Abstract:Poor electrical conductivity, a crucial issue in applying manganese oxides as electronic materials, has been mentioned in nearly all related research work. A universal optimization scheme for intrinsic conductivity is lacking among solutions. In this study, boron with a strong Lewis acidity was selected as a doping source to modulate the electronic structure of manganese oxide. Boron, a commonly-used p-type doping element, has an unclear doping mechanism for transition metal oxides. Based on the first principles, all doping possibilities were investigated, finding boron atoms can most easily enter the lattice interstice. Importantly, after boron atom doping, the material generates a density of state at the Fermi level, resulting in the overlap of the valence and conduction band, forming a partial occupation band. The material changes from semiconductor properties to metallic properties and the electrical conductivity is significantly optimized. To verify the scheme feasibility, boron-doped Mn3O4 was synthesized through the hydrothermal and the charge transfer resistance of sample Mn-B-4 is 46 % lower than that of undoped Mn3O4 electrodes. Further exploration of boron doping effects was conducted by using supercapacitor tests which are strongly influenced by conductivity. Mn-B-4 exhibited better rate performance and cyclic stability as a supercapacitor electrode. The positive effects of boron doping on the electrical conductivity of manganese oxides were demonstrated through both theoretical calculations and experiments. This study will provide a general solution reference for large-scale modification and application of manganese oxide and would contribute to the promotion of the related electronic materials field.

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Pressure-induced Superconductivity at 32 K in MoB2

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