Photoresponse in sequentially stacked antimony selenide thin films

Rohini Anandan,Piraviperumal Malar

DOI: https://doi.org/10.1088/2053-1591/ad4308

IF: 2.025

2024-04-25

Materials Research Express

Abstract:Antimony selenide (Sb2Se3), a binary semiconducting compound has widespread research attention due to its excellent optoelectronic properties in the visible region and usefulness in applications such as solar cells, photosensors and photoelectrodes. The presented study explores the thickness dependent photoresponse in Sb2Se3 thin films, prepared by reactive selenization of antimony films having thickness values of ⁓900 nm and ⁓1800 nm when stacked second time. Growth orientation along [001] direction was achieved through carefully optimized selenization conditions to enable favourable charge transport in anisotropic Sb2Se3. Predominant Sb2Se3 formation was inferred from X-ray diffraction, Raman spectroscopy, secondary electron microscopy and energy-dispersive X-ray analyses. High optical absorption coefficient values of about 1× 105 cm-1 and 5.7× 104 cm-1 were observed for ⁓900 nm and ⁓1800 nm thick Sb2Se3 thin films. Further, the optoelectronic properties were elucidated through current-voltage and transient photoresponse measurements under dark and illumination conditions. The measurements were done under zero and different bias voltages. Sb2Se3 films having⁓ 900 nm thickness exhibited self-driven photoresponse with a responsivity of 4.3×10-8 A/W and detectivity of 3.5×106 jones respectively, under AM 1.5 G illumination conditions. Keywords: Sb2Se3 thin films, selenization, photoresponse

materials science, multidisciplinary