Abstract:Stochastic neurons are efficient hardware accelerators for solving a large variety of combinatorial optimization problems. "Binary" stochastic neurons (BSN) are those whose states fluctuate randomly between two levels +1 and -1, with the probability of being in either level determined by an external bias. "Analog" stochastic neurons (ASNs), in contrast, can assume any state between the two levels randomly (hence "analog") and can perform analog signal processing. They may be leveraged for such tasks as temporal sequence learning, processing and prediction. Both BSNs and ASNs can be used to build efficient and scalable neural networks. Both can be implemented with low (potential energy) barrier nanomagnets (LBMs) whose random magnetization orientations encode the binary or analog state variables. The difference between them is that the potential energy barrier in a BSN LBM, albeit low, is much higher than that in an ASN LBM. As a result, a BSN LBM has a clear double well potential profile, which makes its magnetization orientation assume one of two orientations at any time, resulting in the binary behavior. ASN nanomagnets, on the other hand, hardly have any energy barrier at all and hence lack the double well feature. That makes their magnetizations fluctuate in an analog fashion. Hence, one can reconfigure an ASN to a BSN, and vice-versa, by simply raising and lowering the energy barrier. If the LBM is magnetostrictive, then this can be done with local (electrically generated) strain. Such a reconfiguration capability heralds a powerful field programmable architecture for a p-computer, and the energy cost for this type of reconfiguration is miniscule.

Reconfigurable Stochastic neurons based on tin oxide/MoS2 hetero-memristors for simulated annealing and the Boltzmann machine

Tunable Stochastic Memristive Device for Simulated Annealing in Boltzmann Machine Designed by a Machine Learning Method

Machine Learning Approach for Device-Circuit Co-Optimization of Stochastic-Memristive-Device-Based Boltzmann Machine

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

Stochastic Learning in Oxide Binary Synaptic Device for Neuromorphic Computing.

Microscopic Modeling and Optimization of NbOx Mott Memristor for Artificial Neuron Applications

Mott memristor based stochastic neurons for probabilistic computing

Memristors with Tunable Volatility for Reconfigurable Neuromorphic Computing

Reconfigurable Stochastic Neurons Based on Strain Engineered Low Barrier Nanomagnets

Configurable Synaptic and Stochastic Neuronal Functions in ZnTe-Based Memristor for an RBM Neural Network

Tolerance of Intrinsic Device Variation in Fuzzy Restricted Boltzmann Machine Network Based on Memristive Nano-Synapses

The stochastic modeling of TiO2 memristor and its usage in neuromorphic system design

An atomic Boltzmann machine capable of on-chip learning

CMOS + stochastic nanomagnets: heterogeneous computers for probabilistic inference and learning

Leveraging Stochastic Memristor Devices in Neuromorphic Hardware Systems.

Stochastic neuro-fuzzy system implemented in memristor crossbar arrays

Transiently chaotic simulated annealing based on intrinsic nonlinearity of memristors for efficient solution of optimization problems.

Stochastic Neuron Based on IGZO Schottky Diodes for Neuromorphic Computing

Reconfigurable Ag/HfO 2 /NiO/Pt Memristors with Stable Synchronous Synaptic and Neuronal Functions for Renewable Homogeneous Neuromorphic Computing System

Reconfigurable Ag/HfO2/NiO/Pt Memristors with Stable Synchronous Synaptic and Neuronal Functions for Renewable Homogeneous Neuromorphic Computing System