware—a power‐free artificial nociceptive signal processing system and a spiking neural network—are constructed for the first time. Our dual‐mode memristors greatly simplify the fabrication and integration of fully memristive neuromorphic systems.

A Bifunctional Memristor Enables Multiple Neuromorphic Computing Applications

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

A Brain-Inspired In-Memory Computing System for Neuronal Communication Via Memristive Circuits.

Design and Implementation of a Flexible Neuromorphic Computing System for Affective Communication Via Memristive Circuits

Multitasking Memristor for High Performance and Ultralow Power Artificial Synaptic Device Application

Versatile Cu2ZnSnS4-based synaptic memristor for multi-field-regulated neuromorphic applications

CMOS Back-End Compatible Memristors for in Situ Digital and Neuromorphic Computing Applications.

Reconfigurable Ag/HfO2/NiO/Pt Memristors with Stable Synchronous Synaptic and Neuronal Functions for Renewable Homogeneous Neuromorphic Computing System

Versatile NbOx‐Based Volatile Memristor for Artificial Intelligent Applications

Diverse long-term potentiation and depression based on multilevel LiSiOx memristor for neuromorphic computing

Reconfigurable Ag/HfO 2 /NiO/Pt Memristors with Stable Synchronous Synaptic and Neuronal Functions for Renewable Homogeneous Neuromorphic Computing System

Self-rectifying-based Memristors for Neuromorphic Computing.

Diverse Long-Term Potentiation and Depression Based on Multilevel LiSiOxmemristor for Neuromorphic Computing.

Controlled Memory and Threshold Switching Behaviors in a Heterogeneous Memristor for Neuromorphic Computing

Unique Coexistence of Two Resistive Switching Modes in a Memristor Device Enables Multifunctional Neuromorphic Computing Properties

A Digital–Analog Integrated Memristor Based on a ZnO NPs/CuO NWs Heterostructure for Neuromorphic Computing

Ferroelectric memristor and its neuromorphic computing applications

Memristive brain-like computing

Flexible Boron Nitride-Based Memristor Forin Situdigital and Analogue Neuromorphic Computing Applications

Dual functionality of NbOx memristors for synaptic and neuronal emulations in advanced neuromorphic systems

Optically Modulated Dual‐mode Memristor Arrays Based on Core‐shell CsPbBr3@graphdiyne Nanocrystals for Fully Memristive Neuromorphic Computing Hardware